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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFZ44NL

Name: IRFZ44NL
Brand: Infineon Technologies
SKU: IRFZ44NL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ44NL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRFZ44NL.pdf

Description:: MOSFET N-CH 55V 49A TO262

Quantity:: RFQ Add To RFQ list

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Inventory:9,859

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Product details

Overview

IRFZ44NL from Infineon Technologies is a 55 V, 49 A N-channel enhancement-mode MOSFET in TO-262 (D-Pak) package, optimized for high-current switching in DC-DC converters and motor drives with R_DS(on) = 17.5 mΩ at V_GS = 10 V and T_J = 25°C. It integrates a fast-recovery body diode (t_rr = 63–95 ns) and supports repetitive avalanche energy up to 9.4 mJ.

For engineers reviewing the IRFZ44NL datasheet, IRFZ44NL pinout, IRFZ44NL application, or IRFZ44NL equivalent, key selection criteria include its 17.5 mΩ on-resistance at 10 V gate drive, 160 A pulsed drain current capability, 55 V V_(BR)DSS, thermal resistance R_θJC = 1.5 °C/W, and suitability for hard-switched industrial power stages requiring robust SOA and avalanche ruggedness.

Technical Context

This MOSFET employs planar vertical DMOS technology with optimized cell pitch and trench-free gate structure to balance conduction loss and switching speed. Its gate charge profile (Q_g = 63 nC, Q_gd = 23 nC) enables efficient operation in 20–100 kHz hard-switching topologies while maintaining low Miller-induced shoot-through risk.

The integrated body diode features controlled reverse recovery (Q_rr = 170–260 nC, dv/dt rating = 5.0 V/ns), enabling reliable freewheeling in synchronous rectification and H-bridge motor control without external snubbers under typical 25 A load conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	55 V - Maximum blocking voltage before avalanche onset; defines usable bus voltage headroom in 48 V systems.
R_DS(on)	17.5 mΩ @ V_GS = 10 V, I_D = 25 A - Directly determines I²R conduction loss in continuous high-current paths.
I_D (T_C = 25°C)	49 A - Continuous safe operating current at case temperature 25°C; sets heatsink sizing baseline.
Q_g	63 nC - Total gate charge required for full turn-on; governs driver power and switching loss trade-off.
t_rr	63–95 ns - Body diode reverse recovery time; critical for EMI and cross-conduction margin in bridge circuits.
E_AS	530 mJ - Single-pulse avalanche energy rating; validates robustness against inductive switching transients.
R_θJC	1.5 °C/W - Junction-to-case thermal resistance; enables direct calculation of die temperature rise under known case temp.

Pinout & Package

IRFZ44NL uses the TO-262 (D-Pak) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard S-D-G order (Source–Drain–Gate) when viewed from top with marking side up and leads pointing downward.

Pin/Terminal	Circuit Role	Design Meaning
Source (S)	Reference node for gate drive and current return path	Connected to power ground or low-side switch node; carries full load current and must be routed with low inductance.
Drain (D)	Main high-side current output terminal	Internally tied to exposed copper pad; requires thermal via array to inner ground plane for heat dissipation.
Gate (G)	Control input for channel modulation	High-impedance CMOS-compatible input; sensitive to ringing-requires local RC snubber or gate resistor (12 Ω typical).

Key Features

Feature	Design Value
Low R_DS(on) with 10 V drive	17.5 mΩ enables <1 W conduction loss at 40 A, reducing heatsink requirements in compact 48 V power supplies.
Enhanced avalanche ruggedness	530 mJ single-pulse and 9.4 mJ repetitive avalanche ratings support reliable operation during inductive load switching faults.
Fast body diode recovery	63 ns typical t_rr and 5.0 V/ns dv/dt rating minimize voltage overshoot and EMI in freewheeling phases.
Thermally optimized D-Pak	1.5 °C/W R_θJC allows >90 W power dissipation with moderate heatsinking-ideal for board-level thermal management.

Applications

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: 48 V input, 12 V/20 A output synchronous buck regulator in telecom power shelf.

IC Role / Device Role / Timing Role: High-side main switch handling 20 A continuous current with 100 kHz PWM switching.

Use Value: 17.5 mΩ R_DS(on) limits conduction loss to 7 W, enabling natural convection cooling without fan.

Use Scenario: Full-bridge drive for 24 V, 30 A brushed motor in automated gate actuator.

