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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
SPW11N60S5FKSA1 MOSFET N-CH 600V 11A TO247-3 Infineon Technologies	4,579	RFQ	Datasheet	CoolMOS™	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	11A (Tc)	10V	380mOhm @ 7A, 10V	5.5V @ 500µA	54 nC @ 10 V	±20V	1460 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-1
SI4420DYTR MOSFET N-CH 30V 12.5A 8SO Infineon Technologies	4,189	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	12.5A (Ta)	4.5V, 10V	9mOhm @ 12.5A, 10V	1V @ 250µA	78 nC @ 10 V	±20V	2240 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
IRLU3705Z MOSFET N-CH 55V 42A I-PAK Infineon Technologies	2,238	RFQ	Datasheet	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	42A (Tc)	4.5V, 10V	8mOhm @ 42A, 10V	3V @ 250µA	66 nC @ 5 V	±16V	2900 pF @ 25 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK
GS-065-011-6-L-TR GS-065-011-6-L-TR Infineon Technologies Canada Inc.	2,003	RFQ	-	-	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	700 V	12.2A (Tc)	6V	180mOhm @ 3.2A, 6V	2.6V @ 2.4mA	2.2 nC @ 6 V	+7V, -10V	70 pF @ 400 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PDFN (5x6)
IPB180N04S4L01ATMA1 MOSFET N-CH 40V 180A TO263-7 Infineon Technologies	2,945	RFQ	Datasheet	OptiMOS™	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	180A (Tc)	4.5V, 10V	1.2mOhm @ 100A, 10V	2.2V @ 140µA	245 nC @ 10 V	+20V, -16V	19100 pF @ 25 V	-	188W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO263-7-3
IRF7492 MOSFET N-CH 200V 3.7A 8SO Infineon Technologies	6,059	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	3.7A (Ta)	10V	79mOhm @ 2.2A, 10V	2.5V @ 250µA	59 nC @ 10 V	±20V	1820 pF @ 25 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
IRF3515STRL MOSFET N-CH 150V 41A D2PAK Infineon Technologies	3,614	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	150 V	41A (Tc)	10V	45mOhm @ 25A, 10V	4.5V @ 250µA	107 nC @ 10 V	±30V	2260 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
AUIRF6215 MOSFET P-CH 150V 13A TO220AB Infineon Technologies	5,419	RFQ	Datasheet	HEXFET®	TO-220-3	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	150 V	13A (Tc)	10V	290mOhm @ 6.6A, 10V	4V @ 250µA	66 nC @ 10 V	±20V	860 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
IRL8113 MOSFET N-CH 30V 105A TO220AB Infineon Technologies	6,752	RFQ	Datasheet	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	105A (Tc)	4.5V, 10V	6mOhm @ 21A, 10V	2.25V @ 250µA	35 nC @ 4.5 V	±20V	2840 pF @ 15 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
ISC007N06NM6ATMA1 TRENCH 40<-<100V Infineon Technologies	9,877	RFQ	-	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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