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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRL3103D1PBF MOSFET N-CH 30V 64A TO220AB Infineon Technologies	8,687	RFQ	Datasheet	FETKY™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	64A (Tc)	4.5V, 10V	14mOhm @ 34A, 10V	1V @ 250µA	43 nC @ 4.5 V	±16V	1900 pF @ 25 V	-	2W (Ta), 89W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
SPP20N60C3HKSA1 MOSFET N-CH 600V 20.7A TO220-3 Infineon Technologies	7,627	RFQ	Datasheet	CoolMOS™	TO-220-3	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	20.7A (Tc)	10V	190mOhm @ 13.1A, 10V	3.9V @ 1mA	114 nC @ 10 V	±20V	2400 pF @ 25 V	-	208W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-1
SPI20N60C3HKSA1 MOSFET N-CH 600V 20.7A TO262-3 Infineon Technologies	6,853	RFQ	Datasheet	CoolMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	20.7A (Tc)	10V	190mOhm @ 13.1A, 10V	3.9V @ 1mA	114 nC @ 10 V	±20V	2400 pF @ 25 V	-	208W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO262-3-1
GS61004B-TR GS61004B-TR Infineon Technologies Canada Inc.	9,385	RFQ	-	-	3-SMD, No Lead	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	45A (Tc)	6V	20mOhm @ 13.5A, 6V	1.3V @ 7mA	6.2 nC @ 6 V	+7V, -10V	295 pF @ 50 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	-
IPB180P04P403ATMA1 MOSFET P-CH 40V 180A TO263-7 Infineon Technologies	2,932	RFQ	Datasheet	OptiMOS™	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	40 V	180A (Tc)	10V	2.8mOhm @ 100A, 10V	4V @ 410µA	250 nC @ 10 V	±20V	17640 pF @ 25 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO263-7-3
IRFB7430GPBF MOSFET N CH 40V 195A TO220AB Infineon Technologies	2,416	RFQ	Datasheet	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	195A (Tc)	6V, 10V	1.3mOhm @ 100A, 10V	3.9V @ 250µA	460 nC @ 10 V	±20V	14240 pF @ 25 V	-	-	-	-	-	Through Hole	TO-220AB
IRLR8103 MOSFET N-CH 30V 89A D-PAK Infineon Technologies	5,353	RFQ	Datasheet	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	89A (Ta)	4.5V, 10V	7mOhm @ 15A, 10V	2V @ 250µA (Min)	50 nC @ 5 V	±20V	-	-	89W (Ta)	-	-	-	Surface Mount	TO-252AA (DPAK)
SPD30P06P MOSFET P-CH 60V 30A TO252-3 Infineon Technologies	9,519	RFQ	Datasheet	SIPMOS®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	60 V	30A (Tc)	10V	75mOhm @ 21.5A, 10V	4V @ 1.7mA	48 nC @ 10 V	±20V	1535 pF @ 25 V	-	125W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO252-3
IRF640NLPBF MOSFET N-CH 200V 18A TO262 Infineon Technologies	5,537	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	18A (Tc)	10V	150mOhm @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	1160 pF @ 25 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IPB035N12NM6ATMA1 TRENCH >=100V Infineon Technologies	7,037	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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