Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPB06P001LATMA1

Part No.:
IPB06P001LATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIPB06P001LATMA1.pdf
Description:
MOSFET P-CH 60V 100A TO263-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,018

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPB06P001LATMA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET optimized for high-current DC-DC conversion and industrial motor control. It delivers -60 V VDS, 11 mΩ RDS(on) at VGS = -4.5 V, -100 A continuous drain current, and 100% avalanche-tested ruggedness in PG-TO263-3 (D²PAK) package with exposed drain tab.

For engineers reviewing the IPB06P001LATMA1 datasheet, IPB06P001LATMA1 pinout, IPB06P001LATMA1 application, or IPB06P001LATMA1 equivalent, key selection criteria include logic-level gate drive compatibility, low RDS(on) at 4.5 V, thermal performance under high-pulsed load, and industrial-grade reliability per JEDEC 47/20/22.

Technical Context

This OptiMOS™ power transistor operates in enhancement mode with a gate threshold voltage of -1.5 V (typ), enabling direct interface with 3.3 V and 5 V logic controllers. Its low gate charge (Qg = 281 nC) and fast switching (td(off) = 277 ns) support high-frequency synchronous buck topologies up to 500 kHz.

The device integrates a robust body diode with Qrr = 324 nC and trr = 88 ns, suitable for freewheeling in half-bridge configurations. Thermal resistance RthJC = 0.5 °C/W enables efficient heat transfer to PCB copper when mounted on ≥6 cm² cooling area.

Key Specifications

Parameter Value and Actual Design Meaning
VDS -60 V - Maximum blocking voltage for industrial 48 V bus systems and battery disconnect applications.
RDS(on) max 11 mΩ @ VGS = -4.5 V - Enables <1.1 W conduction loss at -91 A, critical for thermally constrained PCB layouts.
ID cont -100 A @ TC = 25 °C - Supports high-current motor phase switches and primary-side synchronous rectifiers.
EAS 1616 mJ - Confirmed single-pulse avalanche energy rating ensures reliable operation during inductive load turn-off transients.
Qg 281 nC - Total gate charge determines driver strength requirement; compatible with standard gate drivers like 1EDN7512B.
RthJC 0.5 °C/W - Junction-to-case thermal resistance enables predictable thermal design with direct PCB copper heatsinking.
VSD -0.9 to -1.2 V @ IF = -100 A - Low forward voltage drop reduces freewheeling losses in high-duty-cycle converters.

Pinout & Package

IPB06P001LATMA1 uses the PG-TO263-3 (D²PAK) package with an exposed drain tab on the underside for thermal and electrical connection. The package features three terminals: Gate (Pin 1), Source (Pin 3), and Drain (tab).

Pin/Terminal Circuit Role Design Meaning
Gate (Pin 1) Control input Receives negative gate-source voltage to turn on; logic-level compatible down to -4.5 V.
Source (Pin 3) Reference node Serves as common return path for gate drive and load current; tied to system ground in high-side switch configurations.
Drain (Tab) Power output Exposed metal tab provides low-inductance, high-current path to PCB copper; must be soldered to ≥6 cm² thermal pad.

Key Features

Feature Design Value
Pb-free & halogen-free RoHS-compliant plating and IEC61249-2-21 halogen-free construction meet automotive and industrial environmental mandates.
Logic-level gate drive Guaranteed turn-on at VGS = -4.5 V supports direct interfacing with microcontrollers and low-voltage gate drivers without level-shifting.
100% avalanche tested Each unit validated for single-pulse EAS = 1616 mJ, eliminating need for external snubbers in inductive switching circuits.
Industrial qualification Qualified per JEDEC47/20/22 for extended temperature range (-55 °C to +175 °C) and long-term reliability in harsh environments.

Applications

High-Side Load Switch 48 V DC-DC Synchronous Rectifier

Use Scenario: Power sequencing and fault-isolation in industrial PLC backplanes with 48 V supply rails.

IC Role / Device Role / Timing Role: High-side switch controlling power delivery to downstream modules; operates in linear or saturated mode during soft-start.

Use Value: Low RDS(on) minimizes voltage drop and self-heating during sustained 80 A loads; exposed drain tab simplifies thermal management on dense PCBs.

Use Scenario: Secondary-side synchronous rectification in isolated 48 V–12 V buck converters for telecom power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by complementary PWM signals; conducts during freewheeling interval.

Use Value: Body diode's low Qrr (324 nC) and fast trr (88 ns) reduce reverse recovery losses and EMI generation at 300–500 kHz switching frequencies.

Brushed DC Motor H-Bridge Industrial Battery Disconnect

Use Scenario: Bidirectional control of 24–48 V brushed motors in automated material handling equipment.

IC Role / Device Role / Timing Role: One quadrant of full H-bridge; handles bidirectional current up to ±100 A with integrated body diode freewheeling.

