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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFZ48VS

Name: IRFZ48VS
Brand: Infineon Technologies
SKU: IRFZ48VS
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ48VS

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFZ48VS.pdf

Description:: MOSFET N-CH 60V 72A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFZ48VS from International Rectifier is a 60V, 72A N-channel D2Pak surface-mount HEXFET® Power MOSFET with 12 mΩ R_DS(on) at V_GS = 10 V, 175°C maximum junction temperature, and full avalanche rating. It serves as a high-current switching element in DC-DC converters, motor drives, and uninterruptible power supplies where low conduction loss and rugged transient handling are required.

For engineers reviewing the IRFZ48VS datasheet, IRFZ48VS pinout, IRFZ48VS application, or IRFZ48VS equivalent, key selection criteria include its 12 mΩ on-resistance, 290 A pulsed drain current capability, 166 mJ single-pulse avalanche energy, D2Pak thermal performance (R_θJC = 1.0°C/W), and optimized gate charge profile for SMPS efficiency.

Technical Context

The IRFZ48VS employs advanced planar HEXFET processing to achieve ultra-low R_DS(on) per die area while maintaining fast switching (t_r = 200 ns, t_f = 166 ns) and robust dv/dt immunity (5.3 V/ns). Its body diode exhibits 70–100 ns reverse recovery time and 155–233 nC Q_rr, enabling reliable operation in hard-switched topologies.

Thermally, it supports continuous operation up to 175°C junction temperature with linear derating (1.0 W/°C above 25°C case temperature) and delivers 150 W power dissipation at T_C = 25°C. The D2Pak package provides low-inductance source/drain paths and direct heatsink mounting via M3 screw (1.1 N·m torque).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in buck, flyback, and half-bridge designs.
R_DS(on)	12 mΩ @ V_GS = 10 V, I_D = 43 A - Enables <1.5 W conduction loss at 72 A DC, critical for high-efficiency SMPS and motor phase switches.
I_D (T_C = 25°C)	72 A - Continuous drain current rating under ideal heatsinking; defines peak steady-state load capacity in power stages.
E_AS	166 mJ - Single-pulse avalanche energy; allows safe operation during inductive turn-off transients without external snubbers.
Q_g	110 nC - Total gate charge; determines driver strength requirement and switching loss trade-off in 100–500 kHz SMPS applications.
R_θJC	1.0 °C/W - Junction-to-case thermal resistance; enables precise thermal design when mounted to heatsink with greased interface.
t_r/t_f	200/166 ns - Rise/fall times at I_D = 72 A, V_DD = 30 V; supports fast switching with controlled EMI in compact power modules.

Pinout & Package

The IRFZ48VS is housed in a surface-mount D2Pak (TO-263) package with three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The exposed drain tab provides low-inductance, high-current path and serves as primary thermal interface to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path	Electrically and thermally connected to PCB copper pour or heatsink; carries full load current and dissipates >95% of heat.
Source (Pin 1)	Reference node for gate drive and current sensing	Low-inductance connection point for gate driver return and shunt resistor; internal source bond wires minimize L_S.
Gate (Pin 2)	Control terminal for channel modulation	High-impedance input requiring 10 V for full enhancement; Miller charge (Q_gd = 36 nC) dominates turn-off timing.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	12 mΩ enables <1.5 W conduction loss at 72 A, reducing heatsink size and improving system efficiency in 12–48 V industrial power stages.
Full avalanche rating	166 mJ single-pulse and 15 mJ repetitive avalanche energy allow reliable operation under unclamped inductive switching without external protection.
175°C operating temperature	Extended junction rating permits use in sealed enclosures or high-ambient environments (e.g., motor control cabinets, UPS systems) without derating.
Optimized for SMPS	Low Q_g/Q_gd ratio (110/36 nC) and fast switching reduce driver losses and enable stable 300–500 kHz operation in LLC and synchronous rectifier designs.

Applications

DC-DC Converters

Motor Drives

Use Scenario: High-current synchronous buck converter in telecom power shelf delivering 48 V @ 60 A.

IC Role / Device Role / Timing Role: Primary high-side switch handling full input current with minimal conduction loss and fast turn-on to reduce dead-time losses.

Use Value: 12 mΩ R_DS(on) cuts conduction loss by 35% vs. comparable 20 mΩ MOSFETs, directly improving full-load efficiency from 92.1% to 93.4%.

Use Scenario: Three-phase inverter stage for 1 kW BLDC motor in HVAC compressor.

