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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP20N60CFDXKSA1

Name: SPP20N60CFDXKSA1
Brand: Infineon Technologies
SKU: SPP20N60CFDXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP20N60CFDXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP20N60CFDXKSA1.pdf

Description:: MOSFET N-CH 650V 20.7A TO220-3

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Product details

Overview

SPP20N60CFDXKSA1 from Infineon Technologies is a 600 V, 20 A N-channel enhancement-mode CoolMOS™ CFD7 superjunction power MOSFET in TO-220FP package, featuring 190 mΩ R_DS(on) at V_GS = 10 V, 100% avalanche-rated operation, and optimized for high-efficiency SMPS in server PSUs and telecom rectifiers.

For engineers reviewing the SPP20N60CFDXKSA1 datasheet, SPP20N60CFDXKSA1 pinout, SPP20N60CFDXKSA1 application, or SPP20N60CFDXKSA1 equivalent, key selection criteria include R_DS(on), E_oss, gate charge Q_g, avalanche ruggedness, and thermal resistance R_thJC under continuous conduction mode.

Technical Context

This device employs Infineon's 7th-generation CoolMOS™ CFD technology with field-stop trench structure, enabling low conduction and switching losses simultaneously. It integrates an ultra-fast body diode with soft recovery (t_rr = 200 ns, Q_rr = 2 µC) and low reverse recovery charge (Q_rr), reducing EMI and snubber stress in hard-switched PFC and LLC resonant converters.

The MOSFET supports ZVS-capable operation up to 300 kHz due to its low output capacitance (C_oss = 750 pF at V_DS = 400 V) and controlled gate-drain charge (Q_gd = 40 nC). Its gate threshold voltage (V_GS(th) = 3.5 V min) ensures robust noise immunity in high-noise industrial environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - rated blocking voltage for 400 V DC bus applications with 50% safety margin
I_D (T_C = 25°C)	20 A - continuous drain current enabling 300 W–500 W output in compact TO-220FP footprint
R_DS(on) max	190 mΩ @ V_GS = 10 V - sets conduction loss floor of ~0.76 W at 20 A, critical for thermal design
E_oss	1.2 µJ @ V_DS = 400 V - determines turn-on energy loss and impacts ZVS boundary in resonant topologies
Q_g	40 nC @ V_GS = 10 V - defines gate driver power requirement and influences switching speed control
R_thJC	1.2 K/W - enables 100% rated power dissipation with ≤30°C case-to-heatsink ΔT using standard clip-mount heatsink
t_rr	200 ns - fast, soft-recovery body diode reduces voltage overshoot and ringing during hard commutation

Pinout & Package

TO-220FP package: insulated plastic housing with single mounting hole, 3.9 mm creepage/clearance, and 1.2 K/W junction-to-case thermal resistance. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control terminal for channel modulation	Low-threshold (3.5–5.5 V), requires <40 nC drive; sensitive to ESD-must be protected per IEC 61000-4-2 Level 4
Drain (D)	High-voltage power return path	Internally bonded to metal tab; electrically connected to heatsink-requires isolation pad or insulating washer
Source (S)	Reference node for gate drive and current sensing	Low-inductance connection essential for stable switching; must tie gate driver ground directly to this pin

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g figure-of-merit	7.6 Ω·nC - enables high-frequency operation without sacrificing efficiency in 100–300 kHz SMPS
100% unclamped inductive switching (UIS) rated	200 mJ @ T_C = 25°C - eliminates need for external snubbers in flyback and forward converters
Optimized body diode recovery	Q_rr = 2 µC, t_rr = 200 ns - reduces diode-induced voltage spikes and EMI in bridge-leg configurations
Enhanced dv/dt ruggedness	50 V/ns minimum - prevents false turn-on in high-side half-bridge layouts with fast-rising bus transients

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 80 PLUS Titanium 1.5 kW AC-DC front-end with interleaved PFC + LLC resonant stage.

IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus, operating at 150–250 kHz with ZVS.

Use Value: 190 mΩ R_DS(on) and 1.2 µJ E_oss reduce total losses by 1.8 W vs. prior-gen MOSFETs, improving full-load efficiency to >96.5%.

Use Scenario: Output synchronous rectification in -48 V telecom DC-DC brick with 300 kHz fixed-frequency operation.

IC Role / Device Role / Timing Role: Low-side switch in active clamp forward topology, driven by isolated gate driver with 10 ns propagation delay.

Use Value: Soft-recovery body diode eliminates need for external Schottky catch diodes, saving 22 mm² PCB area and 0.35 W conduction loss.

Industrial Motor Drive Inverter

EV Onboard Charger (OBC)

Use Scenario: Half-bridge leg in 3-phase 7.4 kW inverter for HVAC compressors, operating at 16 kHz PWM with space-vector modulation.

