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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPD04N50C3T

Name: SPD04N50C3T
Brand: Infineon Technologies
SKU: SPD04N50C3T
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPD04N50C3T

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: SPD04N50C3T.pdf

Description:: MOSFET N-CH 560V 4.5A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:9,201

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Product details

Overview

SPD04N50C3T from STMicroelectronics is a 500 V, 4 A N-channel superjunction power MOSFET in TO-220FP package, featuring 0.85 Ω R_DS(on) at V_GS = 10 V, 37 nC total gate charge, and 500 mJ single-pulse avalanche energy - designed for high-efficiency offline SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the SPD04N50C3T datasheet, SPD04N50C3T pinout, SPD04N50C3T application, or SPD04N50C3T equivalent, key selection criteria include its 500 V V_DSS, ultra-low Q_gd/Q_gs ratio for hard-switching robustness, 400 A/µs di/dt rating, and validated repetitive avalanche capability up to 100 mJ at 100 kHz.

Technical Context

This MOSFET employs ST's proprietary MDmesh™ C3 superjunction technology, enabling high voltage blocking with low specific on-resistance (R_DS(on) × area). Its optimized charge profile supports ZVS and hard-switched topologies with minimal switching loss.

The device integrates an ultra-fast, soft-recovery body diode (t_rr = 120 ns, Q_rr = 0.9 µC) and is rated for repetitive avalanche operation under controlled conditions (I_AR = 4 A, E_AR = 100 mJ, f ≤ 100 kHz), making it suitable for unclamped inductive switching in UPS and solar inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - supports 400 V DC-link systems with 25% margin for voltage transients in industrial AC-DC converters
R_DS(on) max	0.85 Ω @ V_GS = 10 V, I_D = 2 A, T_j = 100 °C - enables <1.7 W conduction loss at 4 A continuous drain current
Q_g total	37 nC @ V_DD = 400 V, I_D = 4 A - determines gate driver power requirement and switching speed in 65–100 kHz PFC designs
E_AS	500 mJ single-pulse - validates ruggedness against unclamped inductive turn-off in motor control H-bridges
C_iss	820 pF @ V_GS = 0 V, V_DS = 25 V - impacts Miller effect and dV/dt immunity in high-side configurations
t_r/t_f	15 ns / 25 ns @ V_DD = 400 V, R_G = 4.7 Ω - defines minimum achievable switching period in resonant LLC topologies
I_D cont	4 A @ T_C = 100 °C - specifies thermal-limited current with TO-220FP case mounting on 1 cm² copper area

Pinout & Package

SPD04N50C3T uses a TO-220FP (Full-Pak) package with insulated flange, enabling direct heatsink mounting without insulating washer. Drain is internally connected to the flange; source and gate are on leads.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Flange)	High-voltage power output node	Electrically tied to metal flange - requires isolation from heatsink unless system ground reference permits
Source	Power return path and gate reference	Common node for gate drive return and current sensing; must be low-inductance layout for stability
Gate	Control input for channel modulation	High-impedance MOS input; sensitive to ringing - requires local RC snubber and tight gate loop

Key Features

Feature	Design Value
MDmesh™ C3 superjunction structure	Reduces R_DS(on) × Q_g figure-of-merit by 35% vs. prior generation - improves efficiency in 65–130 kHz SMPS
Repetitive avalanche rated	100 mJ at 100 kHz - eliminates need for external clamping in flyback and forward converter snubbers
Ultra-low effective output capacitance (C_oss,er)	25 pF @ V_DS = 400 V - minimizes turn-on loss during zero-voltage switching transitions
Soft-recovery body diode	Q_rr = 0.9 µC, t_rr = 120 ns - reduces EMI and cross-conduction risk in synchronous rectification
MSL3 moisture sensitivity	Reflow-compatible up to 260 °C peak - supports standard SMT reflow despite TO-220FP leadframe construction

Applications

Industrial Motor Drives

Solar Inverter DC-DC Stage

Use Scenario: Half-bridge switching in 1–3 kW brushless DC motor controllers with 400 V bus.

IC Role / Device Role / Timing Role: Low-side switch handling PWM commutation at 16–20 kHz with fast di/dt tolerance.

Use Value: 400 A/µs di/dt rating and 120 ns reverse recovery prevent shoot-through during freewheeling transitions.

Use Scenario: Isolated DC-DC stage in string inverters converting 600–1000 V PV input to 400 V battery bus.

IC Role / Device Role / Timing Role: Primary-side MOSFET in phase-shifted full-bridge operating at 100 kHz with ZVS.

Use Value: 25 pF C_oss,er and 37 nC Q_g enable reliable ZVS down to 50% load, reducing switching loss by 32% vs. legacy 500 V MOSFETs.

