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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL3705ZS

Name: IRL3705ZS
Brand: Infineon Technologies
SKU: IRL3705ZS
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL3705ZS

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL3705ZS.pdf

Description:: MOSFET N-CH 55V 75A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRL3705ZS from Infineon Technologies is a logic-level N-channel HEXFET® Power MOSFET in D2PAK (TO-263) package, rated for 55V V_DSS, 8.0 mΩ R_DS(on) at V_GS = 4.5V, and 75A continuous drain current at T_C = 25°C. It features 175°C junction temperature rating, fast switching (t_r = 240 ns, t_f = 83 ns), and tested repetitive avalanche capability up to T_jmax, enabling robust operation in high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRL3705ZS datasheet, IRL3705ZS pinout, IRL3705ZS application, or IRL3705ZS equivalent, key selection criteria include its low 4.5V-threshold gate drive compatibility, body diode reverse recovery charge (Q_rr = 7.4–11 nC), thermal resistance (R_θJC = 1.14°C/W), and avalanche energy rating (E_AS = 340 mJ), all critical for synchronous rectification and inductive load switching.

Technical Context

This MOSFET employs advanced silicon processing to minimize on-resistance per unit area while maintaining ruggedness. Its logic-level gate threshold (V_GS(th) = 1.0–3.0 V) enables direct drive from 3.3V/5V microcontrollers without level-shifting, and its low Q_g (40–60 nC) and Q_gd (21 nC) support high-frequency PWM operation up to several hundred kHz.

The integrated body diode exhibits fast reverse recovery (t_rr = 16–24 ns) and low forward voltage (V_SD = 1.3 V), making it suitable for freewheeling paths where diode conduction occurs during dead time. Thermal design is supported by validated transient impedance curves and a 1.14°C/W junction-to-case resistance under standard mounting conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche; defines upper limit for bus voltage in buck converters or H-bridge arms.
R_DS(on) @ V_GS = 4.5V	8.0 mΩ (max) - Enables <1W conduction loss at 40A, critical for thermally constrained 12V/24V power stages.
I_D (continuous) @ T_C = 25°C	75 A - Silicon-limited current capacity; requires heatsinking to sustain in real-world PCB-mount applications.
Q_g	40–60 nC - Total gate charge determines driver strength requirement; supports efficient 100–500 kHz switching with moderate gate resistors.
E_AS	340 mJ (tested) - Single-pulse avalanche energy rating confirms reliability under unclamped inductive turn-off stress in motor control.
t_r/t_f	240 ns / 83 ns - Rise/fall times define minimum practical dead time and EMI profile in bridge configurations.
T_J max	175°C - Junction temperature limit enables operation in sealed enclosures or high ambient environments without derating.

Pinout & Package

IRL3705ZS is housed in a surface-mount D2PAK (TO-263) package with three terminals: Drain (tab), Source (pins 1 & 2), and Gate (pin 3). The exposed drain pad provides low-inductance, high-current path and serves as primary thermal interface to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to package backside	Must be soldered to large copper pour for thermal and electrical performance; contributes <4.5 nH internal inductance.
Source (Pins 1 & 2)	Reference node for gate drive and current return path	Dual-pin layout reduces source inductance (<7.5 nH); critical for minimizing gate oscillation during fast switching.
Gate (Pin 3)	Control electrode for channel formation	Logic-level compatible (V_GS(th) ≤ 3.0 V); requires <60 nC total charge for full enhancement.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.5V, eliminating need for gate drivers in MCU-based 5V systems.
Ultra-low R_DS(on)	8.0 mΩ at 4.5V enables >95% efficiency in 12V input, 50A output synchronous buck converters.
Repetitive avalanche rated	Validated for repeated unclamped inductive switching up to T_jmax, supporting robust motor phase-leg design.
175°C maximum junction temperature	Permits operation in automotive under-hood or industrial sealed environments without forced air cooling.
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1), allowing standard reflow without baking.

Applications

DC-DC Synchronous Rectifier

Brushed DC Motor Half-Bridge

Use Scenario: High-efficiency 12V-to-5V/3.3V point-of-load converter in telecom base station power modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; switches at 300 kHz with 100 ns dead time.

Use Value: Reduces conduction loss by 65% vs. 40V Schottky, lowering thermal load on 2-layer PCB with 2 oz copper.

Use Scenario: Bidirectional 24V brushed motor control in warehouse AGV drive system.

