Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1010ESTRR

Name: IRF1010ESTRR
Brand: Infineon Technologies
SKU: IRF1010ESTRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF1010ESTRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF1010ESTRR.pdf

Description:: MOSFET N-CH 60V 84A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,861

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF1010ESTRR from Infineon Technologies (formerly International Rectifier) is a 60V, 84A N-channel D2Pak surface-mount HEXFET® Power MOSFET with 12mΩ R_DS(on) at V_GS = 10V, fully avalanche-rated, and optimized for high-current DC-DC converters, motor drives, and UPS systems requiring fast switching and rugged thermal performance.

For engineers reviewing the IRF1010ESTRR datasheet, IRF1010ESTRR pinout, IRF1010ESTRR application, or IRF1010ESTRR equivalent, key selection criteria include its 175°C max junction temperature, 130nC total gate charge, 73ns typical reverse recovery time, low 0.75°C/W junction-to-case thermal resistance, and D2Pak package suitability for high-power PCB mount designs.

Technical Context

This MOSFET employs advanced planar HEXFET processing to minimize on-resistance per die area while maintaining robust avalanche energy handling (E_AS = 1180mJ). Its body diode exhibits 1.3V forward voltage at 50A and 25°C, with 220–330nC reverse recovery charge under standardized di/dt conditions.

The device operates with a gate threshold voltage of 2.0–4.0V and delivers 69S transconductance at V_DS = 25V, ID = 50A. Its capacitance profile (C_iss = 3210pF, C_oss = 690pF, C_rss = 140pF at V_DS = 25V) supports efficient hard-switching in high-frequency power stages up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in buck, half-bridge, and synchronous rectifier topologies.
R_DS(on)	12mΩ @ V_GS = 10V, I_D = 50A - Directly determines conduction loss (P_cond ≈ I² × R_DS(on)) in high-current paths.
I_D (T_C = 25°C)	84A - Continuous drain current rating under ideal heatsinking; limited by package thermal resistance (0.75°C/W) and silicon capability.
Q_g	130nC - Total gate charge required for full turn-on; impacts driver sizing and switching loss (E_sw ∝ Q_g × V_GS).
E_AS	1180mJ - Single-pulse avalanche energy rating; enables reliable operation during inductive load switching transients without external snubbers.
T_J max	+175°C - Maximum allowable junction temperature; defines safe operating area boundary and thermal derating slope (1.4W/°C).

Pinout & Package

The IRF1010ESTRR uses the D2Pak (TO-263) surface-mount package: a 3-pin, single-die power package with exposed drain pad for low-inductance, high-current PCB mounting and enhanced thermal transfer to copper planes.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; requires ≥10V drive for full enhancement; gate leakage <100nA at ±20V ensures low standby power.
Pin 2 (D)	Drain	Main high-side power terminal; internally connected to exposed metal tab; must be soldered to large copper pour for thermal and current handling.
Pin 3 (S)	Source	Power return path and reference for gate drive; internal source inductance (L_S) affects switching waveform integrity.

Key Features

Feature	Design Value
Fully avalanche rated	Withstands 1180mJ single-pulse avalanche energy without failure-enables robustness in inductive switching without clamping circuits.
Low R_DS(on) / area	12mΩ at 60V rating-reduces conduction losses by >30% vs. legacy 60V MOSFETs of comparable package size.
Fast body diode	73ns typical reverse recovery time and 220nC Q_rr-minimizes commutation loss and EMI in synchronous rectification and freewheeling applications.
D2Pak thermal performance	0.75°C/W R_θJC-supports >100W continuous dissipation with minimal heatsink when mounted on 1"² FR-4 PCB.

Applications

DC-DC Converters

Motor Drives

Use Scenario: High-efficiency 12V–48V input, 3.3V/5V/12V output buck converters in telecom and server PSUs.

IC Role / Device Role / Timing Role: Primary high-side switch in synchronous buck topology; switched at 200–500kHz with precise dead-time control.

Use Value: Low 12mΩ R_DS(on) and 130nC Q_g enable >95% efficiency at 50A load while minimizing gate driver power and thermal footprint.

Use Scenario: 3-phase inverter stage for 1–3kW BLDC or PMSM motors in industrial automation and e-mobility subsystems.

IC Role / Device Role / Timing Role: Low-side switching element in 6-pack inverter module; handles pulsed currents up to 330A with controlled dv/dt.

Use Value: 175°C T_J rating and 1.4W/°C derating allow sustained operation under high ambient temperatures and intermittent overload.

