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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP05CN10L G

Name: IPP05CN10L G
Brand: Infineon Technologies
SKU: IPP05CN10L G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP05CN10L G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP05CN10L G.pdf

Description:: MOSFET N-CH 100V 100A TO220-3

Quantity:: RFQ Add To RFQ list

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Inventory:7,761

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Product details

Overview

IPP05CN10L G from Infineon Technologies is an N-channel logic-level power MOSFET optimized for high-frequency switching and synchronous rectification in DC-DC converters and motor drives. It delivers 100 V V_DS, 5.1 mΩ R_DS(on) at 10 V_GS, 100 A continuous drain current, and operates up to 175 °C junction temperature.

For engineers reviewing the IPP05CN10L G datasheet, IPP05CN10L G pinout, IPP05CN10L G application, or IPP05CN10L G equivalent, key selection criteria include gate charge (Q_g = 163 nC), thermal resistance (R_thJC = 0.5 K/W), diode recovery performance (t_rr = 106 ns, Q_rr = 285 nC), and logic-level drive compatibility (V_GS(th) typ. 1.85 V).

Technical Context

This OptiMOS®2 device uses trench-gate silicon technology to achieve low R_DS(on) × Q_g figure-of-merit (FOM), enabling high-efficiency operation in hard-switched topologies. Its 4.5 V gate threshold and 4.8 mΩ R_DS(on) at V_GS = 4.5 V support direct microcontroller drive without level-shifting.

The MOSFET integrates a fast, low-Q_rr body diode with 0.97 V forward voltage at 100 A and 25 °C, making it suitable for synchronous rectification where reverse recovery losses must be minimized. Thermal design is enabled by its low junction-to-case resistance (0.5 K/W) and JEDEC-qualified 175 °C operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V and 60 V bus systems with margin for transients
R_DS(on) max	5.1 mΩ at V_GS = 10 V, T_j = 25 °C - enables <1 W conduction loss at 100 A
I_D continuous	100 A at T_C = 25 °C - rated for high-current output stages with adequate heatsinking
Q_g	163 nC - determines gate driver power requirement and switching speed trade-off
t_rr	106 ns - limits reverse recovery losses in synchronous buck converters
R_thJC	0.5 K/W - allows precise junction temperature estimation from case measurement
V_GS(th)	1.2–2.4 V - ensures reliable turn-on with 3.3 V or 5 V logic-level controllers

Pinout & Package

IPP05CN10L G is housed in a PG-TO220-3 package with isolated mounting hole, standard TO-220 footprint, and drain-connected tab for direct heatsink attachment.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to low-side return path
Pin 2 (Gate)	Control input	Receives logic-level voltage; requires <163 nC charge for full enhancement
Pin 3 (Drain)	Power output / high-side switch node	Internally connected to metal tab; electrically tied to heatsink and PCB copper area

Key Features

Feature	Design Value
N-channel logic-level gate	Turns on fully with 4.5 V drive - eliminates need for gate driver IC in many 3.3 V/5 V control systems
Low R_DS(on) × Q_g FOM	~830 mΩ·nC - balances conduction and switching losses for high-frequency (>100 kHz) operation
175 °C rated junction	Enables operation in sealed enclosures or high-ambient environments without derating
Fast body diode	t_rr = 106 ns, Q_rr = 285 nC - reduces shoot-through risk and EMI in synchronous rectifiers
Pb-free, RoHS-compliant	Meets EU Directive 2011/65/EU and JEDEC J-STD-20 reflow profile requirements

Applications

Server VRMs

Industrial Motor Drives

Use Scenario: High-density 48 V input, 1 V/100 A output buck converter supplying CPU core power.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in multiphase interleaved topology.

Use Value: 5.1 mΩ R_DS(on) and 106 ns t_rr reduce conduction and recovery losses, improving efficiency by >1.2% at full load versus older OptiMOS generations.

Use Scenario: Inverter stage of 3 kW BLDC motor drive operating in harsh ambient conditions.

IC Role / Device Role / Timing Role: High-current half-bridge switch with integrated freewheeling diode.

Use Value: 175 °C rating and 0.5 K/W R_thJC allow sustained 100 A operation without forced air cooling, reducing system BOM cost.

Telecom Power Supplies

Automotive DC-DC Converters

Use Scenario: 54 V input, 12 V/30 A isolated forward converter for base station subsystems.