IC Role / Device Role / Timing Role: Low-side switching element in H-bridge with bidirectional current and regenerative braking.

Use Value: Fast 63 ns body diode recovery prevents shoot-through during direction reversal and reduces snubber losses.

UPS Inverter Stage

Industrial Solenoid Controller

Use Scenario: Half-bridge inverter output stage converting 350 V DC bus to 230 V AC for offline UPS backup.

IC Role / Device Role / Timing Role: Switching device in hard-switched topology operating at 16 kHz with 50% duty cycle.

Use Value: 55 V V_(BR)DSS provides 20% margin over 48 V rail, while 160 A pulsed rating handles surge currents during load step.

Use Scenario: High-energy solenoid activation circuit in hydraulic valve manifold with 100 ms pulse duration.

IC Role / Device Role / Timing Role: Low-side switch controlling 40 A peak current through 15 mH inductive load.

Use Value: 530 mJ E_AS rating safely clamps inductive kickback without external TVS, simplifying BOM.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	R_DS(on) = 14 mΩ @ 10 V but V_(BR)DSS = 60 V; higher Q_g = 85 nC	Better conduction loss at same current, but slower switching increases loss above 50 kHz	Prefer for low-frequency, high-current linear regulation where efficiency > switching speed
FQP30N06L	R_DS(on) = 20 mΩ @ 10 V; lower I_D = 30 A; R_θJC = 2.5 °C/W	Lower thermal performance and current rating limit use in sustained 40 A loads	Acceptable for cost-sensitive, lower-power (<60 W) motor control with derated ambient

Compared with STP55NF06L and FQP30N06L, the IRFZ44NL delivers optimal balance of on-resistance (17.5 mΩ), thermal resistance (1.5 °C/W), and avalanche energy (530 mJ), making it preferred for 48 V industrial switching where reliability under transient stress is prioritized over marginal R_DS(on) reduction.

Availability

IRFZ44NL is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drivers, UPS inverters, and industrial solenoid controllers requiring stable component supply across multi-year production cycles.

Supply support for IRFZ44NL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRFZ44NL belongs to Infineon's legacy HEXFET® power MOSFET product line, engineered for high-current, medium-voltage switching in industrial power conversion and motor control applications.

FAQ

Is IRFZ44NL suitable for 12 V automotive battery applications?

No-its 55 V V_(BR)DSS rating is insufficient for automotive load-dump transients (up to 120 V). It is rated for 48 V nominal systems only. For 12 V automotive use, a 100 V+ MOSFET such as IPP040N10N5 is required to meet ISO 7637-2 pulse test compliance.

What is the maximum recommended gate resistor value for reliable switching?

A 12 Ω gate resistor is specified in the datasheet for turn-off delay (t_d(off)) and fall time (t_f) characterization. Values above 22 Ω increase switching losses and risk incomplete turn-off due to Miller plateau effects; below 5 Ω may cause gate ringing and overshoot exceeding ±20 V absolute maximum rating.

Can IRFZ44NL replace IRFZ44N in existing PCB layouts?

Yes-IRFZ44NL is a lead-free, RoHS-compliant drop-in replacement for IRFZ44N with identical pinout, package (TO-262), and electrical specifications. The "L" suffix denotes lead-free finish and does not affect thermal or electrical performance under standard operating conditions.

Does IRFZ44NL require a heatsink in 40 A continuous operation?

Yes-under 40 A continuous current at 25°C ambient, junction temperature exceeds 175°C without heatsinking. With R_θJC = 1.5 °C/W and R_θCA ≈ 40 °C/W, a minimum 15 cm² aluminum heatsink (0.5 mm thick) is required to maintain T_J ≤ 125°C at full load.

IRFZ44NL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 49A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 17.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1470 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRFZ44NL FAQ

1.How can I place an order for IRFZ44NL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ44NL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ44NL reliable?

The price and inventory of IRFZ44NL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ44NL is usually 5 days.

3.What payment methods are accepted for IRFZ44NL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ44NL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ44NL?

IRFZ44NL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ44NL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ44NL?

For technical support, including IRFZ44NL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ44NL requirements.

6.How does Aetrix verify that IRFZ44NL is sourced from the original manufacturer or authorized distributors?

All IRFZ44NL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ44NL meets industry standards.

7.What is the process for return or replacement of IRFZ44NL?

All IRFZ44NL units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ44NL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ44NL part is unused and in its original packaging.

Return procedure for IRFZ44NL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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