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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR1010Z

Name: IRFR1010Z
Brand: Infineon Technologies
SKU: IRFR1010Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR1010Z

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR1010Z.pdf

Description:: MOSFET N-CH 55V 42A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR1010Z from Infineon Technologies is a 55V, 42A N-channel D-Pak power MOSFET with 7.5mΩ R_DS(on) at V_GS = 10V, 175°C junction rating, and rated repetitive avalanche energy up to 91mJ - designed for high-efficiency DC-DC converters, motor drives, and synchronous rectification in industrial power supplies.

For engineers reviewing the IRFR1010Z datasheet, IRFR1010Z pinout, IRFR1010Z application, or IRFR1010Z equivalent, key selection criteria include its low conduction loss (5.8–7.5mΩ), fast switching (t_r = 76ns, t_f = 48ns), body diode recovery (t_rr = 24–36ns), and thermal robustness (R_θJC = 1.11°C/W).

Technical Context

This HEXFET® device uses advanced silicon processing to minimize on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its gate charge profile (Q_g = 63–95nC, Q_gd = 23nC) supports efficient PWM operation at frequencies up to several hundred kHz.

The integrated body diode exhibits V_SD = 1.3V at 42A and controlled reverse recovery (Q_rr = 20–30nC, t_rr = 24–36ns), enabling reliable synchronous rectification without external Schottky supplementation in medium-power topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55V - maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in buck, half-bridge, and flyback primary switches
R_DS(on)	7.5mΩ max @ V_GS = 10V, T_J = 25°C - determines I²R conduction loss; enables <1.3W dissipation at 42A continuous
I_D	42A @ T_C = 25°C - continuous drain current limited by package thermal capacity; derates to ~25A at T_C = 100°C
E_AS	91mJ - single-pulse avalanche energy rating; allows safe operation during inductive turn-off transients without snubber
t_r/t_f	76ns/48ns - rise/fall times under standard test conditions (V_DD = 28V, I_D = 42A, R_G = 7.6Ω); defines minimum practical PWM period
T_J max	175°C - maximum junction temperature; enables high ambient operation with conservative heatsinking
Q_g	95nC max - total gate charge; determines driver current requirement (e.g., 1A peak needed for 100ns turn-on)

Pinout & Package

IRFR1010Z is housed in a surface-mount D-Pak (TO-252AA) package with exposed drain pad for thermal enhancement. The three terminals are arranged in standard D-Pak orientation: Drain (tab), Source (pin 1), Gate (pin 2).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path and thermal interface	Electrically connected to metal tab; must be soldered to PCB copper pour for R_θJC = 1.11°C/W performance
Source (Pin 1)	Reference node for gate drive and current return	Low-inductance connection point for gate driver ground and load return; internal source inductance L_S = 7.5nH
Gate (Pin 2)	Control terminal for channel modulation	High-impedance input requiring <95nC charge; threshold V_GS(th) = 2.0–4.0V ensures TTL/CMOS compatibility

Key Features

Feature	Design Value
Ultra-low R_DS(on)	7.5mΩ max enables >96% efficiency in 12V–48V input DC-DC stages at 30–40A output
Repetitive avalanche rating	Rated for unlimited repetitive unclamped inductive switching up to T_Jmax, eliminating need for external clamps in relay drivers
Fast body diode	24–36ns reverse recovery time and 20–30nC Q_rr support synchronous rectification without cross-conduction risk
175°C junction rating	Allows full 42A current derating only to ~100°C case temperature, simplifying thermal design in sealed enclosures

Applications

Motor Control

DC-DC Conversion

Use Scenario: Brushed DC motor H-bridge driver in industrial actuators operating at 24–48V bus.

IC Role / Device Role / Timing Role: Low-side switch handling bidirectional 30–40A stall current with fast PWM commutation.

Use Value: 7.5mΩ R_DS(on) limits conduction loss to <5W at 40A, while 175°C rating sustains operation during intermittent overload.

Use Scenario: Secondary-side synchronous rectifier in isolated 48V-to-12V telecom DC-DC module.

IC Role / Device Role / Timing Role: Body-diode-assisted freewheeling switch with gate driven by transformer-coupled signal.

Use Value: 24–36ns t_rr and 1.3V V_SD reduce switching loss vs. Schottky alternatives, improving full-load efficiency by 1.2–1.8%.

