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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB7430GPBF

Name: IRFB7430GPBF
Brand: Infineon Technologies
SKU: IRFB7430GPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB7430GPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB7430GPBF.pdf

Description:: MOSFET N CH 40V 195A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:2,416

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Product details

Overview

IRFB7430GPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-220 package, rated for 40V V_DS, 110A I_D (continuous), and 3.0mΩ R_DS(on) at V_GS = 10V. It serves as a high-current synchronous rectifier or primary-side switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRFB7430GPBF datasheet, IRFB7430GPBF pinout, IRFB7430GPBF application, or IRFB7430GPBF equivalent, key selection criteria include low on-resistance at 10V gate drive, robust avalanche energy rating (E_AS = 590mJ), and thermal performance in forced-air-cooled 12V/24V industrial power stages.

Technical Context

This Generation 3 HEXFET device uses planar silicon process with optimized cell pitch and trench-assisted source metallization to achieve low R_DS(on) × Q_g figure-of-merit (180Ω·nC). Its threshold voltage V_GS(th) ranges 2.0–4.0V, supporting standard 5V or 10V gate drivers without level-shifting.

The MOSFET features fully rated avalanche capability per JEDEC JESD24-1, specified for repetitive unclamped inductive switching (UIS) up to 590mJ at T_J = 25°C. Its SOA curve supports linear-mode operation up to 100V/10A with derating above 25°C ambient.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40V - Maximum drain-source blocking voltage; suitable for 12V/24V bus systems with 2× safety margin.
R_DS(on) @ V_GS=10V	3.0mΩ - Enables <1.2W conduction loss at 20A, reducing heatsink requirements in high-current SMPS.
I_D (continuous)	110A - Rated at T_C = 25°C; usable up to 75A at T_C = 100°C per SOA limits.
Q_g	120nC - Total gate charge determines driver current requirement; compatible with common 1A peak gate drivers.
E_AS	590mJ - Avalanche energy rating enables reliable operation during inductive turn-off transients in motor control.
T_J max	175°C - Maximum junction temperature allows operation in sealed enclosures with limited airflow.

Pinout & Package

TO-220AB package (3-pin, straight lead, full-pack variant with isolated tab). Mounting surface is electrically connected to drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	Electrically tied to metal tab; requires insulating washer when mounted to heatsink.
Source	Reference node for gate drive and current return	Low-inductance connection critical for minimizing switching oscillation in high-dI/dt applications.
Gate	Control electrode for channel formation	High-impedance input; requires 10V drive for full enhancement; susceptible to ESD damage if unprotected.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	3.0mΩ at 10V gate drive enables >95% efficiency in 12V input buck converters at 50A output.
100% UIS tested	Every unit validated for 590mJ unclamped inductive switching, ensuring field reliability in motor drive fault conditions.
Enhanced body diode recovery	Q_rr = 240nC with soft recovery reduces EMI and cross-conduction risk in synchronous rectification.
Lead-free and RoHS compliant	Meets IPC-J-STD-609A Class 1 moisture sensitivity; compatible with lead-free reflow profiles up to 260°C peak.

Applications

DC-DC Buck Converter

Brushless DC Motor Inverter

Use Scenario: 12V-to-1.2V VRM for FPGA power delivery with 60A output.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 500kHz PWM frequency.

Use Value: 3.0mΩ R_DS(on) cuts conduction loss by 40% vs. legacy 5mΩ MOSFETs, reducing thermal stress on PCB copper planes.

Use Scenario: 24V three-phase BLDC drive for industrial fans with 30A phase current.

IC Role / Device Role / Timing Role: Low-side switching element in six-step commutation, driven by gate driver IC.

Use Value: 110A continuous rating supports 2× peak current surges during startup without thermal shutdown.

Automotive Body Control Module

Industrial Solenoid Driver

Use Scenario: 12V load switch for headlight LED arrays with PWM dimming.

IC Role / Device Role / Timing Role: High-side power switch controlled via microcontroller GPIO with external level shifter.

Use Value: 40V V_DS withstands automotive load-dump transients up to 35V, eliminating need for external TVS clamping.

Use Scenario: 24V solenoid actuator interface in factory automation PLC output stage.

IC Role / Device Role / Timing Role: Inductive load switch with integrated freewheeling path via body diode.

Use Value: 590mJ E_AS rating safely absorbs energy from 1.5H solenoid de-energization without snubber circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N4F6	R_DS(on) = 3.2mΩ @ 10V; Q_g = 135nC; same TO-220 package	Slightly higher gate charge increases driver losses at >300kHz switching	Preferred where STMicroelectronics supply chain alignment is required
IXTH110N40L2	R_DS(on) = 3.4mΩ @ 10V; V_GS(th) = 2.5–3.5V; TO-247 package	Larger footprint and higher thermal resistance require larger heatsink	Chosen when higher avalanche ruggedness (E_AS = 1.1J) justifies mechanical redesign

Compared with STP110N4F6 and IXTH110N40L2, IRFB7430GPBF offers the lowest R_DS(on) and best gate charge trade-off in TO-220, enabling compact 12V/24V power stages without sacrificing UIS robustness or thermal margin.

Availability

IRFB7430GPBF is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, automotive body electronics, and industrial solenoid control requiring stable component supply across multi-year production cycles.

Supply support for IRFB7430GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

The IRFB7430GPBF belongs to the HEXFET Generation 3 power MOSFET product line, engineered for high-efficiency, high-reliability switching in 12V–48V industrial and transportation power systems.

FAQ

What is the maximum safe operating temperature for IRFB7430GPBF?

The absolute maximum junction temperature is 175°C. Derating begins at T_C = 25°C: continuous current drops linearly to 75A at T_C = 100°C. Thermal resistance R_θJC is 0.45°C/W, so a 1.5°C/W heatsink with 1.5W conduction loss yields T_J ≈ 110°C at 25°C ambient.

Can IRFB7430GPBF be used in linear (analog) mode?

Yes - its SOA curve explicitly covers linear operation up to 100V × 10A at T_C = 25°C with 10ms pulse width. For sustained analog use, limit power dissipation to ≤30W with active cooling and ensure gate drive remains within ±20V to prevent oxide breakdown.

Does IRFB7430GPBF require a gate resistor for EMI suppression?

A 10–22Ω series gate resistor is recommended to dampen ringing caused by parasitic L_g/C_iss resonance. Values above 47Ω increase switching time and conduction loss; below 5Ω risks overshoot exceeding ±20V gate rating during fast edge transitions.

Is the TO-220 tab of IRFB7430GPBF electrically isolated?

No - the metal tab is internally connected to the drain terminal. Electrical isolation requires a mica or ceramic washer plus shoulder washer, and thermal interface material must be non-conductive to avoid shorting the drain to heatsink ground.

IRFB7430GPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 460 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 14240 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB7430GPBF FAQ

1.How can I place an order for IRFB7430GPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB7430GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB7430GPBF reliable?

The price and inventory of IRFB7430GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB7430GPBF is usually 5 days.

3.What payment methods are accepted for IRFB7430GPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB7430GPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB7430GPBF?

IRFB7430GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB7430GPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB7430GPBF?

For technical support, including IRFB7430GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB7430GPBF requirements.

6.How does Aetrix verify that IRFB7430GPBF is sourced from the original manufacturer or authorized distributors?

All IRFB7430GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB7430GPBF meets industry standards.

7.What is the process for return or replacement of IRFB7430GPBF?

All IRFB7430GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB7430GPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB7430GPBF part is unused and in its original packaging.

Return procedure for IRFB7430GPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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