Uninterruptible Power Supplies

Industrial Power Supplies

Use Scenario: Bidirectional battery interface and inverter stage in line-interactive and online UPS systems (1–5kVA).

IC Role / Device Role / Timing Role: Synchronous rectifier and inverter switch; subjected to repetitive avalanche stress during battery discharge and grid reconnection.

Use Value: 1180mJ E_AS and 50A I_AR ensure reliable operation across thousands of charge/discharge cycles without degradation.

Use Scenario: High-current auxiliary power rails (±15V, +24V, +48V) in programmable logic controllers and industrial HMIs.

IC Role / Device Role / Timing Role: Hot-swap FET and overcurrent protection switch; operated in linear mode during inrush limiting.

Use Value: 84A continuous rating and 0.75°C/W R_θJC support stable linear-mode operation with minimal thermal runaway risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N6F6	R_DS(on) = 10.5mΩ, Q_g = 115nC, TO-220 package	Through-hole mounting only; higher R_θJA (62°C/W) limits PCB-only cooling	Preferred where mechanical robustness and manual assembly outweigh surface-mount density requirements.
IXTP110N065T	R_DS(on) = 6.5mΩ, Q_g = 145nC, TO-220 package, 65V rating	Lower R_DS(on) but higher gate charge; not D2Pak-compatible	Selected when lower conduction loss dominates over switching loss and thermal constraints permit larger heatsink.

Compared with STP110N6F6 and IXTP110N065T, the IRF1010ESTRR offers optimal balance of surface-mount thermal performance (0.75°C/W), proven avalanche ruggedness, and industry-standard D2Pak footprint-making it preferred for space-constrained, high-reliability power stages where PCB copper acts as primary heatsink.

Availability

IRF1010ESTRR is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, uninterruptible power supplies, and industrial power supplies requiring stable component supply and long-term production continuity.

Supply support for IRF1010ESTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep heritage in power MOSFET innovation through its acquisition of International Rectifier.

The HEXFET® product line was engineered specifically for high-efficiency, high-reliability power conversion-targeting applications demanding low R_DS(on), fast switching, and intrinsic avalanche tolerance without external protection.

FAQ

What is the maximum continuous drain current for IRF1010ESTRR at 100°C case temperature?

The maximum continuous drain current is 59A at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced heat dissipation capacity at elevated case temperatures, with linear derating beginning at 200W (T_C = 25°C) and decreasing by 1.4W/°C above that point.

Does IRF1010ESTRR have a built-in body diode, and what are its key parameters?

Yes, it integrates a monolithic p-n junction body diode with V_SD = 1.3V at I_S = 50A and T_J = 25°C, t_rr = 73ns typical, and Q_rr = 220–330nC. These values are measured under standardized conditions (di/dt = 100A/µs, I_F = 50A), making it suitable for synchronous rectification and freewheeling in hard-switched topologies.

Can IRF1010ESTRR be used in linear (ohmic) mode for hot-swap or inrush current limiting?

Yes-its 175°C maximum junction temperature, 200W power dissipation rating at T_C = 25°C, and SOA curve (Fig. 8) support short-duration linear operation. However, safe operation requires strict thermal monitoring and current limiting, as R_DS(on) increases with temperature and power dissipation becomes highly localized at the die edge.

What is the gate threshold voltage range, and how does it affect drive circuit design?

V_GS(th) is specified from 2.0V to 4.0V at I_D = 250µA. This wide range means gate drive must exceed 10V to ensure full enhancement and low R_DS(on); using only 5V logic-level drive results in significantly higher on-resistance (>50mΩ) and unacceptable conduction loss in high-current applications.

IRF1010ESTRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 84A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3210 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF1010ESTRR FAQ

1.How can I place an order for IRF1010ESTRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1010ESTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1010ESTRR reliable?

The price and inventory of IRF1010ESTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1010ESTRR is usually 5 days.

3.What payment methods are accepted for IRF1010ESTRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1010ESTRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1010ESTRR?

IRF1010ESTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1010ESTRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1010ESTRR?

For technical support, including IRF1010ESTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1010ESTRR requirements.

6.How does Aetrix verify that IRF1010ESTRR is sourced from the original manufacturer or authorized distributors?

All IRF1010ESTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1010ESTRR meets industry standards.

7.What is the process for return or replacement of IRF1010ESTRR?

All IRF1010ESTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF1010ESTRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1010ESTRR part is unused and in its original packaging.

Return procedure for IRF1010ESTRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…