Use Value: Avalanche ruggedness ensures survival during motor stall and regenerative braking events without external clamping components.

Use Scenario: Isolation of lithium-ion battery packs in energy storage systems during overcurrent or thermal fault conditions.

IC Role / Device Role / Timing Role: Main disconnect switch placed between battery terminal and system bus; operated infrequently but required to interrupt >80 A fault currents.

Use Value: -60 V rating accommodates battery pack open-circuit voltages up to 57.6 V (16S Li-ion); 100% avalanche test guarantees safe interruption under worst-case inductive load conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-current power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP110P3LLH6 RDS(on) = 12.5 mΩ @ -4.5 V; higher Qg = 340 nC; TO-220FP package with insulated case. Limited to lower-frequency switching (<200 kHz) due to slower td(off); requires mechanical insulation for heatsink mounting. Preferred where cost sensitivity outweighs switching efficiency and PCB space constraints.
IRF4905PBF RDS(on) = 20 mΩ @ -10 V; not logic-level rated; TO-220 package; no avalanche rating specified. Requires -10 V gate drive; unsuitable for 3.3 V logic interfaces; lacks guaranteed avalanche capability for inductive loads. Only viable in legacy designs with dedicated -10 V gate supply and non-critical reliability requirements.

Compared with STP110P3LLH6 and IRF4905PBF, IPB06P001LATMA1 offers superior logic-level drive margin, lower conduction loss at 4.5 V, faster switching, and verified avalanche ruggedness-making it optimal for compact, high-efficiency, and safety-critical industrial power stages.

Availability

IPB06P001LATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, 48 V DC-DC converters, and battery management systems requiring stable component supply across multi-year production cycles.

Supply support for IPB06P001LATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ P-channel power MOSFET product line, engineered for high-efficiency, high-reliability power switching in industrial and transportation applications demanding low RDS(on), robust avalanche performance, and logic-level compatibility.

FAQ

What is the maximum junction temperature for continuous operation?

The IPB06P001LATMA1 is rated for continuous operation up to Tj = +175 °C, validated per JEDEC22-A102. Derating is required above TC = 100 °C per the power dissipation curve in Figure 1 of the datasheet, with Ptot decreasing linearly to zero at 175 °C case temperature.

Can this MOSFET be used in a high-side configuration with 3.3 V logic control?

Yes-the device is fully logic-level compatible with VGS(th) = -1.5 V (typ) and guaranteed RDS(on) ≤ 11 mΩ at VGS = -4.5 V. A 3.3 V microcontroller can drive it directly via an inverting stage (e.g., NPN transistor or dedicated inverting driver) to generate the required negative gate voltage relative to source.

Is the drain tab electrically isolated from the package body?

No-the D²PAK drain tab is electrically connected to the MOSFET's drain terminal and is not insulated. It must be soldered to a PCB copper pour serving as both thermal sink and power node. Electrical isolation requires a separate insulating thermal pad or mounting hardware.

Does the device include integrated ESD protection on the gate?

The datasheet does not specify on-chip ESD protection structures. Gate oxide withstands |VGS| ≤ 20 V per absolute maximum ratings, but external gate resistors (≥10 Ω) and TVS diodes are recommended in production designs to prevent damage from handling or system-level transients.

IPB06P001LATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
11mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
2V @ 5.55mA
Gate Charge (Qg) (Max) @ Vgs:
281 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
8500 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
300W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3

IPB06P001LATMA1 FAQ

1.How can I place an order for IPB06P001LATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB06P001LATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB06P001LATMA1 reliable?

The price and inventory of IPB06P001LATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB06P001LATMA1 is usually 5 days.

3.What payment methods are accepted for IPB06P001LATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB06P001LATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB06P001LATMA1?

IPB06P001LATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB06P001LATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB06P001LATMA1?

For technical support, including IPB06P001LATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB06P001LATMA1 requirements.

6.How does Aetrix verify that IPB06P001LATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB06P001LATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB06P001LATMA1 meets industry standards.

7.What is the process for return or replacement of IPB06P001LATMA1?

All IPB06P001LATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB06P001LATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB06P001LATMA1 part is unused and in its original packaging.

Return procedure for IPB06P001LATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPB06P001LATMA1 Tags

  • IPB06P001LATMA1
  • IPB06P001LATMA1 PDF
  • IPB06P001LATMA1 Datasheet
  • IPB06P001LATMA1 Specifications
  • IPB06P001LATMA1 Images
  • Infineon Technologies
  • Infineon Technologies IPB06P001LATMA1
  • Buy IPB06P001LATMA1
  • IPB06P001LATMA1 Price
  • IPB06P001LATMA1 Distributor
  • IPB06P001LATMA1 Supplier
  • IPB06P001LATMA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER