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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPD30P06P

Name: SPD30P06P
Brand: Infineon Technologies
SKU: SPD30P06P
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPD30P06P

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SPD30P06P.pdf

Description:: MOSFET P-CH 60V 30A TO252-3

Quantity:: RFQ Add To RFQ list

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Inventory:9,519

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Product details

Overview

SPD30P06P from Infineon Technologies is a P-channel enhancement-mode SIPMOS™ power MOSFET rated for -60 V drain-source voltage, 0.075 Ω R_DS(on) at -10 V V_GS, and -30 A continuous drain current at T_C = 25 °C. It features avalanche rating, dv/dt ruggedness, and 175 °C maximum junction temperature, deployed in high-reliability DC-DC converter high-side switches and motor control H-bridge legs.

For engineers reviewing the SPD30P06P datasheet, SPD30P06P pinout, SPD30P06P application, or SPD30P06P equivalent, key selection criteria include its P-TO252 package thermal resistance (R_thJC = 1.2 K/W), gate charge profile (Q_g = 32–48 nC), reverse diode forward voltage (V_SD = -1.3 to -1.7 V), and safe operating area under repetitive pulsed conditions.

Technical Context

This device operates as a normally-off P-channel switch requiring negative gate drive relative to source. Its avalanche-rated structure supports unclamped inductive switching in motor drives and power supplies without external snubbers. The 175 °C T_jmax enables operation in thermally constrained industrial enclosures.

Dynamic performance is defined by low output capacitance (C_oss = 387–484 pF) and fast switching (t_r = 25.2–37.8 ns, t_f = 14.6–21.9 ns) under 3.3 Ω gate resistance. Gate threshold voltage (V_GS(th) = -2.1 to -4 V) ensures stable turn-on margin across temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum blocking voltage for high-side switching in 48 V automotive and industrial bus systems
R_DS(on)	0.075 Ω max at V_GS = -10 V, I_D = -21.5 A - Enables ≤1.7 W conduction loss at full rated current
I_D (cont)	-30 A at T_C = 25 °C - Supports high-current load switching with external heatsinking
E_AS	250 mJ single-pulse - Withstands energy from inductive kickback in relay/motor drive circuits
dv/dt	-6 kV/µs - Resists false triggering during fast voltage transients in noisy EMI environments
Q_g	32–48 nC - Determines gate driver power requirement and switching loss trade-off
V_SD	-1.3 to -1.7 V at \|I_F\| = \|I_S\| - Defines forward drop and power dissipation of integrated body diode

Pinout & Package

P-TO252 (DPAK) surface-mount package with exposed drain pad for thermal conduction. Standard 3-pin layout optimized for PCB copper area cooling (6 cm² recommended).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; requires negative voltage relative to source to turn on; sensitive to ESD
Pin 2	Drain	Main current path output; electrically connected to exposed metal pad for thermal and electrical sinking
Pin 3	Source	Reference node for gate drive and current return; ties to system ground or floating rail in high-side configuration

Key Features

Feature	Design Value
Avalanche rated	250 mJ single-pulse energy handling enables robust inductive load switching without external protection
175 °C T_jmax	Extended thermal operating range supports sealed enclosures and high ambient temperature industrial deployments
dv/dt ruggedness	-6 kV/µs immunity prevents spurious turn-on during fast transient events in motor drive inverters
P-Channel enhancement mode	Normally-off operation simplifies gate drive design in high-side configurations versus N-channel alternatives
Low R_DS(on) × Q_g product	Optimized switching-conduction trade-off for medium-frequency (<100 kHz) power conversion stages

Applications

Industrial Motor Control

Automotive Body Control

Use Scenario: H-bridge half-bridge leg in 24 V brushed DC motor drivers for HVAC actuators and seat adjusters.

IC Role / Device Role / Timing Role: High-side P-channel switch enabling bidirectional current flow with simplified gate drive topology.

Use Value: Eliminates need for bootstrap circuitry or level-shifting gate drivers, reducing BOM count and layout complexity.

Use Scenario: Load switch for interior lighting, window lift modules, and mirror controls in 12 V/24 V vehicle architectures.

IC Role / Device Role / Timing Role: Low-side or high-side power distribution switch with integrated avalanche protection.

Use Value: Withstands load dump and jump-start transients up to -60 V while maintaining SOA integrity.

