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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH7440TR2PBF

Name: IRFH7440TR2PBF
Brand: Infineon Technologies
SKU: IRFH7440TR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH7440TR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IRFH7440TR2PBF.pdf

Description:: MOSFET N-CH 40V 85A 8PQFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFH7440TR2PBF from Infineon Technologies is a 40V, 159A N-channel enhancement-mode Power MOSFET in PQFN 5×6 mm package, featuring 1.8 mΩ typical R_DS(on) at V_GS = 10 V, 104 W P_D at T_C = 25°C, and optimized for high-efficiency half-bridge and BLDC motor drive topologies.

For engineers reviewing the IRFH7440TR2PBF datasheet, IRFH7440TR2PBF pinout, IRFH7440TR2PBF application, or IRFH7440TR2PBF equivalent, key selection criteria include its 2.4 mΩ max R_DS(on), 636 A pulsed drain current capability, 121 mJ single-pulse avalanche energy, and PQFN thermal performance with R_θJC(bottom) = 1.2°C/W.

Technical Context

This device employs trench-gate HEXFET® technology to achieve low conduction loss and fast switching with controlled dV/dt immunity. Its body diode supports synchronous rectification and exhibits 25 ns reverse recovery time (T_J = 25°C) and 1.2 A peak reverse recovery current.

The MOSFET delivers full-rated 159 A continuous drain current at T_C = 25°C with gate threshold voltage of 2.2–3.9 V and total gate charge of 92–138 nC, enabling efficient PWM control in DC/DC converters and inverterized motor drives.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage before avalanche onset; sets system bus voltage ceiling in 24–36 V DC applications.
R_DS(on) typ.	1.8 mΩ @ V_GS = 10 V, I_D = 50 A - Enables <1.5 W conduction loss at 50 A, critical for thermally constrained motor phases.
I_D cont.	159 A @ T_C = 25°C - Supports high-current half-bridge legs without parallel devices in compact BLDC inverters.
E_AS	121 mJ - Single-pulse avalanche energy rating ensures robustness against inductive switching transients in unclamped inductive loads.
Q_g	92–138 nC - Defines gate driver power requirement; enables <100 ns switching with 1.5 A peak gate current drivers.
R_θJC(bottom)	1.2 °C/W - Enables direct heatsinking via bottom-side thermal pad; allows >80 W dissipation with 100°C ΔT to heatsink.
t_rr	25 ns @ T_J = 25°C - Fast body diode recovery reduces shoot-through risk and switching losses in synchronous rectifier mode.

Pinout & Package

PQFN 5×6 mm package with exposed thermal pad on bottom side; 8-pin configuration optimized for low-inductance high-current routing and dual-sided cooling.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Power Drain (internally connected)	All eight pins are internally tied to the drain terminal and the exposed copper pad; provides low-impedance current path and thermal conduction to PCB.
G (Gate)	Control Input	Single gate terminal located at pin 1 corner; requires ≤20 V gate drive; 2.6 Ω internal gate resistance limits ringing.
S (Source)	Reference Node	Source connection made via dedicated source bond wires and S-terminal pad; defines local ground reference for gate drive and current sensing.

Key Features

Feature	Design Value
Enhanced dV/dt ruggedness	3.0 V/ns peak diode recovery dv/dt rating - prevents false turn-on during high-speed commutation in bridge circuits.
Characterized avalanche SOA	Thermally limited E_AS = 121 mJ and I_AR = 50 A - enables reliable operation under unclamped inductive switching without external snubbers.
Low C_oss eff. (ER)	863 pF - reduces capacitive switching loss and improves efficiency in resonant and hard-switched topologies above 100 kHz.
RoHS-compliant construction	No lead, bromide, or halogen - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) and industrial environmental compliance requirements.
Optimized body diode dI/dt	1126 A/µs rated di/dt capability - supports high-frequency synchronous rectification with minimal reverse recovery overshoot.

Applications

Brushed Motor Drive

BLDC Motor Drive

Use Scenario: High-current H-bridge for cordless power tools operating from 18–36 V battery packs.

IC Role / Device Role / Timing Role: Low-side and high-side switching element in half-bridge leg; handles bidirectional current up to 159 A peak.

Use Value: 1.8 mΩ R_DS(on) minimizes I²R heating during stall conditions, extending tool runtime and reducing thermal derating.

Use Scenario: Three-phase inverter for e-bike mid-drive motors with field-oriented control (FOC) at 20–50 kHz PWM.

