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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
BTS282Z E3230 MOSFET N-CH 49V 80A TO220-7 Infineon Technologies	2,026	RFQ	Datasheet	TEMPFET®	TO-220-7	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	49 V	80A (Tc)	4.5V, 10V	6.5mOhm @ 36A, 10V	2V @ 240µA	232 nC @ 10 V	±20V	4800 pF @ 25 V	Temperature Sensing Diode	300W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	P-TO220-7-230
IRFI4121H-117P MOSFET N-CH 100V 11A TO220-5 Infineon Technologies	3,423	RFQ	Datasheet	-	-	Tube	Obsolete	-	-	-	11A (Tc)	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFSL4410 MOSFET N-CH 100V 96A TO262 Infineon Technologies	8,806	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	96A (Tc)	10V	10mOhm @ 58A, 10V	4V @ 150µA	180 nC @ 10 V	±20V	5150 pF @ 50 V	-	250W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
BSC017N04NSGATMA1 MOSFET N-CH 40V 30A/100A TDSON Infineon Technologies	7,634	RFQ	Datasheet	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	30A (Ta), 100A (Tc)	10V	1.7mOhm @ 50A, 10V	4V @ 85µA	108 nC @ 10 V	±20V	8800 pF @ 20 V	-	2.5W (Ta), 139W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TDSON-8-1
IPP05CN10NGXKSA1 MOSFET N-CH 100V 100A TO220-3 Infineon Technologies	9,727	RFQ	Datasheet	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	100A (Tc)	10V	5.4mOhm @ 100A, 10V	4V @ 250µA	181 nC @ 10 V	±20V	12000 pF @ 50 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3
IRLI540N MOSFET N-CH 100V 23A TO220AB FP Infineon Technologies	6,533	RFQ	Datasheet	HEXFET®	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	23A (Tc)	4V, 10V	44mOhm @ 12A, 10V	2V @ 250µA	74 nC @ 5 V	±16V	1800 pF @ 25 V	-	54W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-FP
IRF3205ZL MOSFET N-CH 55V 75A TO262 Infineon Technologies	7,861	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	75A (Tc)	10V	6.5mOhm @ 66A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	3450 pF @ 25 V	-	170W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRFB41N15D MOSFET N-CH 150V 41A TO220AB Infineon Technologies	2,576	RFQ	Datasheet	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	150 V	41A (Tc)	10V	45mOhm @ 25A, 10V	5.5V @ 250µA	110 nC @ 10 V	±30V	2520 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
AUIRFS3107 MOSFET N-CH 75V 195A D2PAK Infineon Technologies	9,983	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	75 V	195A (Tc)	10V	3mOhm @ 140A, 10V	4V @ 250µA	240 nC @ 10 V	±20V	9370 pF @ 50 V	-	370W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRFZ48VS MOSFET N-CH 60V 72A D2PAK Infineon Technologies	6,199	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	72A (Tc)	10V	12mOhm @ 43A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	1985 pF @ 25 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK

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