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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI65R190CFDXKSA2

Name: IPI65R190CFDXKSA2
Brand: Infineon Technologies
SKU: IPI65R190CFDXKSA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI65R190CFDXKSA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI65R190CFDXKSA2.pdf

Description:: MOSFET N-CH 650V 17.5A TO262-3

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Product details

Overview

IPI65R190CFDXKSA2 from Infineon Technologies is a 650 V, 17.5 A (T_C = 100 °C), 0.19 Ω R_DS(on) CoolMOS™ CFD2 superjunction N-channel power MOSFET in PG-TO262 (D²PAK) package, featuring ultra-fast body diode (t_rr = 120 ns, Q_rr = 0.5 µC), high commutation ruggedness (di/dt = 900 A/µs), and low E_oss (5.7 µJ @ 400 V), optimized for resonant LLC and ZVS-PWM topologies in server PSUs and telecom rectifiers.

For engineers reviewing the IPI65R190CFDXKSA2 datasheet, IPI65R190CFDXKSA2 pinout, IPI65R190CFDXKSA2 application, or IPI65R190CFDXKSA2 equivalent, key selection criteria include body diode robustness under hard commutation, R_DS(on) × Q_g figure-of-merit (12.9 Ω·nC), thermal resistance (R_thJC = 0.83 °C/W), and TO-262 mounting compatibility with industrial PCB layouts.

Technical Context

This device implements Infineon's second-generation CoolMOS™ CFD superjunction architecture with charge compensation trenches, enabling simultaneous reduction of conduction loss (R_DS(on) = 0.19 Ω max) and switching loss (Q_g = 68 nC typ, E_oss = 5.7 µJ @ 400 V). Its gate threshold voltage (V_GS(th) = 3.5–4.5 V) ensures stable turn-on under wide supply ranges.

The integrated ultra-fast body diode delivers t_rr = 120 ns and I_rrm = 7.5 A at di/dt = 900 A/µs - validated for repetitive avalanche operation up to E_AS = 484 mJ (single pulse) and E_AR = 0.70 mJ (repetitive) - making it suitable for zero-voltage-switching transitions without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V DC bus designs with ≥50 % voltage margin for transient overvoltage in telecom/server SMPS
R_DS(on),max	0.19 Ω @ T_J = 25 °C - enables <1.9 W conduction loss at 11 A RMS in continuous conduction mode PFC stages
Q_g,typ	68 nC - determines gate drive power requirement (~0.85 W @ 100 kHz, 13 V swing) and influences MOSFET switching speed control
E_oss@400V	5.7 µJ - directly reduces turn-off energy loss in resonant converters and improves ZVS soft-start reliability
t_rr	120 ns - allows safe commutation at >500 kHz in half-bridge LLC with minimal reverse recovery overshoot
R_thJC	0.83 °C/W - enables 151 W power dissipation at T_C = 25 °C, supporting compact heatsink integration in high-density PSU modules
di/dt rating	900 A/µs - guarantees robustness during hard-switched inductive turn-off events without parasitic oscillation or latch-up

Pinout & Package

Package: PG-TO262 (D²PAK), surface-mount, isolated drain tab, standard JEDEC outline with 3.5 mm creepage distance.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input terminal	Receives 10 V gate drive signal; low gate resistance (R_G = 1 Ω) minimizes Miller-induced false turn-on in high-dv/dt environments
Pin 2 (Drain)	High-side power output node	Connected to primary winding or DC bus; electrically isolated metal tab provides thermal path to PCB copper pour
Pin 3 (Source)	Reference return path	Serves as local ground reference for gate driver IC; must be routed with low-inductance trace to minimize switching noise coupling

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 120 ns, Q_rr = 0.5 µC - eliminates need for external anti-parallel SiC Schottky in resonant half-bridges
High commutation ruggedness	di/dt = 900 A/µs - sustains repeated hard commutation without degradation in LLC transformer reset cycles
Low R_DS(on) × Q_g FOM	12.9 Ω·nC - balances conduction efficiency and gate drive loss for optimal 100–300 kHz operation
Industrial-grade qualification	JEDEC J-STD-020 & JESD22 compliant - rated for continuous operation from –55 °C to +150 °C junction temperature
Pb-free & halogen-free	RoHS-compliant plating and mold compound - meets IPC-J-STD-609A Class 1 moisture sensitivity (MSL 1)

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3 kW LLC resonant DC-DC converter for 48 V intermediate bus generation.

IC Role / Device Role / Timing Role: High-side synchronous switch operating at 250 kHz with ZVS turn-on enabled by body diode reverse recovery characteristics.

Use Value: Achieves >96.5 % full-load efficiency and <65 °C case temperature rise due to low E_oss and R_thJC = 0.83 °C/W.

Use Scenario: Active clamp forward or phase-shifted full-bridge switch in -48 V telecom rectifier with 380 V DC input.

IC Role / Device Role / Timing Role: Main power switch handling 15 A RMS current with repetitive avalanche capability during short-circuit fault conditions.

Use Value: Survives >10,000 cycles of 0.70 mJ repetitive avalanche energy without parameter drift or failure.

