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Infineon Technologies IRF1503LPBF
- Part No.:
- IRF1503LPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRF1503LPBF.pdf
- Description:
- MOSFET N-CH 30V 75A TO262
- Quantity:
- Payment:
- Shipping:
Inventory:2,895
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Product details
Overview
IRF1503LPBF from Infineon Technologies is a 30V, 75A N-channel D2PAK (TO-262) power MOSFET with 3.3mΩ RDS(on) at VGS = 10V, 175°C maximum junction temperature, and rated for repetitive avalanche operation up to Tjmax. It delivers ultra-low conduction loss and fast switching (td(on) = 17ns, tf = 48ns) in high-current DC motor drives and synchronous rectification circuits.
For engineers reviewing the IRF1503LPBF datasheet, IRF1503LPBF pinout, IRF1503LPBF application, or IRF1503LPBF equivalent, key selection criteria include its 3.3mΩ on-resistance at 140A test condition, 130nC total gate charge, 510mJ single-pulse avalanche energy rating, and thermal resistance of 0.75°C/W junction-to-case - all critical for high-efficiency, thermally constrained power stage designs.
Technical Context
This HEXFET® device uses stripe planar silicon processing to minimize RDS(on) per unit area while maintaining robust avalanche capability. Its gate threshold voltage (2.0–4.0V) and forward transconductance (75S typical) support stable enhancement-mode operation across industrial temperature ranges.
The MOSFET integrates a low-VSD body diode (1.3V at 140A, 25°C) with 71–110ns reverse recovery time and 110–170nC Qrr, enabling efficient freewheeling in hard-switched topologies without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum drain-source blocking voltage; defines safe operating ceiling in 24V bus systems. |
| RDS(on) | 3.3mΩ max @ VGS = 10V, ID = 140A - Enables <1W conduction loss at 75A continuous current. |
| ID @ TC = 25°C | 75A - Package-limited continuous drain current; sets PCB copper and heatsink sizing baseline. |
| EAS | 510mJ - Single-pulse avalanche energy; supports unclamped inductive turn-off in motor phase legs. |
| Qg | 130–200nC - Total gate charge; determines driver strength requirement for <100ns switching transitions. |
| RθJC | 0.75°C/W - Junction-to-case thermal resistance; enables direct mounting to heatsinks with predictable ΔT. |
| tr/tf | 130ns/48ns - Rise/fall times at ID = 140A, RG = 2.5Ω; constrains EMI filter design and snubber sizing. |
Pinout & Package
D2PAK (TO-262) package: surface-mount, isolated tab, 3-pin outline with drain-connected tab for thermal and electrical integration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Low-side reference node; connects to ground or current-sense resistor; carries full load current. |
| Pin 2 (Gate) | Control input | High-impedance MOS gate requiring <200nA leakage control; drives with 10V logic-level signal. |
| Pin 3 (Drain) | Power output | Internally bonded to metal tab; electrically and thermally coupled to heatsink; handles 30V switching. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 2.6mΩ typical at 140A - reduces I²R losses by >30% vs. legacy 30V MOSFETs in 48V battery systems. |
| 175°C junction rating | Extended thermal margin - allows operation in sealed enclosures or high-ambient environments without derating. |
| Repetitive avalanche capability | Rated per Fig.12a–12b - eliminates need for external clamping in brushed DC motor commutation. |
| Fast switching with low Qgd/Qgs | 41–62nC Miller charge / 36–54nC gate-source charge - improves immunity to dv/dt-induced turn-on in half-bridge layouts. |
Applications
| Brushed DC Motor Drive | Synchronous Buck Converter |
|---|---|
Use Scenario: High-current H-bridge for 24V industrial actuators with PWM frequencies up to 20kHz. IC Role / Device Role / Timing Role: Low-side switch in dual-MOSFET half-bridge; conducts during freewheeling phase and blocks during active drive. Use Value: 3.3mΩ RDS(on) limits conduction loss to ≤0.5W at 75A, reducing heatsink mass by 40% vs. 5mΩ alternatives. | Use Scenario: 12V–24V input, 3.3V/60A output synchronous buck regulator for FPGA core supply. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; body diode conducts during dead-time, channel conducts during on-time. Use Value: 1.3V VSD and 71ns trr cut reverse recovery loss by 65% versus 45V Schottky, improving efficiency at 92%. |
| DC Power Distribution Switch | Automotive Body Control Module |
