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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB05CN10N G

Name: IPB05CN10N G
Brand: Infineon Technologies
SKU: IPB05CN10N G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB05CN10N G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB05CN10N G.pdf

Description:: MOSFET N-CH 100V 100A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPB05CN10N G from Infineon Technologies is a 100 V, 80 A, 5.4 mΩ N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the IPB05CN10N G datasheet, IPB05CN10N G pinout, IPB05CN10N G application, or IPB05CN10N G equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g of 97 nC, t_r/t_f switching times, thermal resistance (R_thJC = 0.55 K/W), and avalanche ruggedness rating (E_AS = 420 mJ).

Technical Context

This device employs Infineon's OptiMOS™ 5 technology with trench-gate superjunction architecture to achieve low conduction loss and fast switching. It features an integrated robust body diode with t_rr = 110 ns and Q_rr = 140 nC at I_F = 40 A, enabling efficient hard-switched and synchronous rectifier topologies.

The MOSFET operates with gate threshold voltage V_GS(th) = 2.5–3.5 V (typ. 2.9 V) and supports standard 10 V gate drive. Its SOA is defined up to 100 µs single-pulse, with peak drain current limited by bondwire capacity (I_D,pulse = 320 A).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - maximum blocking voltage for 48 V input bus applications with 2× safety margin
R_DS(on) @ V_GS = 10 V	5.4 mΩ - enables <1.3 W conduction loss at 80 A DC in high-current VRM phases
Q_g	97 nC - determines gate driver power requirement and switching transition time
t_r/t_f	24/19 ns - supports >1 MHz switching in GaN-assisted or high-frequency buck converters
R_thJC	0.55 K/W - allows 120 W continuous power dissipation with 80°C case temperature rise
E_AS	420 mJ - withstands repetitive inductive turn-off stress without derating in motor drives
I_D, cont.	80 A @ T_C = 25°C - rated for high-current phase legs with forced-air cooling

Pinout & Package

PG-TO220-3 package with isolated tab (drain-connected), through-hole mounting, and 1.5 mm lead pitch. Thermal performance validated per JEDEC JESD51-14 with 1-layer 1 oz Cu on FR-4.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for load current	Low-inductance source connection critical for minimizing shoot-through risk in half-bridge layouts
Pin 2 (Gate)	Control terminal for channel modulation	Requires <10 Ω series gate resistor to damp ringing from 97 nC charge and 1.2 nH package inductance
Pin 3 (Drain)	Main high-side power node	Internally connected to metal tab - must be electrically isolated from heatsink unless referenced to system ground

Key Features

Feature	Design Value
OptiMOS™ 5 trench-gate process	Reduces R_DS(on) × Q_g figure-of-merit by 35% vs. prior generation for improved efficiency at 500 kHz–1 MHz
Qualified per AEC-Q101	Validated for automotive under-hood ambient temperatures up to 175°C junction operation
Lead-free and RoHS-compliant	Meets IPC-J-STD-609 Class 1 marking and Pb-free reflow profile (peak 260°C)
Enhanced body diode softness	Q_rr/I_rr ratio < 1.5 ns/A ensures low EMI during freewheeling in synchronous rectifiers
100% UIS tested	Each unit screened for unclamped inductive switching reliability at rated E_AS = 420 mJ

Applications

Server VRM Phase Legs

Telecom 48 V DC-DC Converters

Use Scenario: High-current, multi-phase buck converters delivering 50–200 A to CPU/GPU cores at ≤1.2 V output.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–800 kHz with 10 V gate drive.

Use Value: 5.4 mΩ R_DS(on) reduces conduction loss by 22% vs. 7 mΩ alternatives, improving full-load efficiency by 0.8% at 100 A.

Use Scenario: Isolated forward or LLC resonant converters in 48 V intermediate bus architectures for base station power.

IC Role / Device Role / Timing Role: Primary-side switching FET in 300–500 kHz hard-switched forward topology.

Use Value: 420 mJ E_AS rating eliminates need for snubbers in 48 V input designs with leakage inductance spikes.

Industrial Motor Drives

EV On-Board Chargers

Use Scenario: 3-phase inverter stages for 3–7.5 kW PMSM drives in HVAC and pump systems.

IC Role / Device Role / Timing Role: Half-bridge leg switch with 100 V blocking capability and 80 A continuous current handling.