IC Role / Device Role / Timing Role: Primary-side active clamp switch and secondary-side synchronous rectifier.

Use Value: 100 V V_DS withstands 54 V bus + 40 V transient spikes; Q_g = 163 nC enables clean 500 kHz switching with minimal gate drive loss.

Use Scenario: 12 V/48 V bidirectional DC-DC converter in 48 V mild hybrid vehicle architecture.

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge (DAB) topology with reverse conduction capability.

Use Value: Body diode V_SD = 0.97 V at 100 A minimizes forward drop during regenerative braking mode, increasing energy recovery efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1405PBF	R_DS(on) = 5.3 mΩ @ 10 V_GS; Q_g = 190 nC; no 175 °C rating	Limited to 150 °C operation; higher switching loss due to +16% Q_g	Acceptable for lower-frequency (<100 kHz), lower-temperature designs where gate drive margin exists
STP110N10F7	R_DS(on) = 4.8 mΩ @ 10 V_GS; Q_g = 140 nC; 100 V rating; 175 °C qualified	Slightly lower R_DS(on) but reduced avalanche energy (E_AS = 520 mJ vs. 826 mJ)	Better for high-efficiency, low-loss designs; less robust in unclamped inductive switching scenarios

Compared with IRF1405PBF and STP110N10F7, IPP05CN10L G offers superior avalanche ruggedness and tighter V_GS(th) distribution, making it preferred for automotive-grade and high-reliability industrial power stages where transient overvoltage immunity and consistent turn-on timing are critical.

Availability

IPP05CN10L G is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom power supplies, and automotive DC-DC converters requiring stable component supply and long-term lifecycle support.

Supply support for IPP05CN10L G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOS®2 family, designed specifically for high-efficiency, high-current, high-frequency switching applications in server, telecom, and industrial power conversion systems.

FAQ

What is the maximum safe operating temperature for IPP05CN10L G?

The IPP05CN10L G is qualified for continuous operation up to 175 °C junction temperature per JEDEC standards. Its thermal resistance R_thJC is 0.5 K/W, so maintaining case temperature ≤150 °C ensures safe operation under full 100 A load. Derating curves in the datasheet confirm usable current at elevated ambient temperatures when heatsink design meets specified copper area (6 cm²).

Can IPP05CN10L G be driven directly by a 3.3 V microcontroller GPIO?

Yes - its logic-level gate threshold (V_GS(th) = 1.2–2.4 V) and low R_DS(on) at 4.5 V (4.8 mΩ) enable full enhancement with 3.3 V drive, though switching speed will be reduced due to incomplete Miller plateau crossing. For optimal efficiency, a dedicated gate driver is recommended, especially above 100 kHz.

Does IPP05CN10L G have avalanche capability, and how is it rated?

Yes - IPP05CN10L G is fully rated for unclamped inductive switching with E_AS = 826 mJ (I_D = 100 A, R_GS = 25 Ω). This rating is verified per JEDEC JESD22-A110 and applies across the full temperature range up to 175 °C, supporting robust operation in flyback, active clamp, and motor phase-leg configurations.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode has V_SD = 0.97 V at 100 A and t_rr = 106 ns, offering lower forward drop than most 100 V Schottkys while avoiding their leakage and temperature sensitivity issues. Though not as fast as SiC Schottkys, its Q_rr = 285 nC and soft recovery reduce EMI and stress in synchronous rectification, especially below 300 kHz.

IPP05CN10L G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.1mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 163 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 15600 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP05CN10L G FAQ

1.How can I place an order for IPP05CN10L G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP05CN10L G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP05CN10L G reliable?

The price and inventory of IPP05CN10L G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP05CN10L G is usually 5 days.

3.What payment methods are accepted for IPP05CN10L G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP05CN10L G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP05CN10L G?

IPP05CN10L G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP05CN10L G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP05CN10L G?

For technical support, including IPP05CN10L G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP05CN10L G requirements.

6.How does Aetrix verify that IPP05CN10L G is sourced from the original manufacturer or authorized distributors?

All IPP05CN10L G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP05CN10L G meets industry standards.

7.What is the process for return or replacement of IPP05CN10L G?

All IPP05CN10L G units undergo pre-shipment inspection (PSI). If there is an issue with IPP05CN10L G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP05CN10L G part is unused and in its original packaging.

Return procedure for IPP05CN10L G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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