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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRF6711STR1PBF MOSFET N-CH 25V 19A DIRECTFET Infineon Technologies	7,851	RFQ	Datasheet	HEXFET®	DirectFET™ Isometric SQ	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	25 V	19A (Ta), 84A (Tc)	4.5V, 10V	3.8mOhm @ 19A, 10V	2.35V @ 25µA	20 nC @ 4.5 V	±20V	1810 pF @ 13 V	-	2.2W (Ta), 42W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	DIRECTFET™ SQ
IRFH7440TR2PBF MOSFET N-CH 40V 85A 8PQFN Infineon Technologies	8,856	RFQ	Datasheet	-	8-PowerTDFN	Cut Tape (CT)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	85A (Tc)	-	2.4mOhm @ 50A, 10V	3.9V @ 100µA	138 nC @ 10 V	-	4574 pF @ 25 V	-	-	-	-	-	Surface Mount	8-PQFN (5x6)
IRFH4210TRPBF MOSFET N-CH 25V 45A PQFN Infineon Technologies	9,881	RFQ	Datasheet	HEXFET®	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	25 V	45A (Ta)	4.5V, 10V	1.35mOhm @ 50A, 10V	2.1V @ 100µA	74 nC @ 10 V	±20V	4812 pF @ 13 V	-	3.6W (Ta), 104W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PQFN (5x6)
ISZ0804NLSATMA1 MOSFET N-CH 100V 11A/58A TSDSON Infineon Technologies	8,536	RFQ	Datasheet	OptiMOS™ 5	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	11A (Ta), 58A (Tc)	4.5V, 10V	11.5mOhm @ 20A, 10V	2.3V @ 28µA	24 nC @ 10 V	±20V	1600 pF @ 50 V	-	2.1W (Ta), 60W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TSDSON-8-26
ISC007N06LM6ATMA1 TRENCH 40<-<100V Infineon Technologies	3,267	RFQ	-	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF1503LPBF MOSFET N-CH 30V 75A TO262 Infineon Technologies	2,895	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	75A (Tc)	10V	3.3mOhm @ 140A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	5730 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRF7807VD1TR MOSFET N-CH 30V 8.3A 8SO Infineon Technologies	6,919	RFQ	Datasheet	FETKY™	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	8.3A (Ta)	4.5V	25mOhm @ 7A, 4.5V	3V @ 250µA	14 nC @ 4.5 V	±20V	-	Schottky Diode (Isolated)	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
IRL3705ZS MOSFET N-CH 55V 75A D2PAK Infineon Technologies	6,810	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	75A (Tc)	4.5V, 10V	8mOhm @ 52A, 10V	3V @ 250µA	60 nC @ 5 V	±16V	2880 pF @ 25 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRFS7787TRLPBF MOSFET N-CH 75V 76A D2PAK Infineon Technologies	4,607	RFQ	Datasheet	HEXFET®, StrongIRFET™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	75 V	76A (Tc)	6V, 10V	8.4mOhm @ 46A, 10V	3.7V @ 100µA	109 nC @ 10 V	±20V	4020 pF @ 25 V	-	125W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-3
SPP20N60CFDXKSA1 MOSFET N-CH 650V 20.7A TO220-3 Infineon Technologies	8,407	RFQ	Datasheet	CoolMOS™	TO-220-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	650 V	20.7A (Tc)	10V	220mOhm @ 13.1A, 10V	5V @ 1mA	124 nC @ 10 V	±20V	2400 pF @ 25 V	-	208W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-1

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