My Inquiry
My Account
Infineon Technologies IRF640NLPBF
- Part No.:
- IRF640NLPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRF640NLPBF.pdf
- Description:
- MOSFET N-CH 200V 18A TO262
- Quantity:
- Payment:
- Shipping:
Inventory:5,537
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF640NLPBF from Infineon Technologies (formerly International Rectifier) is a 200V, 18A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 0.15Ω RDS(on) at VGS = 10V, 150W power dissipation, and full avalanche rating. It serves as a high-efficiency switching element in DC-DC converters, motor drives, and AC solid-state relays.
For engineers reviewing the IRF640NLPBF datasheet, IRF640NLPBF pinout, IRF640NLPBF application, or IRF640NLPBF equivalent, key selection criteria include its 200V VDSS, 0.15Ω on-resistance, 67nC total gate charge, 167ns reverse recovery time, and TO-220AB thermal performance with RθJC = 1.0°C/W.
Technical Context
This HEXFET® fifth-generation MOSFET uses advanced silicon processing to minimize conduction loss while maintaining rugged fast-switching capability. Its gate threshold voltage (2.0–4.0V) enables direct TTL/CMOS drive, and the integrated body diode supports freewheeling in inductive loads.
The device is fully avalanche-rated (247mJ single-pulse EAS), supports high dv/dt (8.1V/ns), and exhibits low output capacitance (Coss = 185pF at VDS = 25V), enabling stable operation in hard-switched topologies up to 100kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 200V - maximum blocking voltage before avalanche; suitable for 120VAC line-fed SMPS and 48V industrial bus systems |
| RDS(on) | 0.15Ω @ VGS=10V, ID=11A - enables <1.8W conduction loss at 11A, reducing heatsink requirements |
| ID (TC=25°C) | 18A - continuous drain current rating under ideal heatsinking; derates linearly above 25°C case temperature |
| Qg | 67nC - total gate charge determines driver strength needed; requires ≥1A peak gate current for 100ns switching transitions |
| trr | 167ns (typ) - body diode reverse recovery time impacts turn-on loss in synchronous rectification and half-bridge freewheeling |
| EAS | 247mJ - single-pulse avalanche energy rating allows safe operation during inductive load switching transients without snubbers |
| RθJC | 1.0°C/W - junction-to-case thermal resistance enables 150W dissipation with ≤150°C temperature rise across heatsink interface |
Pinout & Package
IRF640NLPBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standard mounting hole, and 1.1N·m screw torque rating. The package provides low thermal resistance and mechanical robustness for industrial power stages.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path from source to load return | Electrically connected to metal tab; must be electrically isolated from heatsink unless circuit design intentionally ties drain to chassis ground |
| Gate | Control terminal for channel modulation | High-impedance input requiring <100nA leakage; sensitive to ESD; driven by logic-level or dedicated gate driver |
| Source | Reference node for gate drive and current return | Common connection point for load return, gate driver reference, and current sensing; defines local ground potential |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | 247mJ single-pulse EAS ensures reliable operation during inductive switching faults without external protection |
| Low RDS(on) | 0.15Ω minimizes I²R conduction loss in high-current DC-DC and motor control applications |
| Fast body diode | 167ns trr and 929nC Qrr reduce switching loss in freewheeling paths and synchronous rectifiers |
| Simple gate drive | 2.0–4.0V VGS(th) allows direct interface with 3.3V/5V microcontrollers and logic buffers without level-shifting |
| Thermally optimized package | TO-220AB delivers 1.0°C/W RθJC, supporting 150W operation with standard heatsinks and thermal paste |
Applications
| Switch-Mode Power Supply | Motor Drive Stage |
|---|---|
Use Scenario: Primary-side switch in 100–500W offline flyback or forward converters. IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer from AC line to transformer primary. Use Value: 200V VDSS accommodates reflected flyback spikes up to 170V; 0.15Ω RDS(on) keeps conduction loss below 3% at full load. | Use Scenario: Half-bridge high-side switch in 24–48V brushed DC motor controllers. IC Role / Device Role / Timing Role: Power switch delivering PWM-controlled current to motor windings. Use Value: Avalanche rating absorbs inductive kickback during PWM off-time; 18A ID supports 300W continuous motor output. |
| AC Solid-State Relay | DC Load Switch |
