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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP20N60S5

Name: SPP20N60S5
Brand: Infineon Technologies
SKU: SPP20N60S5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP20N60S5

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP20N60S5.pdf

Description:: MOSFET N-CH 650V 20A TO220-3

Quantity:: RFQ Add To RFQ list

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Inventory:4,960

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Product details

Overview

SPP20N60S5 from Infineon Technologies is a 600 V, 20 A N-channel CoolMOS™ superjunction power MOSFET in PG-TO220 package, featuring R_DS(on) = 0.19 Ω (T_j = 25°C), ultra-low gate charge (Q_g = 79 nC), and periodic avalanche rating. It serves as a high-efficiency primary-side switch in offline SMPS, PFC stages, and industrial motor drives requiring robust dv/dt immunity (20 V/ns) and low switching losses.

For engineers reviewing the SPP20N60S5 datasheet, SPP20N60S5 pinout, SPP20N60S5 application, or SPP20N60S5 equivalent, key selection criteria include its 600 V blocking voltage, 0.19 Ω R_DS(on), 79 nC total gate charge, 3000 pF input capacitance, and TO-220 thermal resistance of 0.6 K/W - all critical for hard-switched 50–100 kHz flyback and LLC resonant converters.

Technical Context

This device implements Infineon's 5th-generation CoolMOS™ superjunction architecture, optimized for reduced specific on-resistance and minimized capacitive energy losses. Its ultra-low Q_gd/Q_gs ratio (47 nC / 21 nC ≈ 2.24) enables fast, controllable turn-off with low Miller-induced oscillation risk in high-voltage half-bridge configurations.

The MOSFET integrates an intrinsic body diode rated for 20 A continuous forward current (I_S) and 610 ns reverse recovery time (t_rr) at 350 V, supporting quasi-resonant and ZVS operation. Its 690 mJ single-pulse avalanche energy (E_AS) and 20 V/ns dv/dt rating allow reliable operation under transient overvoltage and inductive load switching without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports universal-input (85–265 V_AC) offline converters with ≥2× safety margin against reflected transients.
R_DS(on)	0.19 Ω @ T_j = 25°C - Enables <1.5 W conduction loss at 13 A DC, reducing heatsink requirements in 150–300 W PFC stages.
Q_g	79 nC - Low gate drive power demand (<150 mW at 100 kHz), compatible with standard 1-A peak gate drivers like 1EDN7512B.
C_iss	3000 pF - Predictable Miller plateau timing supports stable PWM control up to 200 kHz in resonant topologies.
E_AS	690 mJ - Withstands single-event inductive energy spikes (e.g., transformer leakage in flyback) without failure at T_j ≤ 150°C.
t_r/t_f	25 ns / 30 ns - Fast switching minimizes overlap loss in hard-switched topologies, improving efficiency by ~0.8% at full load.
R_thJC	0.6 K/W - Enables 208 W dissipation at T_C = 25°C; practical derating yields ~50 W at T_C = 80°C with standard TO-220 heatsink.

Pinout & Package

Package: PG-TO220 (P-TO220-3-1), through-hole, isolated tab (drain-connected), 3-pin configuration with industry-standard footprint and thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Low-inductance connection point for source loop; ties directly to PCB ground plane to minimize switching noise coupling.
2 (Gate)	Control terminal for channel modulation	High-impedance input requiring <100 nA leakage; routed with tight guard ring to suppress dv/dt-induced false turn-on.
3 (Drain)	Main high-voltage power terminal	Internally connected to metal tab; must be electrically isolated from heatsink unless using insulating washer and thermal pad.

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 79 nC enables efficient 100–200 kHz operation with minimal driver loss and reduced EMI filter size.
Periodic avalanche rated	Rated for repetitive I_AR = 20 A pulses - supports rugged operation in unclamped inductive switching (e.g., relay drivers).
Extreme dv/dt immunity	20 V/ns rating prevents spurious turn-on during fast voltage transients in high-noise industrial environments.
Low effective output capacitance	C_o(er) = 83 pF - reduces stored energy loss (E_oss) during turn-on, critical for ZVS soft-switching efficiency.
Improved transconductance	g_fs = 12 S - delivers strong current drive capability and stable gain across temperature for precise current-mode control.

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-density 1U server power supply operating at 100 kHz with active clamp flyback topology.

IC Role / Device Role / Timing Role: Main high-side switching element handling 600 V DC bus and 15 A peak drain current.

Use Value: 0.19 Ω R_DS(on) and 79 nC Q_g reduce total switching + conduction loss to <2.1 W, enabling >94% efficiency at 50% load.