IC Role / Device Role / Timing Role: High-current half-bridge switch handling 60A peak stall current; driven by isolated gate driver.

Use Value: Withstands 340A pulsed avalanche events during emergency stop, preventing catastrophic failure during regenerative braking.

Automotive HVAC Blower Driver

Industrial PLC Output Stage

Use Scenario: PWM-controlled cabin blower fan in passenger vehicle, operating continuously at 85°C ambient.

IC Role / Device Role / Timing Role: Single-ended switch controlling motor speed via 20 kHz PWM; body diode handles freewheeling.

Use Value: 175°C T_jmax and low V_SD (1.3 V) ensure stable 100% duty cycle operation without thermal shutdown.

Use Scenario: Solid-state relay replacement in programmable logic controller output module driving solenoid valves.

IC Role / Device Role / Timing Role: High-reliability load switch with integrated avalanche protection for inductive load turn-off.

Use Value: Eliminates external snubber components due to 340 mJ E_AS rating, reducing BOM count and board space by 35%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF75	Higher R_DS(on) (7.5 mΩ @ 10V, but 12 mΩ @ 4.5V); TO-220 package; no avalanche rating published	Limited to lower-frequency (<100 kHz), non-avalanche-critical applications due to missing E_AS validation	Prefer when cost-sensitive and gate drive is 10V; avoid in 4.5V logic-level or inductive switching designs.
IRF1404Z	Higher V_DSS (40V), higher R_DS(on) (8.1 mΩ @ 10V), TO-220AB; avalanche rated but E_AS = 220 mJ (lower)	Suitable only for 24V systems with lower peak currents; less margin for overvoltage transients	Select only if legacy TO-220 footprint required; inferior thermal performance (R_θJC = 1.3°C/W) limits power density.

Compared with STP75NF75 and IRF1404Z, IRL3705ZS delivers superior 4.5V drive capability, higher avalanche energy margin, and lower thermal resistance-making it the optimal choice for compact, high-reliability 12–24V motor and power conversion designs requiring logic-level compatibility and ruggedness.

Availability

IRL3705ZS is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, industrial PLC outputs, and automotive HVAC systems requiring stable component supply across multi-year production cycles.

Supply support for IRL3705ZS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

The IRL3705ZS belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered specifically for high-current, low-voltage switching applications where gate drive simplicity, thermal robustness, and avalanche survivability are mandatory.

FAQ

What is the maximum continuous drain current for IRL3705ZS at 100°C case temperature?

The IRL3705ZS supports 43A continuous drain current at T_C = 100°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be verified against actual PCB copper area and airflow in the target application.

Does IRL3705ZS have a specified reverse recovery time for its body diode?

Yes-the body diode reverse recovery time (t_rr) is specified as 16–24 ns under conditions of I_F = 43A, di/dt = 100 A/µs, and T_J = 25°C. This fast recovery enables use in synchronous rectification without significant switching loss penalty.

Can IRL3705ZS be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (see Fig. 10) ensures inherent current sharing stability when multiple devices operate in parallel. Designers must match gate drive loop inductance and use Kelvin-source connections to maintain balance at >100A aggregate current.

Is the D2PAK package of IRL3705ZS compatible with standard reflow profiles?

Yes-the IRL3705ZS is qualified to MSL-1 per IPC-J-STD-020 and supports JEDEC-standard lead-free reflow (peak 260°C, 10-second dwell). The exposed drain pad requires full-solder coverage to a thermal pad for both mechanical reliability and thermal performance.

IRL3705ZS Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 52A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 2880 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 130W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRL3705ZS FAQ

1.How can I place an order for IRL3705ZS through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL3705ZS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL3705ZS reliable?

The price and inventory of IRL3705ZS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL3705ZS is usually 5 days.

3.What payment methods are accepted for IRL3705ZS?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL3705ZS transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL3705ZS?

IRL3705ZS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL3705ZS order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL3705ZS?

For technical support, including IRL3705ZS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL3705ZS requirements.

6.How does Aetrix verify that IRL3705ZS is sourced from the original manufacturer or authorized distributors?

All IRL3705ZS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL3705ZS meets industry standards.

7.What is the process for return or replacement of IRL3705ZS?

All IRL3705ZS units undergo pre-shipment inspection (PSI). If there is an issue with IRL3705ZS, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL3705ZS part is unused and in its original packaging.

Return procedure for IRL3705ZS:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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