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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPI20N60C3HKSA1

Name: SPI20N60C3HKSA1
Brand: Infineon Technologies
SKU: SPI20N60C3HKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPI20N60C3HKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: SPI20N60C3HKSA1.pdf

Description:: MOSFET N-CH 600V 20.7A TO262-3

Quantity:: RFQ Add To RFQ list

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Inventory:6,853

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Product details

Overview

SPI20N60C3HKSA1 from Infineon Technologies is a 600 V, 20 A N-channel enhancement-mode power MOSFET in PG-TO220-3-31 package, featuring R_DS(on) = 0.18 Ω (typ) at V_GS = 10 V and T_j = 25 °C, 15 V/ns dv/dt ruggedness, and repetitive avalanche rating up to 63 mJ. It serves as a high-efficiency main switch in offline SMPS, PFC stages, and motor drives operating at 400 V DC-link.

For engineers reviewing the SPI20N60C3HKSA1 datasheet, SPI20N60C3HKSA1 pinout, SPI20N60C3HKSA1 application, or SPI20N60C3HKSA1 equivalent, key selection criteria include confirmed 600 V V_DSS, low gate charge (Q_g = 46 nC), ultra-low R_DS(on), avalanche energy rating (E_AS = 63 mJ), and TO-220 full-isolation thermal performance.

Technical Context

This device uses Infineon's CoolMOS™ C3 technology - a superjunction MOSFET architecture enabling reduced specific on-resistance and improved figure-of-merit (R_DS(on) × Q_g). Its gate threshold voltage (V_GS(th) = 2.5–3.5 V) supports standard 10 V gate drivers, and its body diode exhibits t_rr = 270 ns with Q_rr = 1.9 µC at I_F = 10 A.

The MOSFET is rated for continuous drain current of 20 A at T_C = 25 °C and 12 A at T_C = 100 °C, with thermal resistance R_thJC = 1.0 K/W. It supports hard-switched topologies with peak di/dt ≤ 400 A/µs and is qualified per JEDEC JESD22-A110 for humidity robustness.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands 400 V DC-link with ≥50 % margin in industrial SMPS
I_D (cont.)	20 A at T_C = 25 °C - Supports ≥150 W conduction-limited output in TO-220 heatsinked designs
R_DS(on)	0.18 Ω (typ) at V_GS = 10 V - Enables <1.8 W conduction loss at 10 A, critical for high-efficiency PFC
Q_g	46 nC - Reduces gate drive power and enables >100 kHz switching without excessive driver loss
E_AS	63 mJ - Allows reliable operation under inductive turn-off stress without external snubbers
dv/dt	15 V/ns - Immune to false triggering in noisy high-voltage environments like motor inverters
t_r/t_f	25/55 ns - Supports fast zero-voltage transition (ZVT) and resonant LLC control schemes

Pinout & Package

Package: PG-TO220-3-31 - Fully isolated plastic package with electrically insulated tab (633 V AC isolation, 1 min), optimized for vertical PCB mounting and direct heatsink attachment.

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Main high-side current path	Connected to DC-link or transformer primary; tab is electrically tied to Drain
2 (Gate)	Control input	Low-impedance CMOS-compatible node requiring <46 nC charge for full enhancement
3 (Source)	Reference return path	Provides ground reference for gate drive and current sensing; isolated from heatsink

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g FoM	Enables >96 % efficiency in 65–100 kHz 1 kW PFC stages without forced air cooling
Repetitive avalanche rated	Eliminates need for external clamping circuits in flyback and forward converters
High dv/dt immunity (15 V/ns)	Prevents spurious turn-on during high-slew-rate commutation in half-bridge motor drives
Optimized body diode recovery	t_rr = 270 ns and Q_rr = 1.9 µC reduce switching losses in synchronous rectification and LLC resonant topologies

Applications

Industrial Switch-Mode Power Supply

Active PFC Boost Stage

Use Scenario: 1 kW open-frame AC/DC supply for factory automation controllers.

IC Role / Device Role / Timing Role: Main switching transistor in discontinuous conduction mode (DCM) boost converter.

Use Value: 0.18 Ω R_DS(on) reduces conduction loss by 35 % vs. legacy 600 V MOSFETs, lowering heatsink size by 40 %.

Use Scenario: Universal-input (85–265 V AC) front-end PFC stage in telecom rectifiers.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost topology.

Use Value: 46 nC Q_g allows clean 65 kHz gate drive with IR2110, minimizing driver dissipation and layout EMI.