Use Scenario: 3.3 kW industrial three-phase PFC front-end with interleaved boost converters.

IC Role / Device Role / Timing Role: Fast-switching boost switch operating at 65 kHz with 20 A RMS current per phase.

Use Value: 690 mJ E_AS and 20 V/ns dv/dt rating eliminate need for external avalanche clamps, simplifying layout and BOM.

Motor Drive Inverter Leg

EV Charger AC/DC Stage

Use Scenario: 7.4 kW onboard EV charger using two-level inverter with Si IGBT replacement.

IC Role / Device Role / Timing Role: Upper-leg switch in 3-phase bridge, switching 400 V DC link at 16 kHz.

Use Value: Body diode t_rr = 610 ns and Q_rr = 12 µC enable clean commutation with minimal tail current loss vs. standard MOSFETs.

Use Scenario: 11 kW AC/DC stage in wall-box EV charger with dual-phase interleaved PFC + LLC.

IC Role / Device Role / Timing Role: Primary-side switch in LLC half-bridge resonant converter, operating at 250 kHz ZVS.

Use Value: C_o(er) = 83 pF and low Crss reduce dead-time sensitivity and improve ZVS margin across line/load variations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM60ND	R_DS(on) = 0.22 Ω, Q_g = 95 nC, no specified dv/dt rating	Lacks documented avalanche robustness and extreme dv/dt immunity	Prefer where cost sensitivity outweighs need for transient ruggedness in well-clamped designs.
IPP60R190C7	R_DS(on) = 0.19 Ω, Q_g = 63 nC, 650 V rating, CoolMOS™ C7 generation	Lower gate charge improves light-load efficiency but requires updated gate drive tuning	Select for new designs targeting highest efficiency above 50 kHz; verify layout for higher di/dt sensitivity.

Compared with STP20NM60ND and IPP60R190C7, the SPP20N60S5 offers superior dv/dt immunity (20 V/ns) and proven periodic avalanche capability - making it preferred for unclamped inductive loads and noisy industrial mains environments, despite slightly higher Q_g than C7-series alternatives.

Availability

SPP20N60S5 is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, motor drive inverters, and EV charger AC/DC stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for SPP20N60S5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power, sensor, and automotive ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The CoolMOS™ product line targets high-efficiency, high-reliability power conversion in industrial, server, and renewable energy systems - designed specifically to replace planar MOSFETs and IGBTs in 500–900 V applications.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The SPP20N60S5 supports 13 A continuous drain current (I_D) at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220 package and ensures safe junction temperature operation below 150°C under typical heatsink conditions.

Does the body diode have soft recovery characteristics?

No - the integrated body diode exhibits standard recovery behavior with t_rr = 610 ns and Q_rr = 12 µC at 350 V, 20 A, and di/dt = 100 A/µs. It is not classified as "soft" (low Q_rr/t_rr ratio); designers should account for associated switching loss and potential ringing in hard-commutated topologies.

Can SPP20N60S5 be used in zero-voltage switching (ZVS) circuits?

Yes - its low C_o(er) = 83 pF and C_oss = 1170 pF enable predictable resonant tank behavior. Combined with 25 ns rise time and 30 ns fall time, it supports reliable ZVS in LLC and phase-shifted full-bridge converters operating up to 300 kHz when properly tuned with external resonant components.

Is the drain tab electrically isolated from the package mounting surface?

Yes - the PG-TO220 package features an isolated metal tab internally connected only to the drain terminal. When mounted to a heatsink, electrical isolation (e.g., mica washer or silicone pad) is mandatory unless the heatsink is fully floating or referenced to drain potential.

SPP20N60S5 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 103 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP20N60S5 FAQ

1.How can I place an order for SPP20N60S5 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP20N60S5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP20N60S5 reliable?

The price and inventory of SPP20N60S5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP20N60S5 is usually 5 days.

3.What payment methods are accepted for SPP20N60S5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP20N60S5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP20N60S5?

SPP20N60S5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP20N60S5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP20N60S5?

For technical support, including SPP20N60S5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP20N60S5 requirements.

6.How does Aetrix verify that SPP20N60S5 is sourced from the original manufacturer or authorized distributors?

All SPP20N60S5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP20N60S5 meets industry standards.

7.What is the process for return or replacement of SPP20N60S5?

All SPP20N60S5 units undergo pre-shipment inspection (PSI). If there is an issue with SPP20N60S5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP20N60S5 part is unused and in its original packaging.

Return procedure for SPP20N60S5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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