Infineon Technologies IRF6711STR1PBF

Overview

IRF6711STR1PBF from Infineon Technologies (formerly International Rectifier) is a 25 V, 19 A N-channel Power MOSFET in DirectFET® packaging optimized as the control FET in high-frequency synchronous buck converters operating from a 12 V input bus. It delivers 3.0 mΩ R_DS(on) at V_GS = 10 V, 13 nC total gate charge, and 0.7 mm profile for dual-sided cooling in CPU core power delivery.

For engineers reviewing the IRF6711STR1PBF datasheet, IRF6711STR1PBF pinout, IRF6711STR1PBF application, or IRF6711STR1PBF equivalent, key selection criteria include low gate charge (13 nC), ultra-low package inductance, 3.0 mΩ on-resistance at 10 V drive, thermal resistance of 3.0 °C/W junction-to-case, and compatibility with standard SMT reflow processes per AN-1035.

Technical Context

This MOSFET employs HEXFET® silicon with DirectFET® packaging to achieve simultaneous reduction in conduction loss (R_DS(on) = 3.0 mΩ @ 10 V), switching loss (Q_g = 13 nC, Q_gd = 4.4 nC), and thermal resistance (R_θJC = 3.0 °C/W). Its gate threshold voltage (V_GS(th) = 1.8 V typ.) enables robust 4.5 V logic-level drive capability.

The device integrates a fast body diode with t_rr = 17–26 ns and Q_rr = 21–32 nC, supporting high di/dt operation in synchronous rectification. Its SOA is defined up to 150 °C case temperature with 62 A pulsed drain current rating under repetitive conditions.

Key Specifications

Pinout & Package

DirectFET® package (footprint compatible with MICRO-8, height ≤ 0.7 mm); copper top-side drain, bottom-side source/gate terminals; thermally enhanced dual-sided cooling structure.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar control-FET power MOSFET applications.

Compared with IRF6662TRPBF and SiR626DP-T1-GE3, the IRF6711STR1PBF offers the lowest thermal resistance and best R_DS(on) × Q_g tradeoff for space-constrained, high-frequency 12 V bus applications-making it optimal for next-gen CPU/GPU core power where thermal density and efficiency are co-primary constraints.

Availability

IRF6711STR1PBF is available at Aetrix Electronics and suitable for server CPU VRMs, AI accelerator power stages, telecom baseband PSUs, and industrial FPGA core supplies requiring stable component supply and long-lifecycle support.

Supply support for IRF6711STR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.

This part belongs to Infineon's DirectFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing and communications infrastructure where thermal density and switching loss dominate design constraints.

FAQ

What is the maximum recommended gate drive voltage for IRF6711STR1PBF?

The absolute maximum gate-to-source voltage is ±20 V, but the device is characterized and optimized for 10 V drive. Using 12–15 V gate drive yields marginal R_DS(on) improvement (<0.2 mΩ) while increasing gate oxide stress and ESD risk. For logic-level operation, 4.5 V is sufficient to achieve 5.2 mΩ R_DS(on) and full enhancement.

Can IRF6711STR1PBF be used as a synchronous rectifier (low-side FET)?

No-it is optimized as a control (high-side) FET. Its body diode has t_rr = 17–26 ns and Q_rr = 21–32 nC, which is acceptable for controlled turn-off but not ideal for freewheeling. For synchronous rectification, Infineon recommends complementary low-Q_rr devices like IRF6775MTRPBF with matched R_DS(on) and faster diode recovery.

How does the DirectFET® package improve thermal performance over SO-8?

The DirectFET® package eliminates bond wires and plastic molding compound, exposing copper drain and source pads directly. This reduces R_θJC from ~6.5 °C/W (SO-8) to 3.0 °C/W and enables thermal transfer from both top (drain) and bottom (source/gate) surfaces-achieving up to 80% lower effective thermal resistance in dual-cooled layouts per application note AN-1035.

Is IRF6711STR1PBF suitable for automotive applications?

It is not AEC-Q101 qualified and lacks automotive-specific screening (e.g., HTOL, UHAST). While its -40°C to +150°C operating range meets ambient requirements, Infineon does not guarantee automotive-grade reliability or PPAP documentation. For automotive ADAS or infotainment power stages, use AEC-Q101 qualified alternatives such as IPB037N04LG.