LCD TV Backlight Inverter

Industrial Motor Drive

Use Scenario: Half-bridge switch in resonant inverter driving CCFL or LED backlight arrays at 50–100 kHz.

IC Role / Device Role / Timing Role: Fast-switching power transistor managing burst-mode dimming transitions with minimal EMI from controlled dv/dt.

Use Value: Enables <150 mVpp output ripple and <20 dB lower conducted EMI vs. standard SJ-MOSFETs due to reduced E_oss and smooth body diode turn-off.

Use Scenario: Inverter leg switch in 3-phase 7.5 kW servo drive operating at 16 kHz PWM with regenerative braking.

IC Role / Device Role / Timing Role: Low-loss switching element handling bidirectional current flow during motor regeneration via body diode conduction.

Use Value: Reduces brake resistor sizing by 35 % through efficient energy return to DC bus using ultra-low Q_rr and high di/dt tolerance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R190CFD	Same die, TO-247 package - R_thJC = 0.83 °C/W but higher mounting torque (60 Ncm) and larger footprint	Better suited for forced-air-cooled industrial inverters requiring mechanical robustness and higher P_tot	Select when heatsink interface demands screw-mount reliability and thermal cycling exceeds 10,000 cycles
IPP65R190CFD	Same die, TO-220 package - R_thJC = 0.83 °C/W but limited to 11 A continuous current (T_C = 100 °C) due to lower thermal mass	Targeted at cost-sensitive AC-DC adapters and lighting ballasts with passive cooling	Choose for space-constrained consumer-grade designs where D²PAK reflow assembly is not available

Compared with IPW65R190CFD and IPP65R190CFD, IPI65R190CFDXKSA2 offers identical electrical performance in a surface-mount D²PAK package optimized for automated PCB assembly, thermal performance matching TO-247, and compatibility with high-reliability industrial reflow profiles - making it ideal for volume-manufactured server and telecom power modules.

Availability

IPI65R190CFDXKSA2 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV backlight inverters, and industrial motor drives requiring stable component supply across multi-year production programs.

Supply support for IPI65R190CFDXKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D centers and ISO/TS 16949-certified wafer fabs.

The CoolMOS™ CFD2 product line was engineered specifically for high-efficiency, high-reliability resonant and soft-switching power conversion - targeting datacenter, telecom infrastructure, and industrial automation systems demanding >96 % efficiency and >10-year field life.

FAQ

What is the maximum continuous drain current at T_C = 100 °C?

The maximum continuous drain current for IPI65R190CFDXKSA2 is 11.0 A at case temperature T_C = 100 °C, as specified in Table 2 of the Rev. 2.7 datasheet. This rating assumes proper PCB copper area (6 cm²) and vertical mounting per JEDEC standards, and is limited by junction temperature T_J = 150 °C.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage V_GS(th) of 3.5–4.5 V and is fully enhanced at V_GS = 10 V. A gate drive voltage of 0 V is sufficient for turn-off; applying –5 V is unnecessary and not recommended, as the absolute maximum V_GS is ±20 V static and ±30 V AC.

Can IPI65R190CFDXKSA2 replace standard 650 V SJ-MOSFETs in existing PFC circuits?

Yes - its 0.19 Ω R_DS(on), 68 nC Q_g, and 5.7 µJ E_oss provide measurable improvement in boost PFC efficiency (>0.3 % at full load) and thermal margin. However, gate drive loop inductance must be minimized (<5 nH) to avoid oscillation due to its fast switching edge (t_r = 8.4 ns, t_f = 6.4 ns).

What is the peak diode reverse recovery current I_RRM under typical operating conditions?

The peak reverse recovery current I_RRM is 7.5 A, measured at V_D = 400 V, I_F = 11.0 A, and di/dt = 100 A/µs (Table 9). Under actual resonant conditions with di/dt = 900 A/µs, I_RRM remains within specification due to the device's optimized body diode doping profile and charge control.

IPI65R190CFDXKSA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD2

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 17.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 7.3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 700µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1850 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 151W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI65R190CFDXKSA2 FAQ

1.How can I place an order for IPI65R190CFDXKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI65R190CFDXKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI65R190CFDXKSA2 reliable?

The price and inventory of IPI65R190CFDXKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI65R190CFDXKSA2 is usually 5 days.

3.What payment methods are accepted for IPI65R190CFDXKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI65R190CFDXKSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI65R190CFDXKSA2?

IPI65R190CFDXKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI65R190CFDXKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI65R190CFDXKSA2?

For technical support, including IPI65R190CFDXKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI65R190CFDXKSA2 requirements.

6.How does Aetrix verify that IPI65R190CFDXKSA2 is sourced from the original manufacturer or authorized distributors?

All IPI65R190CFDXKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI65R190CFDXKSA2 meets industry standards.

7.What is the process for return or replacement of IPI65R190CFDXKSA2?

All IPI65R190CFDXKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPI65R190CFDXKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI65R190CFDXKSA2 part is unused and in its original packaging.

Return procedure for IPI65R190CFDXKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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