DC-DC Converter

Power Supply OR-ing

Use Scenario: Synchronous rectifier or high-side switch in isolated flyback or forward converters for industrial PLC power rails.

IC Role / Device Role / Timing Role: Primary switching element controlling energy transfer into output stage with precise timing control.

Use Value: R_DS(on) < 0.075 Ω minimizes conduction loss at 20–30 A loads, improving efficiency above 92% at full load.

Use Scenario: Reverse-polarity and fault-isolation switch in redundant 48 V telecom or server power distribution units.

IC Role / Device Role / Timing Role: Bidirectional blocking switch ensuring current flows only from healthy supply in OR-ing configuration.

Use Value: Body diode V_SD ≤ -1.7 V and fast trr (64.6–97 ns) reduce reverse recovery losses during supply switchover.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PbF	R_DS(on) = 0.077 Ω (higher), Q_g = 65 nC (significantly higher), T_jmax = 175 °C same	Higher switching loss limits use to ≤50 kHz; less suitable for compact thermal designs	Prefer SPD30P06P where gate drive strength or thermal density is constrained
STP36PF06	R_DS(on) = 0.065 Ω (slightly lower), but no specified dv/dt rating and E_AS = 190 mJ (lower)	Lacks documented avalanche ruggedness; requires external clamping in inductive switching	Select SPD30P06P when unclamped inductive switching reliability is mandatory

Compared with IRF4905PbF and STP36PF06, SPD30P06P delivers superior gate charge efficiency and guaranteed dv/dt immunity-critical for noise-prone motor control and automotive environments-while maintaining competitive conduction loss and proven avalanche endurance.

Availability

SPD30P06P is available at Aetrix Electronics and suitable for industrial motor control, automotive body electronics, and DC-DC converter designs requiring stable component supply and long-term lifecycle support.

Supply support for SPD30P06P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.

The SIPMOS™ power transistor product line targets high-reliability industrial and automotive power switching applications, emphasizing ruggedness, thermal stability, and controlled dynamic behavior under real-world stress conditions.

FAQ

Is SPD30P06P suitable for high-side switching without a charge pump?

Yes. As a P-channel MOSFET, SPD30P06P turns on with V_GS ≈ -10 V, allowing direct gate drive from a microcontroller's logic-level output referenced to the source rail. No bootstrap capacitor or charge pump is required, simplifying high-side implementation in 12–48 V systems.

What is the maximum allowable gate-source voltage during transient conditions?

The absolute maximum V_GS is ±20 V per datasheet. Transient overshoot beyond -15 V or +15 V risks gate oxide damage. A Zener clamp (e.g., 12 V) between gate and source is recommended in noisy environments to ensure long-term reliability.

How does R_DS(on) vary with temperature, and what is its value at 125 °C?

R_DS(on) increases with junction temperature. At T_j = 125 °C and V_GS = -10 V, R_DS(on) is approximately 0.12 Ω-about 1.6× the 25 °C value-based on the typ. curve on Page 9 of the datasheet. Thermal design must account for this rise in conduction loss.

Can SPD30P06P replace an N-channel MOSFET in the same PCB footprint?

No. SPD30P06P uses P-TO252 with drain-connected tab, while most N-channel equivalents (e.g., IPP057N06N) use TO252 with source-connected tab. Pinout reversal and polarity inversion require board redesign-not a drop-in replacement-even if outline dimensions match.

SPD30P06P Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 75mOhm @ 21.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1.7mA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1535 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

SPD30P06P FAQ

1.How can I place an order for SPD30P06P through Aetrix?

Please submit a Request for Quotation (RFQ) for SPD30P06P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPD30P06P reliable?

The price and inventory of SPD30P06P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD30P06P is usually 5 days.

3.What payment methods are accepted for SPD30P06P?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD30P06P transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPD30P06P?

SPD30P06P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPD30P06P order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPD30P06P?

For technical support, including SPD30P06P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD30P06P requirements.

6.How does Aetrix verify that SPD30P06P is sourced from the original manufacturer or authorized distributors?

All SPD30P06P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD30P06P meets industry standards.

7.What is the process for return or replacement of SPD30P06P?

All SPD30P06P units undergo pre-shipment inspection (PSI). If there is an issue with SPD30P06P, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPD30P06P part is unused and in its original packaging.

Return procedure for SPD30P06P:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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