IC Role / Device Role / Timing Role: Low-side switching device in each leg, commutating motor phase current with low V_SD forward drop and fast body-diode recovery.

Use Value: 70–100 ns t_rr and 155–233 nC Q_rr minimize shoot-through risk and reduce diode conduction loss during PWM dead time.

Uninterruptible Power Supplies

Industrial Lighting Ballasts

Use Scenario: Inverter output stage in 1 kVA online UPS converting 380 V DC bus to 230 V AC.

IC Role / Device Role / Timing Role: Half-bridge switch subjected to repetitive inductive turn-off stress and line-voltage transients.

Use Value: 15 mJ repetitive avalanche energy ensures long-term reliability during grid-spike events without snubber circuitry or derating.

Use Scenario: High-frequency resonant ballast driving 250 W HID lamp in factory lighting fixture.

IC Role / Device Role / Timing Role: Resonant tank switch operating at 250 kHz with high dv/dt stress across drain-source during zero-voltage switching transitions.

Use Value: 5.3 V/ns peak diode recovery dv/dt rating prevents false turn-on and ensures stable ZVS operation over full temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF75	75 V V_DSS, 75 A I_D, 10.5 mΩ R_DS(on), TO-220 package	Larger footprint, higher R_θJA (62°C/W), no integrated avalanche rating	Preferred for cost-sensitive through-hole designs where thermal margin exists and avalanche robustness is secondary.
IXTH72N10L2	100 V V_DSS, 72 A I_D, 11.5 mΩ R_DS(on), TO-247 package	Higher voltage rating, larger package, 2× higher Q_g (220 nC), slower switching	Chosen when 100 V bus tolerance is required or when TO-247 mechanical retention is mandated in high-vibration environments.

Compared with STP75NF75 and IXTH72N10L2, the IRFZ48VS offers optimal balance of D2Pak surface-mount compatibility, 60 V/72 A rating, 12 mΩ on-resistance, and certified avalanche ruggedness-making it uniquely suited for space-constrained, high-reliability industrial SMPS and motor control modules.

Availability

IRFZ48VS is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, uninterruptible power supplies, and industrial lighting ballasts requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFZ48VS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) was a pioneer in power semiconductor innovation, specializing in high-efficiency MOSFETs, IGBTs, and driver ICs for industrial, automotive, and computing markets.

The HEXFET® Power MOSFET product line-including the IRFZ48VS-was engineered specifically for high-current, high-reliability switching applications demanding low R_DS(on), fast switching, and rugged avalanche performance in compact surface-mount packages.

FAQ

What is the maximum continuous drain current for IRFZ48VS at 100°C case temperature?

The IRFZ48VS supports 51 A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat transfer efficiency at elevated case temperatures and must be validated against actual board layout, heatsink interface, and ambient conditions.

Does IRFZ48VS require a gate resistor for safe operation?

Yes-a gate resistor (typically 5–22 Ω) is required to control dV/dt and prevent oscillation during switching. The datasheet specifies t_d(on), t_r, t_d(off), and t_f using R_G = 9.1 Ω; omitting this resistor risks gate ringing, shoot-through, and accelerated gate oxide degradation.

Can IRFZ48VS be used in linear (analog) mode operation?

No-it is not characterized or rated for linear-mode operation. Its Safe Operating Area (SOA) curve shows limited capability beyond 10 µs pulse width at high V_DS, and prolonged operation in the linear region risks thermal runaway due to positive temperature coefficient of R_DS(on).

Is the D2Pak package of IRFZ48VS RoHS-compliant?

Yes-the IRFZ48VS manufactured after 2006 complies with EU RoHS Directive 2011/65/EU. Lead-free soldering is supported at 300°C for 10 seconds (1.6 mm from case), and the device carries appropriate marking per IPC/JEDEC J-STD-609.

IRFZ48VS Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 72A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 43A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1985 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFZ48VS FAQ

1.How can I place an order for IRFZ48VS through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ48VS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ48VS reliable?

The price and inventory of IRFZ48VS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ48VS is usually 5 days.

3.What payment methods are accepted for IRFZ48VS?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ48VS transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ48VS?

IRFZ48VS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ48VS order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ48VS?

For technical support, including IRFZ48VS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ48VS requirements.

6.How does Aetrix verify that IRFZ48VS is sourced from the original manufacturer or authorized distributors?

All IRFZ48VS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ48VS meets industry standards.

7.What is the process for return or replacement of IRFZ48VS?

All IRFZ48VS units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ48VS, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ48VS part is unused and in its original packaging.

Return procedure for IRFZ48VS:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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