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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRL3803STRL MOSFET N-CH 30V 140A D2PAK Infineon Technologies	9,795	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	140A (Tc)	4.5V, 10V	6mOhm @ 71A, 10V	1V @ 250µA	140 nC @ 4.5 V	±16V	5000 pF @ 25 V	-	3.8W (Ta), 200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IPB05CN10N G MOSFET N-CH 100V 100A D2PAK Infineon Technologies	7,146	RFQ	Datasheet	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	100A (Tc)	10V	5.1mOhm @ 100A, 10V	4V @ 250µA	181 nC @ 10 V	±20V	12000 pF @ 50 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-3
GS-065-008-1-L-TR GS-065-008-1-L-TR Infineon Technologies Canada Inc.	7,687	RFQ	-	-	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	8A (Tc)	6V	225mOhm @ 2.2A, 6V	1.4V @ 1.74mA	1.5 nC @ 6 V	+7V, -10V	52 pF @ 400 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	8-PDFN (5x6)
SPP20N60S5 MOSFET N-CH 650V 20A TO220-3 Infineon Technologies	4,960	RFQ	Datasheet	CoolMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	20A (Tc)	10V	190mOhm @ 13A, 10V	5.5V @ 1mA	103 nC @ 10 V	±20V	3000 pF @ 25 V	-	208W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-1
IPI65R190CFDXKSA2 MOSFET N-CH 650V 17.5A TO262-3 Infineon Technologies	4,928	RFQ	Datasheet	CoolMOS™ CFD2	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	17.5A (Tc)	10V	190mOhm @ 7.3A, 10V	4.5V @ 700µA	68 nC @ 10 V	±20V	1850 pF @ 100 V	-	151W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO262-3
IPP05CN10L G MOSFET N-CH 100V 100A TO220-3 Infineon Technologies	7,761	RFQ	Datasheet	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	100A (Tc)	4.5V, 10V	5.1mOhm @ 100A, 10V	2.4V @ 250µA	163 nC @ 10 V	±20V	15600 pF @ 50 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3
IPB06P001LATMA1 MOSFET P-CH 60V 100A TO263-3 Infineon Technologies	4,018	RFQ	Datasheet	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	60 V	100A (Tc)	4.5V, 10V	11mOhm @ 100A, 10V	2V @ 5.55mA	281 nC @ 10 V	±20V	8500 pF @ 30 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-3
64-2042 MOSFET N-CH 40V 75A TO262 Infineon Technologies	3,644	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	75A (Tc)	10V	3.7mOhm @ 75A, 10V	4V @ 250µA	150 nC @ 10 V	±20V	4340 pF @ 25 V	-	220W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRFR1010Z MOSFET N-CH 55V 42A DPAK Infineon Technologies	4,169	RFQ	Datasheet	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	42A (Tc)	10V	7.5mOhm @ 42A, 10V	4V @ 100µA	95 nC @ 10 V	±20V	2840 pF @ 25 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)
IRF1704 MOSFET N-CH 40V 170A TO220AB Infineon Technologies	7,911	RFQ	Datasheet	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	170A (Tc)	10V	4mOhm @ 100A, 10V	4V @ 250µA	260 nC @ 10 V	±20V	6950 pF @ 25 V	-	230W (Tc)	-55°C ~ 200°C (TJ)	-	-	Through Hole	TO-220AB

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