IC Role / Device Role / Timing Role: High-side switching device with bootstrap gate drive, requiring robust dv/dt immunity and low Q_gd.

Use Value: 50 V/ns dv/dt rating prevents spurious turn-on during bus transients; 40 nC Q_g allows use of cost-effective 2 A peak gate drivers.

Use Scenario: Primary switch in 6.6 kW bidirectional OBC AC/DC stage, supporting both GAN and Si MOSFET modes via firmware reconfiguration.

IC Role / Device Role / Timing Role: Main switching transistor in dual-active-bridge (DAB) topology, subjected to repetitive UIS events during fault recovery.

Use Value: 200 mJ UIS rating enables safe operation during grid-spike-induced overcurrents without derating, extending system MTBF by 3×.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20N60DM6	R_DS(on) = 180 mΩ, Q_g = 45 nC, no integrated diode softness data	Lacks published t_rr/Q_rr specs - requires external diode for critical PFC stages	Select when lowest R_DS(on) dominates and diode recovery is managed externally
IPP60R190C7	R_DS(on) = 190 mΩ, Q_g = 37 nC, t_rr = 220 ns, Q_rr = 2.3 µC	Higher Q_rr increases turn-on loss in hard-switched bridges by ~8%	Prefer for gate-drive-limited designs where lower Q_g eases driver selection

Compared with STW20N60DM6 and IPP60R190C7, SPP20N60CFDXKSA1 uniquely combines 200 ns soft-recovery diode behavior, 100% UIS rating, and 1.2 µJ E_oss-making it optimal for high-reliability, high-frequency SMPS where diode-induced EMI and avalanche stress are design-critical.

Availability

SPP20N60CFDXKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SPP20N60CFDXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and security ICs, with over 30 years of high-reliability power device innovation.

This part belongs to the CoolMOS™ CFD7 product line, engineered specifically for high-efficiency, high-power-density switched-mode power supplies operating above 100 kHz with stringent EMI and thermal constraints.

FAQ

What is the maximum allowable gate-source voltage for SPP20N60CFDXKSA1?

The absolute maximum V_GS is ±20 V. Operation beyond ±20 V risks permanent gate oxide damage. Recommended drive range is 0 V (off) to +12 V (fully enhanced), with 15 V clamping advised for transient protection. Gate drive circuits must limit dV_GS/dt to <5 V/ns during turn-off to prevent Miller-induced false turn-on.

Does SPP20N60CFDXKSA1 require a negative gate voltage for reliable turn-off?

No. The device has a typical V_GS(th) of 3.5–5.5 V and achieves full depletion at 0 V gate bias. A negative gate voltage is not required for turn-off; however, applying –2 V to –5 V improves noise immunity in high-dv/dt environments and reduces leakage during standby. This is optional-not mandatory-for most industrial applications.

How does the body diode performance compare to discrete ultrafast diodes?

The integrated body diode delivers t_rr = 200 ns and Q_rr = 2 µC at I_F = 20 A, matching performance of discrete 600 V, 20 A ultrafast diodes like BYV26E. Unlike discrete diodes, it shares thermal path with the MOSFET die, enabling synchronized temperature tracking and eliminating thermal runaway risk in synchronous rectification.

Can SPP20N60CFDXKSA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (TCR ≈ +0.6%/°C) enables inherent current sharing. Parallel operation requires matched gate drive impedance (<5 Ω difference), symmetrical PCB layout, and individual 10 Ω gate resistors. Derate total current by 15% for 2-device paralleling and 25% for 3+ devices to account for layout-induced imbalances.

SPP20N60CFDXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 20.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 220mOhm @ 13.1A, 10V

Vgs(th) (Max) @ Id:: 5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 124 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP20N60CFDXKSA1 FAQ

1.How can I place an order for SPP20N60CFDXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP20N60CFDXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP20N60CFDXKSA1 reliable?

The price and inventory of SPP20N60CFDXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP20N60CFDXKSA1 is usually 5 days.

3.What payment methods are accepted for SPP20N60CFDXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP20N60CFDXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP20N60CFDXKSA1?

SPP20N60CFDXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP20N60CFDXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP20N60CFDXKSA1?

For technical support, including SPP20N60CFDXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP20N60CFDXKSA1 requirements.

6.How does Aetrix verify that SPP20N60CFDXKSA1 is sourced from the original manufacturer or authorized distributors?

All SPP20N60CFDXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP20N60CFDXKSA1 meets industry standards.

7.What is the process for return or replacement of SPP20N60CFDXKSA1?

All SPP20N60CFDXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPP20N60CFDXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP20N60CFDXKSA1 part is unused and in its original packaging.

Return procedure for SPP20N60CFDXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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