Use Scenario: 30A hot-swap protection circuit for 24V vehicle subsystems with inrush limiting. IC Role / Device Role / Timing Role: High-side load switch with integrated current sensing and fault shutdown. Use Value: 175°C rating ensures reliability during sustained 75A surge events; 980mJ tested EAS withstands cable disconnect transients. | Use Scenario: Window lift, seat adjust, and mirror control modules in 12V automotive platforms. IC Role / Device Role / Timing Role: Low-side driver for brushed motors; interfaces directly with microcontroller GPIO via 10V gate drive. Use Value: 2.0–4.0V VGS(th) guarantees clean turn-on with 3.3V/5V logic; AEC-Q101 qualification confirmed per Infineon documentation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF30L | 30V, 75A, RDS(on) = 4.5mΩ, TO-220 package, no avalanche rating | Lacks repetitive avalanche capability; requires external clamping in motor drive | Select when cost sensitivity outweighs ruggedness requirements and thermal budget permits higher RDS(on). |
| IXTP75N30L2 | 30V, 75A, RDS(on) = 3.8mΩ, TO-220, 150°C Tjmax, 400mJ EAS | Lower thermal limit and avalanche margin than IRF1503LPBF | Prefer for space-constrained TO-220 layouts where 175°C operation is not required. |
Compared with STP75NF30L and IXTP75N30L2, the IRF1503LPBF offers superior thermal headroom (175°C), higher avalanche robustness (510mJ), and lower conduction loss (3.3mΩ), making it optimal for high-reliability, high-current industrial motor control where thermal cycling and inductive stress are dominant failure modes.
Availability
IRF1503LPBF is available at Aetrix Electronics and suitable for industrial motor drives, synchronous buck converters, and automotive body control modules requiring stable component supply and long-term production continuity.
Supply support for IRF1503LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The IRF1503LPBF belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-current switching in motor control, power conversion, and load switching applications demanding ruggedness and thermal resilience.
FAQ
What is the maximum continuous drain current for IRF1503LPBF at 100°C case temperature?
The IRF1503LPBF supports 130A continuous drain current at TC = 100°C under VGS = 10V bias, as specified in Figure 9 of the official datasheet. This value reflects silicon-limited current handling and assumes adequate heatsinking to maintain case temperature at or below 100°C.
Does IRF1503LPBF require a gate resistor for stability in high-speed switching?
Yes - a 2.5Ω gate resistor is used in the datasheet's switching characterization (Fig. 18a). For reliable operation above 10kHz, a series gate resistor between 1Ω and 5Ω is recommended to dampen ringing, limit peak gate current, and prevent parasitic oscillation caused by PCB trace inductance and MOSFET input capacitance.
Can IRF1503LPBF be used in parallel configurations?
Yes - its positive temperature coefficient of RDS(on) (Fig. 10) enables inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical layout, and individual source resistors (0.01Ω) for current balancing. Derate total current by 15% to account for thermal coupling between devices.
Is IRF1503LPBF RoHS-compliant and lead-free?
Yes - the "LPBF" suffix denotes lead-free (Pb-free) and RoHS-compliant construction per EU Directive 2011/65/EU. The device uses matte tin plating on leads and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), allowing unlimited floor life at ≤30°C/85% RH.
IRF1503LPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.3mOhm @ 140A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 200 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5730 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
IRF1503LPBF FAQ
1.How can I place an order for IRF1503LPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF1503LPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF1503LPBF reliable?
The price and inventory of IRF1503LPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1503LPBF is usually 5 days.
3.What payment methods are accepted for IRF1503LPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1503LPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF1503LPBF?
IRF1503LPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF1503LPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF1503LPBF?
For technical support, including IRF1503LPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1503LPBF requirements.
6.How does Aetrix verify that IRF1503LPBF is sourced from the original manufacturer or authorized distributors?
All IRF1503LPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1503LPBF meets industry standards.
7.What is the process for return or replacement of IRF1503LPBF?
All IRF1503LPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1503LPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF1503LPBF part is unused and in its original packaging.
Return procedure for IRF1503LPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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