Power Supply Protection

LED Driver

Use Scenario: Hot-swap and inrush current limiter in 36V industrial power distribution unit.

IC Role / Device Role / Timing Role: High-side pass element controlled via linear gate bias for soft-start and overcurrent foldback.

Use Value: 55V V_DSS accommodates 36V nominal + 20% surge; 91mJ E_AS absorbs fault energy during short-circuit events.

Use Scenario: Constant-current buck controller for high-brightness LED arrays in street lighting fixtures.

IC Role / Device Role / Timing Role: Primary switching transistor operating at 200–500kHz with duty cycle modulated for dimming.

Use Value: 76ns t_r/48ns t_f minimizes transition loss at high frequency, reducing thermal stress on heatsink by ~15% vs. slower MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N55F7	55V, 110A, R_DS(on) = 5.5mΩ, TO-220 package, higher capacitance (C_iss = 4700pF)	Higher current handling but larger footprint and slower switching (t_r = 120ns)	Prefer for high-current, lower-frequency (<100kHz) applications where thermal mass outweighs switching loss
IXTP110N10T	100V, 110A, R_DS(on) = 6.0mΩ, TO-220, higher V_DSS margin but 2× gate charge (Q_g = 180nC)	Over-spec'd voltage rating increases cost and reduces switching speed in 48V systems	Select only if system requires >60V transient immunity or dual-voltage platform reuse

Compared with STP110N55F7 and IXTP110N10T, IRFR1010Z offers optimal balance of low R_DS(on), fast switching, compact D-Pak footprint, and proven avalanche ruggedness - making it preferred for space-constrained, medium-frequency (>200kHz) industrial power stages where thermal resistance and layout simplicity are critical.

Availability

IRFR1010Z is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, and power supply protection requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFR1010Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The HEXFET® Power MOSFET product line targets high-reliability industrial and automotive power conversion, emphasizing low-loss switching, avalanche ruggedness, and thermally optimized packaging for demanding embedded environments.

FAQ

Is IRFR1010Z suitable for synchronous rectification in isolated DC-DC converters?

Yes - its fast body diode (t_rr = 24–36ns, Q_rr = 20–30nC) and low V_SD (1.3V at 42A) enable efficient synchronous rectification without shoot-through risk when paired with precise gate timing. The D-Pak package's low R_θJC (1.11°C/W) also supports high-duty-cycle operation.

What is the recommended gate resistor value for hard-switching at 300kHz?

A 5.1Ω to 10Ω gate resistor is recommended to balance switching speed and ringing suppression. With Q_g = 95nC max and typical driver output impedance <2Ω, this yields ~100–200ns effective turn-on time - sufficient for 300kHz PWM while limiting dV/dt-induced EMI and gate overshoot.

Does IRFR1010Z require a heatsink in a 42A continuous application?

Yes - at 42A and 7.5mΩ R_DS(on), conduction loss is ~13.2W. With R_θJC = 1.11°C/W and ambient ≤50°C, even a modest 15°C/W heatsink is required to hold T_J ≤150°C. PCB copper area alone is insufficient for full-rated current without forced air.

Can IRFR1010Z replace IRFR1010 in existing designs?

Yes - IRFR1010Z is a direct replacement for IRFR1010 with identical pinout, package, and electrical specs, plus enhanced avalanche rating (91mJ vs. 65mJ) and improved thermal stability. No layout or firmware changes are needed; the Z suffix denotes Gen 7 process improvements including tighter R_DS(on) distribution and higher E_AS.

IRFR1010Z Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 42A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2840 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR1010Z FAQ

1.How can I place an order for IRFR1010Z through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR1010Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR1010Z reliable?

The price and inventory of IRFR1010Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR1010Z is usually 5 days.

3.What payment methods are accepted for IRFR1010Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR1010Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR1010Z?

IRFR1010Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR1010Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR1010Z?

For technical support, including IRFR1010Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR1010Z requirements.

6.How does Aetrix verify that IRFR1010Z is sourced from the original manufacturer or authorized distributors?

All IRFR1010Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR1010Z meets industry standards.

7.What is the process for return or replacement of IRFR1010Z?

All IRFR1010Z units undergo pre-shipment inspection (PSI). If there is an issue with IRFR1010Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR1010Z part is unused and in its original packaging.

Return procedure for IRFR1010Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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