IC Role / Device Role / Timing Role: Power switch in each phase leg; operates in hard-switched and synchronous rectification modes.

Use Value: 25 ns t_rr and 1.2 A I_RRM reduce dead-time uncertainty and switching loss, improving torque smoothness and efficiency.

DC/DC Converter

Synchronous Rectifier

Use Scenario: 48 V input, 12 V output isolated forward converter in telecom power supply with 300 kHz switching frequency.

IC Role / Device Role / Timing Role: Primary-side active clamp switch; subjected to repetitive avalanche stress during reset cycles.

Use Value: 121 mJ E_AS and fully characterized avalanche SOA eliminate need for external clamping diodes, simplifying layout and improving reliability.

Use Scenario: Secondary-side synchronous rectification in 48 V–5 V buck converter for server VRMs.

IC Role / Device Role / Timing Role: Low-V_DS rectifier replacing Schottky diode; body diode conducts during dead time, channel conducts during active period.

Use Value: 0.9–1.3 V V_SD and 2.4 mΩ R_DS(on) cut conduction loss by >40% vs. 45 V Schottky, directly improving conversion efficiency at 60 A load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH7447TR2PBF	Same PQFN 5×6 package; 40 V, 140 A, R_DS(on) = 2.0 mΩ typ., Q_g = 85 nC	Lower gate charge reduces driver loss but slightly higher R_DS(on) increases conduction loss at >100 A	Select when gate drive power budget is tighter than thermal margin.
SiR626DP-T1-GE3	Vishay 40 V, 160 A, R_DS(on) = 1.7 mΩ typ., PQFN 5×6, Q_g = 105 nC	Lower R_DS(on) improves conduction efficiency but higher Q_g demands stronger gate driver	Select when minimizing I²R loss dominates over switching loss in <100 kHz applications.

Compared with IRFH7440TR2PBF, IRFH7447TR2PBF trades 2.4 mΩ R_DS(on) for lower Q_g, while SiR626DP-T1-GE3 offers marginally lower on-resistance at the cost of increased gate drive demand-choice depends on whether conduction or switching loss dominates the target topology.

Availability

IRFH7440TR2PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and DC/DC converters requiring stable component supply and long-term industrial availability.

Supply support for IRFH7440TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the StrongIRFET™ HEXFET® Power MOSFET product line, engineered for high-current, high-ruggedness switching in motor control, power conversion, and OR-ing applications where thermal performance and avalanche reliability are critical.

FAQ

What is the maximum continuous drain current for IRFH7440TR2PBF at 100°C case temperature?

The maximum continuous drain current is 101 A at T_C = 100°C and V_GS = 10 V, per the Absolute Maximum Ratings table. This reflects thermal derating due to reduced heat transfer at elevated temperatures, and must be validated against actual board-level thermal design using R_θJC = 1.2°C/W and ambient conditions.

Does IRFH7440TR2PBF support synchronous rectification in buck converters?

Yes-it is qualified for synchronous rectification with a body diode forward voltage of 0.9–1.3 V at 50 A and reverse recovery time of 25 ns at 25°C. Its low R_DS(on) and fast diode enable high-efficiency secondary-side switching in step-down converters up to 500 kHz.

What is the gate threshold voltage range, and how does it affect drive circuit design?

V_GS(th) is specified from 2.2 V to 3.9 V at I_D = 100 µA. This wide range requires gate drive voltages ≥10 V to ensure full enhancement across process and temperature variation; 6 V drive yields only 2.7 mΩ R_DS(on), increasing conduction loss significantly.

Is IRFH7440TR2PBF suitable for avalanche-prone inductive switching applications?

Yes-its datasheet specifies 121 mJ single-pulse avalanche energy (E_AS) and characterizes repetitive avalanche curves. It is designed for unclamped inductive switching in motor drives and converters, provided junction temperature remains below 150°C and avalanche pulse timing follows Figure 15/16 guidelines.

IRFH7440TR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 138 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 4574 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (5x6)

IRFH7440TR2PBF FAQ

1.How can I place an order for IRFH7440TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH7440TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH7440TR2PBF reliable?

The price and inventory of IRFH7440TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH7440TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFH7440TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH7440TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH7440TR2PBF?

IRFH7440TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH7440TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH7440TR2PBF?

For technical support, including IRFH7440TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH7440TR2PBF requirements.

6.How does Aetrix verify that IRFH7440TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFH7440TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH7440TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFH7440TR2PBF?

All IRFH7440TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH7440TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH7440TR2PBF part is unused and in its original packaging.

Return procedure for IRFH7440TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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