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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRL3705NS MOSFET N-CH 55V 89A D2PAK Infineon Technologies	8,163	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	89A (Tc)	4V, 10V	10mOhm @ 46A, 10V	2V @ 250µA	98 nC @ 5 V	±16V	3600 pF @ 25 V	-	3.8W (Ta), 170W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
94-2386 MOSFET N-CH 55V 49A D2PAK Infineon Technologies	5,580	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	49A (Tc)	10V	17.5mOhm @ 25A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1470 pF @ 25 V	-	3.8W (Ta), 94W (Tc)	-55°C ~ 155°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRFZ44NL MOSFET N-CH 55V 49A TO262 Infineon Technologies	9,859	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	49A (Tc)	10V	17.5mOhm @ 25A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1470 pF @ 25 V	-	3.8W (Ta), 94W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRLZ44NL MOSFET N-CH 55V 47A TO262 Infineon Technologies	6,555	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	47A (Tc)	4V, 10V	22mOhm @ 25A, 10V	2V @ 250µA	48 nC @ 5 V	±16V	1700 pF @ 25 V	-	3.8W (Ta), 110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
SPD04N50C3T MOSFET N-CH 560V 4.5A DPAK Infineon Technologies	9,201	RFQ	Datasheet	*	-	Cut Tape (CT)	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSB014N04LX3GXUMA1 MOSFET N-CH 40V 36A/180A 2WDSON Infineon Technologies	8,337	RFQ	Datasheet	OptiMOS™	3-WDSON	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	36A (Ta), 180A (Tc)	4.5V, 10V	1.4mOhm @ 30A, 10V	2V @ 250µA	196 nC @ 10 V	±20V	16900 pF @ 20 V	-	2.8W (Ta), 89W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	MG-WDSON-2, CanPAK M™
BSP149H6906XTSA1 MOSFET N-CH 200V 660MA SOT223-4 Infineon Technologies	8,718	RFQ	Datasheet	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	200 V	660mA (Ta)	0V, 10V	1.8Ohm @ 660mA, 10V	1V @ 400µA	14 nC @ 5 V	±20V	430 pF @ 25 V	-	1.8W (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-SOT223-4
IRFH5302TR2PBF MOSFET N-CH 30V 32A 5X6 PQFN Infineon Technologies	5,639	RFQ	Datasheet	-	8-PowerVDFN	Cut Tape (CT)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	32A (Ta), 100A (Tc)	-	2.1mOhm @ 50A, 10V	2.35V @ 100µA	76 nC @ 10 V	-	4400 pF @ 15 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PQFN (5x6) Single Die
IRF7832Z MOSFET N-CH 30V 21A 8SO Infineon Technologies	3,457	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	21A (Ta)	4.5V, 10V	3.8mOhm @ 20A, 10V	2.35V @ 250µA	45 nC @ 4.5 V	±20V	3860 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
IRF1010ESTRR MOSFET N-CH 60V 84A D2PAK Infineon Technologies	9,861	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	84A (Tc)	10V	12mOhm @ 50A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	3210 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK

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