Use Scenario: Bidirectional AC switching in programmable logic controller (PLC) output modules. IC Role / Device Role / Timing Role: Back-to-back configured MOSFET providing zero-crossing–free AC load control. Use Value: 200V blocking capability covers 120/230VAC RMS; low gate charge enables fast turn-on for precise timing control. | Use Scenario: High-side power switch for 12–24V automotive or industrial auxiliary loads. IC Role / Device Role / Timing Role: Load disconnect and overcurrent protection switch in battery management subsystems. Use Value: 150W PD rating supports 10A@12V continuous loads; built-in avalanche tolerance prevents failure during cable short events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM60FD | 600V VDSS, 0.27Ω RDS(on), D2PAK package | Higher voltage rating but higher on-resistance and surface-mount only | Select when 600V blocking is required and PCB layout supports SMT; not drop-in for TO-220 footprint |
| IXTP18N20P | 200V VDSS, 0.16Ω RDS(on), TO-220FP (full-pack) package | Same voltage/current specs but lower profile and no isolated tab | Choose for space-constrained designs where tab isolation is unnecessary and lower height is critical |
Compared with STP20NM60FD and IXTP18N20P, IRF640NLPBF offers the lowest RDS(on) in TO-220AB with isolated drain tab-ideal for thermally demanding through-hole power stages where heatsink isolation is mandatory.
Availability
IRF640NLPBF is available at Aetrix Electronics and suitable for switch-mode power supplies, motor drives, AC solid-state relays, and DC load switches requiring stable component supply and long-term industrial availability.
Supply support for IRF640NLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon-based power devices.
The IRF640NLPBF belongs to Infineon's legacy HEXFET® power MOSFET product line, designed specifically for high-reliability, medium-power switching applications in industrial power conversion and motor control.
FAQ
Is IRF640NLPBF lead-free and RoHS compliant?
Yes. The "PbF" suffix confirms compliance with RoHS Directive 2011/65/EU. The device uses lead-free terminations and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), allowing unlimited floor life at ≤30°C/60% RH.
Can IRF640NLPBF be used with 3.3V microcontroller GPIOs?
No. With a minimum VGS(th) of 2.0V and typical RDS(on) specified at VGS = 10V, 3.3V drive yields high on-resistance (>1Ω) and excessive heating. A gate driver or level shifter is required for reliable switching.
What is the maximum recommended case temperature for continuous operation?
The absolute maximum case temperature is 175°C, but continuous operation above 100°C requires derating per the linear derating factor of 1.0W/°C. At TC = 100°C, maximum allowable power dissipation drops to 75W to maintain safe junction temperature.
Does IRF640NLPBF require a gate resistor, and what value is typical?
Yes. A gate resistor limits peak current during switching and damps ringing. For 100kHz operation with a 1A driver, a 10Ω series resistor is typical-balancing switching speed (≈20ns rise/fall) against EMI and gate oscillation risk.
IRF640NLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 150mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 67 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1160 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
IRF640NLPBF FAQ
1.How can I place an order for IRF640NLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF640NLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF640NLPBF reliable?
The price and inventory of IRF640NLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF640NLPBF is usually 5 days.
3.What payment methods are accepted for IRF640NLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF640NLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF640NLPBF?
IRF640NLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF640NLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF640NLPBF?
For technical support, including IRF640NLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF640NLPBF requirements.
6.How does Aetrix verify that IRF640NLPBF is sourced from the original manufacturer or authorized distributors?
All IRF640NLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF640NLPBF meets industry standards.
7.What is the process for return or replacement of IRF640NLPBF?
All IRF640NLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF640NLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF640NLPBF part is unused and in its original packaging.
Return procedure for IRF640NLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF640NLPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