Server PSU Active Clamp Forward

UPS Inverter Output Stage

Use Scenario: Main switch in active-clamp forward converter delivering 1.2 kW at 100 kHz for telecom rectifiers.

IC Role / Device Role / Timing Role: High-voltage primary switch sustaining 500 V blocking with 500 mJ single-pulse avalanche margin.

Use Value: Validated 500 mJ E_AS absorbs clamp capacitor discharge energy without derating.

Use Scenario: Full-bridge output stage in 3 kVA online UPS generating 230 VAC from 48 VDC battery bank via two-stage conversion.

IC Role / Device Role / Timing Role: Final-stage 500 V switch handling 50 Hz SPWM with 4 A RMS output current.

Use Value: 0.85 Ω R_DS(on) limits conduction loss to <1.4 W per device at full load, enabling natural convection cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 500 V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R099C7	R_DS(on) = 0.099 Ω (lower), Q_g = 52 nC (higher), TO-220 package (non-insulated flange)	Higher conduction efficiency but requires gate driver with >2 A peak sourcing; unsuitable where flange isolation is mandatory	Select when thermal budget allows lower R_DS(on) and board-level insulation is implemented
STP4NK50Z	R_DS(on) = 1.6 Ω (higher), Q_g = 16 nC (lower), Zener-protected gate, same TO-220FP package	Better ESD robustness and simpler gate drive, but 88% higher conduction loss at 4 A	Select for cost-sensitive, lower-frequency (<65 kHz) applications where avalanche margin is secondary

Compared with IPP60R099C7 and STP4NK50Z, SPD04N50C3T delivers optimal balance of low R_DS(on), moderate Q_g, flange isolation, and validated repetitive avalanche - making it preferred for compact, high-reliability 100 kHz industrial power stages.

Availability

SPD04N50C3T is available at Aetrix Electronics and suitable for industrial motor drives, solar inverter DC-DC stages, and UPS inverter output stages requiring stable component supply and long-term lifecycle support.

Supply support for SPD04N50C3T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

SPD04N50C3T belongs to the MDmesh™ C3 superjunction MOSFET product line, engineered specifically for high-efficiency, high-voltage switched-mode power supplies operating above 65 kHz with stringent reliability requirements.

FAQ

What is the maximum allowable junction temperature for SPD04N50C3T?

The absolute maximum junction temperature (T_jmax) is 150 °C, as specified in the Absolute Maximum Ratings table. Continuous operation above this limit risks permanent degradation of the superjunction structure and accelerated parametric drift. Thermal design must ensure T_j remains ≤150 °C under worst-case ambient and power dissipation conditions.

Does SPD04N50C3T support paralleling for higher current capacity?

Yes - its positive temperature coefficient of R_DS(on) (increasing with T_j) enables stable current sharing when multiple devices are paralleled. However, layout symmetry (matched gate and source inductance) and individual gate resistors (≥10 Ω) are mandatory to prevent oscillation and dynamic current imbalance during switching transitions.

Is the body diode suitable for synchronous rectification in LLC resonant converters?

No - while the body diode has soft recovery (Q_rr = 0.9 µC, t_rr = 120 ns), its forward voltage (V_SD ≈ 1.3 V at 4 A) is too high for efficient synchronous rectification. Dedicated low-V_F Schottky or GaN-based synchronous rectifiers are recommended for that function.

What is the recommended gate resistor value for hard-switched 100 kHz operation?

A gate resistor of 10 Ω is recommended for 100 kHz hard-switched operation with a 2 A peak gate driver. This value balances switching speed (t_r/t_f ≈ 15/25 ns) against gate ringing and EMI. Lower values (≤5 Ω) increase dV/dt stress and require tighter layout; higher values (>22 Ω) raise switching losses beyond acceptable levels at this frequency.

SPD04N50C3T Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: *

Package/Case:: -

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

SPD04N50C3T FAQ

1.How can I place an order for SPD04N50C3T through Aetrix?

Please submit a Request for Quotation (RFQ) for SPD04N50C3T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPD04N50C3T reliable?

The price and inventory of SPD04N50C3T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD04N50C3T is usually 5 days.

3.What payment methods are accepted for SPD04N50C3T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD04N50C3T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPD04N50C3T?

SPD04N50C3T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPD04N50C3T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPD04N50C3T?

For technical support, including SPD04N50C3T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD04N50C3T requirements.

6.How does Aetrix verify that SPD04N50C3T is sourced from the original manufacturer or authorized distributors?

All SPD04N50C3T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD04N50C3T meets industry standards.

7.What is the process for return or replacement of SPD04N50C3T?

All SPD04N50C3T units undergo pre-shipment inspection (PSI). If there is an issue with SPD04N50C3T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPD04N50C3T part is unused and in its original packaging.

Return procedure for SPD04N50C3T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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