Infineon Technologies IRFS7787TRLPBF

Overview

IRFS7787TRLPBF from Infineon Technologies is a 75 V, 76 A (T_C = 25°C), D²PAK (TO-263) N-channel enhancement-mode Power MOSFET with 6.9 mΩ typical R_DS(on) at V_GS = 10 V, optimized for high-efficiency synchronous rectification and half-bridge motor drive in battery-powered BLDC inverters.

For engineers reviewing the IRFS7787TRLPBF datasheet, IRFS7787TRLPBF pinout, IRFS7787TRLPBF application, or IRFS7787TRLPBF equivalent, key selection criteria include its 144 mJ single-pulse avalanche energy, 10 V/ns diode dv/dt capability, 33 ns reverse recovery time at 25°C, and thermal resistance R_θJC of 1.2°C/W - critical for thermally constrained 48 V industrial motor control designs.

Technical Context

This HEXFET® device uses planar stripe cell structure with optimized gate oxide and body diode doping to deliver enhanced dV/dt ruggedness and reduced Q_gd/Q_g ratio (23/73 nC). Its dynamic parameters - including 48 ns rise time and 39 ns fall time at I_D = 46 A - support hard-switched operation up to 100 kHz in resonant DC/DC converters.

The integrated body diode exhibits 1.2 V forward voltage at I_S = 46 A and 39 ns trr at 125°C, enabling reliable OR-ing and redundant power switching without external Schottky supplementation in 24–48 V systems.

Key Specifications

Pinout & Package

D²PAK (TO-263) surface-mount package with exposed drain pad for low-inductance, high-current PCB routing and thermal transfer to copper pour or heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL220N7F7AG and IXTP76N10P, IRFS7787TRLPBF offers optimal balance of low R_DS(on), moderate Q_g, and industry-standard D²PAK thermal performance - making it preferred for space-constrained, medium-frequency (50–100 kHz), 48 V motor and power conversion designs where gate drive simplicity and thermal reliability are prioritized.

Availability

IRFS7787TRLPBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverter stages, and synchronous rectification circuits requiring stable component supply across automotive aftermarket, industrial automation, and renewable energy OEM programs.

Supply support for IRFS7787TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with core expertise in silicon and wide-bandgap power devices.

This device belongs to the StrongIRFET™ HEXFET® family, engineered specifically for high-reliability, high-current switching in motor control, power conversion, and redundant power architectures where avalanche robustness and body diode performance are mission-critical.

FAQ

What is the maximum gate-to-source voltage rating for IRFS7787TRLPBF?

The absolute maximum V_GS is ±20 V per the datasheet Absolute Maximum Ratings table. Operation beyond ±15 V risks gate oxide degradation, especially at elevated temperatures. Recommended drive range is 10–15 V for full enhancement with margin; gate drive circuits must include clamping or zener protection to prevent overshoot during fast switching.

Does IRFS7787TRLPBF require a gate resistor, and what value is recommended?

Yes - a series gate resistor (typically 2.7–10 Ω) is required to dampen ringing and control dV/dt during turn-on/turn-off. The device's internal gate resistance is 2.1 Ω, so external resistance should be selected to achieve total R_G ≈ 5–10 Ω depending on switching speed and EMI requirements. Lower values increase switching speed but raise EMI risk; higher values reduce losses in gate driver ICs.

Can IRFS7787TRLPBF be used in parallel configurations, and what precautions apply?

Yes - its positive R_DS(on) temperature coefficient (0.06 V/°C) enables inherent current sharing. Key precautions include matched PCB trace inductance, symmetrical gate drive routing, individual gate resistors, and thermal coupling via shared heatsink. Derate total current by 15% versus sum of individual ratings to account for thermal and parametric mismatch under transient conditions.

Is IRFS7787TRLPBF suitable for linear (analog) operation, such as in electronic loads or adjustable regulators?

No - it is optimized for switching operation only. Its Safe Operating Area (SOA) curve shows limited DC capability (≤10 A at 50 V) due to thermal limitations in the D²PAK package. Linear use risks localized hot-spot formation and premature failure. For analog applications, discrete lateral MOSFETs or dedicated linear pass devices (e.g., IXTP series) are recommended instead.