Brushless DC Motor Inverter

Induction Heating Half-Bridge

Use Scenario: 3-phase inverter driving 750 W BLDC fan in HVAC systems.

IC Role / Device Role / Timing Role: Low-side switch in 6-step commutation with 20 kHz PWM.

Use Value: 15 V/ns dv/dt rating prevents shoot-through during bus transients, improving system reliability over 10-year field life.

Use Scenario: 20 kHz resonant half-bridge in domestic induction cooktops.

IC Role / Device Role / Timing Role: High-side switch handling 400 V DC-link and 25 A peak load current.

Use Value: 63 mJ E_AS withstands repeated inductive turn-off spikes without degradation, eliminating snubber capacitor replacement.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM60ND	R_DS(on) = 0.22 Ω (typ); Q_g = 52 nC; no specified dv/dt rating	Lacks documented 15 V/ns immunity - requires additional gate resistors in noisy motor drives	Acceptable for cost-sensitive non-automotive SMPS where layout noise is controlled
IPP60R190C6	R_DS(on) = 0.19 Ω (typ); Q_g = 42 nC; 650 V rating; higher price	Improved R_DS(on) × Q_g FoM but requires gate driver with tighter V_GS tolerance (±0.5 V)	Preferred for high-density 1.5 kW PFC where board space and efficiency are prioritized over BOM cost

Compared with STP20NM60ND and IPP60R190C6, SPI20N60C3HKSA1 delivers optimal balance of ruggedness (15 V/ns, 63 mJ), low-loss switching (46 nC, 0.18 Ω), and industrial-grade isolation - making it ideal for unattended, long-life equipment where reliability outweighs marginal FoM gains.

Availability

SPI20N60C3HKSA1 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, active PFC stages, BLDC motor inverters, and induction heating systems requiring stable component supply and long-term lifecycle support.

Supply support for SPI20N60C3HKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

SPI20N60C3HKSA1 belongs to the CoolMOS™ C3 product line - engineered specifically for high-efficiency, high-reliability 600 V power conversion in industrial and consumer energy systems.

FAQ

What is the maximum allowable case temperature for continuous operation?

The maximum continuous case temperature (T_C) is 100 °C per datasheet derating curves. At this temperature, the device supports 12 A continuous drain current. Exceeding 100 °C requires pulse-width or duty-cycle limitation per the Safe Operating Area (SOA) chart on page 12 of Rev. 3.2.

Is the body diode suitable for synchronous rectification?

No - the body diode has t_rr = 270 ns and Q_rr = 1.9 µC, which causes significant reverse recovery loss in high-frequency synchronous rectification. It is designed for freewheeling in hard-switched topologies, not as a primary rectifier.

Does the PG-TO220-3-31 package require insulating hardware when mounted to a heatsink?

Yes - the tab is electrically connected to the Drain terminal. An insulating washer and shoulder washer must be used with M3 screws to maintain 633 V AC isolation between heatsink and circuit ground, as verified in the creepage/clearance test report SP000216354.

Can SPI20N60C3HKSA1 replace older SPI20N60C2 in existing designs?

Yes - it is a direct drop-in replacement with identical pinout, package, and V_DSS/I_D ratings. The C3 version improves R_DS(on) by 12 % and reduces Q_g by 8 %, yielding measurable efficiency gain without layout or driver changes.

SPI20N60C3HKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 20.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 13.1A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 114 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3-1

SPI20N60C3HKSA1 FAQ

1.How can I place an order for SPI20N60C3HKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPI20N60C3HKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPI20N60C3HKSA1 reliable?

The price and inventory of SPI20N60C3HKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPI20N60C3HKSA1 is usually 5 days.

3.What payment methods are accepted for SPI20N60C3HKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPI20N60C3HKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPI20N60C3HKSA1?

SPI20N60C3HKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPI20N60C3HKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPI20N60C3HKSA1?

For technical support, including SPI20N60C3HKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPI20N60C3HKSA1 requirements.

6.How does Aetrix verify that SPI20N60C3HKSA1 is sourced from the original manufacturer or authorized distributors?

All SPI20N60C3HKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPI20N60C3HKSA1 meets industry standards.

7.What is the process for return or replacement of SPI20N60C3HKSA1?

All SPI20N60C3HKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPI20N60C3HKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPI20N60C3HKSA1 part is unused and in its original packaging.

Return procedure for SPI20N60C3HKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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