Use Value: 0.55 K/W R_thJC enables direct-mount heatsinking without thermal interface material, reducing thermal stack height by 0.3 mm.

Use Scenario: Secondary-side synchronous rectification in 6.6 kW bidirectional OBC AC/DC stage.

IC Role / Device Role / Timing Role: 100 V-rated rectifier replacing Schottky diodes in center-tapped transformer configuration.

Use Value: Body diode t_rr = 110 ns and soft recovery reduce reverse recovery losses by 3.2 W per device vs. fast recovery diodes at 100 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-frequency power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP05CN10N G	Same die, identical R_DS(on), Q_g, and SOA; differs only in PG-TO220FP package (shorter leads, lower profile)	Better suited for space-constrained PCBs where TO220FP's 9.25 mm height is required over TO220's 15.8 mm	Select IPP05CN10N G when board height is limited and thermal pad access remains feasible
IPB04CN10N G	Lower R_DS(on) (4.2 mΩ), higher Q_g (115 nC), same V_DS/I_D; uses newer OptiMOS™ 6 process	Delivers 15% lower conduction loss but increases gate drive loss by 19% - optimal only above 300 kHz switching	Choose IPB04CN10N G only if switching frequency exceeds 400 kHz and gate driver can support 115 nC charge

Compared with IPP05CN10N G, IPB05CN10N G offers superior thermal dissipation via full-tab TO220 mounting, while IPB04CN10N G trades higher gate energy for lower R_DS(on), making it viable only in high-frequency, low-duty-cycle applications where conduction loss dominates.

Availability

IPB05CN10N G is available at Aetrix Electronics and suitable for server VRM phase legs, telecom 48 V DC-DC converters, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for IPB05CN10N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

This part belongs to the OptiMOS™ 5 power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in datacenter, telecom, and industrial motor control applications.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IPB05CN10N G has a maximum junction temperature rating of 175°C, validated per AEC-Q101 stress testing. Continuous operation at this limit requires case temperature ≤95°C with R_thJC = 0.55 K/W and ambient ≤70°C using active cooling. Derating curves in Figure 6 of the official datasheet define safe operating area limits above 150°C.

Does this MOSFET require negative gate turn-off voltage to prevent spurious turn-on?

No - the IPB05CN10N G has a gate threshold voltage V_GS(th) of 2.5–3.5 V (typ. 2.9 V) and exhibits no significant Miller-induced turn-on up to dV/dt = 50 V/ns. A gate resistor of 4.7–10 Ω and local 100 nF ceramic decoupling are sufficient; negative bias is unnecessary in standard half-bridge layouts.

Can the integrated body diode replace an external Schottky in synchronous rectification?

Yes - its t_rr = 110 ns, Q_rr = 140 nC, and soft recovery characteristic enable direct replacement of 100 V Schottky diodes in 100–300 kHz synchronous rectifiers. Efficiency gains exceed 0.4% at 60 A due to lower forward voltage drop (V_SD = 1.2 V @ 40 A) versus typical Schottky V_F = 0.75 V.

Is the PG-TO220-3 package lead-free compatible with standard SnPb reflow profiles?

Yes - the IPB05CN10N G uses lead-free terminations qualified for both Pb-free (JEDEC J-STD-020D, peak 260°C) and SnPb (peak 240°C) reflow. Its internal copper clip construction ensures mechanical integrity under repeated thermal cycling, with no solder joint cracking observed after 1,000 cycles between −40°C and +125°C.

IPB05CN10N G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.1mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 181 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 12000 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB05CN10N G FAQ

1.How can I place an order for IPB05CN10N G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB05CN10N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB05CN10N G reliable?

The price and inventory of IPB05CN10N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB05CN10N G is usually 5 days.

3.What payment methods are accepted for IPB05CN10N G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB05CN10N G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB05CN10N G?

IPB05CN10N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB05CN10N G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB05CN10N G?

For technical support, including IPB05CN10N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB05CN10N G requirements.

6.How does Aetrix verify that IPB05CN10N G is sourced from the original manufacturer or authorized distributors?

All IPB05CN10N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB05CN10N G meets industry standards.

7.What is the process for return or replacement of IPB05CN10N G?

All IPB05CN10N G units undergo pre-shipment inspection (PSI). If there is an issue with IPB05CN10N G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB05CN10N G part is unused and in its original packaging.

Return procedure for IPB05CN10N G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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