Infineon Technologies IPB035N12NM6ATMA1

Overview

IPB035N12NM6ATMA1 from Infineon Technologies is an N-channel 120 V OptiMOSTM 6 power MOSFET in D²PAK (PG-TO263-3) package, featuring 3.5 mΩ max R_DS(on), 138 A continuous drain current at T_C=25 °C, 58 nC total gate charge, and 263 nC reverse recovery charge at 1000 A/µs. It is optimized for high-frequency synchronous rectification in industrial DC-DC converters.

For engineers reviewing the IPB035N12NM6ATMA1 datasheet, IPB035N12NM6ATMA1 pinout, IPB035N12NM6ATMA1 application, or IPB035N12NM6ATMA1 equivalent, key selection criteria include its low Q_g×R_DS(on) figure-of-merit, high avalanche energy rating (492 mJ), and 175 °C maximum junction temperature - critical for compact, thermally constrained power stages.

Technical Context

This device implements a trench-based silicon MOSFET architecture with optimized cell pitch and deep-trench gate structure to minimize conduction and switching losses simultaneously. Its low Q_rr (263 nC @ 1000 A/µs) and fast trr (29–58 ns) reduce diode commutation loss in hard-switched and resonant topologies.

The gate threshold voltage (2.6–3.6 V) enables robust 5 V or 8 V gate drive compatibility, while the 0.61 °C/W junction-to-case thermal resistance supports high-power density mounting on 6 cm² copper pads. The device is fully qualified per JEDEC JESD47 for industrial applications.

Key Specifications

Pinout & Package

IPB035N12NM6ATMA1 uses the PG-TO263-3 (D²PAK) package with exposed drain tab for thermal and electrical connection. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 120 V power MOSFET applications.

Compared with STL220N10F7 and IXFH32N120P, IPB035N12NM6ATMA1 uniquely balances 120 V rating, sub-4 mΩ R_DS(on), and <60 nC Q_g - making it optimal for high-efficiency, high-frequency 48–60 V power conversion where both conduction and switching losses must be minimized.

Availability

IPB035N12NM6ATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, solar microinverters, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for IPB035N12NM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOSTM 6 family - engineered specifically for high-efficiency, high-frequency power conversion in data center, renewable energy, and e-mobility applications where low R_DS(on), low Q_g, and robust avalanche performance are mandatory.

FAQ

What is the maximum continuous drain current for IPB035N12NM6ATMA1 at 100 °C case temperature?

The maximum continuous drain current is 106 A at T_C = 100 °C and V_GS = 10 V, as specified in Table 2 of the Rev. 2.0 datasheet. This reflects thermal derating due to reduced heat dissipation capacity at elevated case temperatures, and must be verified against actual PCB layout and cooling conditions.

Does IPB035N12NM6ATMA1 have integrated gate protection?

No, IPB035N12NM6ATMA1 does not include integrated gate protection diodes or Zener clamps. External gate resistor and TVS protection (e.g., 12 V Zener between gate and source) are recommended to prevent overvoltage damage during fast switching or ESD events, especially in high-dV/dt environments.

Can IPB035N12NM6ATMA1 be used in parallel configurations?

Yes, it supports paralleling due to its positive R_DS(on) temperature coefficient (confirmed in Diagram 9), which promotes current sharing. However, matched gate drive loop inductance and symmetrical PCB layout are essential; use individual 10 Ω gate resistors and Kelvin source connections to avoid oscillation or current imbalance.

What is the typical reverse diode forward voltage at 86 A and 25 °C junction temperature?

The typical reverse diode forward voltage (V_SD) is 0.90 V at I_F = 86 A and T_j = 25 °C, as stated in Table 7. At 175 °C, V_SD drops to ~0.75 V, confirming favorable thermal behavior for synchronous rectification duty cycles with significant body diode conduction.