Infineon Technologies IRFH5302TR2PBF

Overview

IRFH5302TR2PBF from Infineon Technologies is a 30 V, 175 A (T_C(Bottom) = 25°C) N-channel Trench MOSFET in PQFN 5 mm × 6 mm package, optimized for high-current synchronous buck converters and OR-ing applications with R_DS(on) = 1.8 mΩ (typ), Q_g = 29 nC (typ), and R_θJC(Bottom) = 1.2 °C/W.

For engineers reviewing the IRFH5302TR2PBF datasheet, IRFH5302TR2PBF pinout, IRFH5302TR2PBF application, or IRFH5302TR2PBF equivalent, key selection factors include low-conduction-loss operation at 12 V bus systems, thermal performance under PCB-mounted high-power conditions, gate charge-driven switching efficiency, and compatibility with standard surface-mount assembly processes.

Technical Context

This device uses Infineon's HEXFET® Trench technology to achieve ultra-low R_DS(on) and high current density in a thermally enhanced PQFN package. Its gate threshold voltage (V_GS(th) = 1.35–2.35 V) supports 4.5 V logic-level drive, while low Q_gd (9.7 nC) and fast switching times (t_r = 51 ns, t_f = 18 ns) enable high-frequency DC-DC conversion.

The integrated body diode exhibits V_SD = 1.0 V (at 50 A, T_J = 25°C) and t_rr = 20–30 ns, supporting efficient synchronous rectification and unclamped inductive switching with E_AS = 130 mJ. Thermal resistance to PCB (R_θJC(Bottom)) is specified at ≤1.2 °C/W, enabling direct heat transfer to copper planes.

Key Specifications

Pinout & Package

PQFN 5 mm × 6 mm (Outline "B") package with exposed thermal pad on bottom side; industry-standard 8-pin layout optimized for PCB thermal conduction and automated placement.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 30 V N-channel MOSFET applications.

Compared with SiR872DP and CSD18540Q5B, IRFH5302TR2PBF delivers the lowest R_θJC and best thermal headroom for sustained 100+ A operation on cost-sensitive industrial PCBs, while maintaining competitive Q_g and R_DS(on).

Availability

IRFH5302TR2PBF is available at Aetrix Electronics and suitable for high-current OR-ing, synchronous buck converter, battery-powered motor inverter, and in-rush current limiting applications requiring stable component supply and long-term industrial availability.

Supply support for IRFH5302TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-current DC-DC conversion and power distribution in industrial, computing, and telecom infrastructure.

FAQ

What is the maximum continuous drain current for IRFH5302TR2PBF at 100°C case temperature?

The maximum continuous drain current is 111 A when the bottom-case temperature (T_C(Bottom)) is maintained at 100°C, per the Absolute Maximum Ratings table. This value reflects derating due to thermal resistance and junction temperature limits (T_J ≤ 150°C), and assumes proper PCB copper area and thermal via implementation.

Is IRFH5302TR2PBF suitable for linear-mode operation during in-rush limiting?

Yes - its SOA curve (Fig. 8) supports linear-mode operation up to 175 A at V_DS ≤ 3 V for short durations (<10 ms), and its 100% R_g testing ensures consistent gate control during analog biasing. Thermal design must account for transient power dissipation using Z_θJC(t) curves (Fig. 11).

Does the PQFN 5×6 package require special stencil or solder paste recommendations?

Yes - Infineon recommends a 0.12 mm thick stencil with 80% area ratio openings for the thermal pad, per AN-1136. The exposed pad must be fully soldered to a minimum 10 mm² copper area with ≥9 thermal vias (0.3 mm diameter, 0.8 mm pitch) to achieve rated R_θJC and prevent voiding-related thermal degradation.

How does the body diode performance compare to external Schottky diodes in synchronous rectification?

The integrated body diode has V_SD = 1.0 V at 50 A and t_rr = 20–30 ns, outperforming typical 30 V Schottky diodes (V_F ≈ 0.45 V but t_rr undefined) in reverse recovery robustness. While forward drop is higher, its controlled recovery eliminates hard-switching spikes and enables reliable synchronous operation without snubbers in buck converters.