Infineon Technologies 64-2042

Overview

64-2042 from International Rectifier is an N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, rated for 40 V V(BR)DSS, 2.7 mΩ typical RDS(on), 180 A silicon-limited continuous drain current at 25°C, and 175°C maximum junction temperature. It delivers fast switching (tr = 110 ns, tf = 58 ns), high repetitive avalanche capability (EAS = 480 mJ), and low gate charge (Qg = 100 nC), enabling high-efficiency DC-DC conversion and motor drive stages.

For engineers reviewing the 64-2042 datasheet, 64-2042 pinout, 64-2042 application, or 64-2042 equivalent, key selection criteria include on-resistance vs. thermal derating, unclamped inductive switching robustness, body diode recovery performance (trr = 28–42 ns), and gate drive compatibility with 10 V logic-level controllers in high-current power stages.

Technical Context

This MOSFET employs advanced planar silicon processing to minimize RDS(on) per die area while maintaining rugged avalanche operation. Its 175°C TJ rating enables sustained conduction under high ambient conditions, and its low Ciss (4340 pF) and Crss (550 pF) support high-frequency PWM control up to several hundred kHz.

The integrated body diode exhibits low forward voltage (VSD = 1.3 V) and controlled reverse recovery (Qrr = 34–51 nC), making it suitable for synchronous rectification and freewheeling paths where di/dt-induced voltage spikes must be minimized.

Key Specifications

Pinout & Package

64-2042 is housed in a TO-220AB package with isolated tab (drain-connected), standard mounting hole, and 6.35 mm lead spacing. Thermal resistance RθJC is 0.75°C/W, enabling direct heatsink attachment via M3 screw (1.1 N·m torque).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP40NF10L, 64-2042 offers 4.6× lower conduction loss at 40 V systems; versus IXTH120N04S3, it trades 0.8 mΩ RDS(on) for 40% smaller board area and simpler gate drive, making it optimal for space-constrained 100–180 A applications.

Availability

64-2042 is available at Aetrix Electronics and suitable for DC-DC converters, automotive starter circuits, industrial motor drives, and UPS output stages requiring stable component supply and long-term production continuity.

Supply support for 64-2042 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) is a pioneer in power semiconductor design, specializing in high-efficiency MOSFETs, IGBTs, and driver ICs for industrial, automotive, and computing markets.

The HEXFET® product line was engineered for high-current, high-reliability switching in harsh thermal and electrical environments-targeting applications where low RDS(on), avalanche ruggedness, and fast switching are simultaneously critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The 64-2042 supports 120 A continuous drain current at TC = 100°C, as specified in the Absolute Maximum Ratings table. This reflects package-limited conduction capacity due to thermal saturation of the TO-220AB leadframe, not silicon limitation. Derating curves in Figure 9 confirm linear reduction from 180 A at 25°C to 120 A at 100°C.

Is the body diode suitable for synchronous rectification?

Yes-the integral body diode has VSD = 1.3 V at IS = 75 A and trr = 28–42 ns, enabling use in synchronous buck topologies up to 300 kHz. However, its Qrr (34–51 nC) is higher than discrete Schottky diodes, so gate timing must avoid overlap during transitions to prevent shoot-through.

Does 64-2042 require a gate resistor for stability?

A gate resistor (RG = 3–10 Ω) is recommended to dampen ringing caused by LS (7.5 nH) and stray inductance in the gate loop. The datasheet's switching test circuit (Figure 18a) uses RG = 3.0 Ω, and oscillation above 100 MHz is observed without it-especially with high-speed drivers and long PCB traces.

Can 64-2042 be paralleled for higher current?

Yes-its positive RDS(on) temperature coefficient (Figure 10) ensures inherent current sharing when paralleled. Layout must balance gate and source inductances across devices; mismatch >1 nH in LS causes >15% current imbalance at 100 A. Use Kelvin-source connections and matched gate drive paths.