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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLI540N

Name: IRLI540N
Brand: Infineon Technologies
SKU: IRLI540N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLI540N

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IRLI540N.pdf

Description:: MOSFET N-CH 100V 23A TO220AB FP

Quantity:: RFQ Add To RFQ list

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Inventory:6,533

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Product details

Overview

IRLI540N from Infineon Technologies (formerly International Rectifier) is a 100V, 23A N-channel enhancement-mode Power MOSFET in TO-220 Full-Pak package, featuring R_DS(on) = 0.044 Ω @ V_GS = 10V, 12A, and fully avalanche-rated operation. It integrates an intrinsic body diode with t_rr = 190–290 ns and V_SD = 1.3 V @ I_S = 18A, and is optimized for high-efficiency DC-DC converters, motor drives, and industrial power switching where thermal isolation and rugged pulsed operation are critical.

For engineers reviewing the IRLI540N datasheet, IRLI540N pinout, IRLI540N application, or IRLI540N equivalent, key selection criteria include its isolated TO-220 Full-Pak construction (2.5 kV_RMS isolation, 4.8 mm creepage), logic-level gate drive capability (V_GS(th) = 1.0–2.0 V), and validated unclamped inductive switching performance (E_AS = 310 mJ, I_AR = 18 A).

Technical Context

This HEXFET® device employs fifth-generation silicon processing to minimize conduction loss while maintaining fast switching (t_d(on) = 11 ns, t_r = 81 ns, Q_g = 74 nC) and robust safe operating area (SOA) up to 100 V and 23 A at T_C = 25°C. Its isolated package eliminates external insulation hardware in commercial-industrial designs.

The integrated body diode supports synchronous rectification and freewheeling functions, with characterized reverse recovery (Q_rr = 1.1–1.7 µC, di/dt = 100 A/µs) and dv/dt immunity (5.0 V/ns). Thermal resistance is specified as R_θJC = 2.8 °C/W and R_θJA = 65 °C/W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche onset; enables use in 48V bus and 100V DC-link applications.
R_DS(on)	0.044 Ω @ V_GS = 10V, I_D = 12A - Low conduction loss yields <1W dissipation at 12A continuous, reducing heatsink requirements.
I_D (T_C = 25°C)	23 A - Continuous drain current rating at case temperature 25°C; derates linearly by 0.36 W/°C above 25°C.
E_AS	310 mJ - Single-pulse avalanche energy; ensures reliability under inductive turn-off transients without external snubbers.
Q_g	74 nC - Total gate charge; determines driver strength requirement and switching loss trade-off in hard-switched topologies.
t_rr	190–290 ns - Body diode reverse recovery time; impacts commutation loss and EMI in bridge configurations.
R_θJC	2.8 °C/W - Junction-to-case thermal resistance; enables direct mounting to heatsinks with predictable thermal path.

Pinout & Package

IRLI540N uses the TO-220 Full-Pak package: insulated plastic housing with electrically isolated metal tab (2.5 kV_RMS isolation, 4.8 mm creepage), single-screw or clip mounting, and low thermal resistance to heatsink. The tab is internally connected to the Drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Logic-compatible input (V_GS(th) = 1.0–2.0 V); requires ≤74 nC charge for full enhancement.
D (Drain)	Main power output / high-side switch node	Internally bonded to isolated metal tab; serves as primary heat transfer path and high-voltage switching node.
S (Source)	Power return / reference node	Low-impedance source connection; forms common reference for gate drive and current sensing in low-side configurations.

Key Features

Feature	Design Value
Isolated TO-220 Full-Pak	Eliminates need for mica washers or insulating sleeves in heatsink mounting; provides 2.5 kV_RMS isolation and 4.8 mm creepage.
Fully Avalanche Rated	Guaranteed operation under unclamped inductive switching (E_AS = 310 mJ, I_AR = 18 A) without degradation.
Logic-Level Gate Drive	Turns on fully at V_GS ≥ 4.0 V (R_DS(on) = 0.063 Ω @ I_D = 10A), compatible with 3.3V/5V microcontrollers.
Low Q_gd/Q_g Ratio	Q_gd = 38 nC of total Q_g = 74 nC - improves hard-switching efficiency and reduces Miller-induced shoot-through risk.

Applications

Motor Drive Inverter

DC-DC Synchronous Buck Converter

Use Scenario: Half-bridge or 3-phase inverter stage driving brushed/BLDC motors in industrial automation systems.

IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off (t_f = 62 ns) and controlled body diode recovery to minimize cross-conduction loss.

Use Value: Enables 20 kHz PWM operation with <1.5 W conduction loss at 15 A, reducing thermal stress in compact enclosures.

Use Scenario: High-current step-down regulator supplying FPGA or ASIC core voltage from 12V or 48V input.

IC Role / Device Role / Timing Role: Synchronous rectifier with low R_DS(on) and characterized Q_rr, replacing Schottky diodes to improve efficiency above 10 A.

Use Value: Delivers >94% efficiency at 20 A output due to 0.044 Ω on-resistance and 1.3 V forward drop in body diode.

Uninterruptible Power Supply (UPS)

Industrial AC-DC Front-End

Use Scenario: Battery backup inverter stage converting 48V DC to 120/230V AC via H-bridge topology.

IC Role / Device Role / Timing Role: High-reliability switching device handling repetitive avalanche events during load dump or short-circuit faults.

Use Value: Survives 310 mJ single-pulse and 5.4 mJ repetitive avalanche energy without parameter shift, extending field lifetime.

Use Scenario: Active PFC boost switch or output rectifier in telecom rectifiers and server PSUs.

IC Role / Device Role / Timing Role: Main power switch with high V_DSS margin and low C_oss (350 pF) to reduce switching loss at 100–300 kHz.

Use Value: Supports ZVS-assisted soft switching with minimal capacitive loss, enabling >96% PFC stage efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540N	Same die but non-isolated TO-220AB package; R_DS(on) = 0.044 Ω, but no 2.5 kV_RMS isolation or creepage.	Requires external insulation hardware; unsuitable for safety-critical or high-isolation industrial designs.	Select when cost sensitivity outweighs isolation needs and heatsink mounting permits standard TO-220 insulation.
STP10NK60ZFP	600V superjunction MOSFET; R_DS(on) = 0.65 Ω, higher voltage rating but significantly higher conduction loss at 23A.	Targeted at high-voltage flyback/PFC, not 100V motor drive or buck conversion.	Choose only if system requires >400V blocking; avoid for 100V applications due to excessive I²R loss.

Compared with IRF540N, IRLI540N trades package cost for elimination of insulating hardware and enhanced safety compliance; versus STP10NK60ZFP, it delivers 15× lower R_DS(on) and proven suitability in 100V industrial switching, making it optimal for thermally constrained, safety-certified designs.

Availability

IRLI540N is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and industrial DC-DC converters requiring stable component supply and long-term lifecycle support.

Supply support for IRLI540N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices.

The IRLI540N belongs to Infineon's legacy HEXFET® Power MOSFET product line, designed specifically for high-reliability, high-current switching in commercial and industrial power systems where thermal isolation, avalanche ruggedness, and logic-level drive are essential.

FAQ

Is the IRLI540N RoHS-compliant and lead-free?

Yes, the "PbF" suffix in IRLI540NPbF explicitly denotes lead-free and RoHS-compliant construction. The device meets EU Directive 2011/65/EU and uses matte tin plating on leads. No exemptions apply, and full material declarations are available through Infineon's compliance portal.

Can the IRLI540N be used in surface-mount assemblies?

No - the TO-220 Full-Pak package is explicitly not recommended for surface-mount applications per Infineon's package documentation. It is designed for through-hole mounting with mechanical screw or clip attachment to a heatsink. Reflow soldering will damage the internal isolation structure and void warranty.

What is the maximum allowable gate-source voltage for reliable operation?

The absolute maximum V_GS is ±16 V. Operation beyond this risks permanent gate oxide damage. For robust design, gate drive should be clamped to +12 V / –5 V using Zener diodes or dedicated gate drivers, especially in noisy industrial environments where ringing may exceed ratings.

Does the IRLI540N require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For typical 12V gate drive and 20 kHz switching, a 5 Ω series resistor is recommended (per datasheet test condition for t_d(off)). Lower values increase switching speed but raise EMI risk; higher values reduce losses but increase switching time and heat generation.

IRLI540N Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 44mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 74 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 1800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 54W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-FP

IRLI540N FAQ

1.How can I place an order for IRLI540N through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLI540N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLI540N reliable?

The price and inventory of IRLI540N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLI540N is usually 5 days.

3.What payment methods are accepted for IRLI540N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLI540N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLI540N?

IRLI540N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLI540N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLI540N?

For technical support, including IRLI540N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLI540N requirements.

6.How does Aetrix verify that IRLI540N is sourced from the original manufacturer or authorized distributors?

All IRLI540N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLI540N meets industry standards.

7.What is the process for return or replacement of IRLI540N?

All IRLI540N units undergo pre-shipment inspection (PSI). If there is an issue with IRLI540N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLI540N part is unused and in its original packaging.

Return procedure for IRLI540N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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