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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB180P04P403ATMA1

Name: IPB180P04P403ATMA1
Brand: Infineon Technologies
SKU: IPB180P04P403ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB180P04P403ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IPB180P04P403ATMA1.pdf

Description:: MOSFET P-CH 40V 180A TO263-7

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Product details

Overview

IPB180P04P403ATMA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET optimized for high-current automotive and industrial switching applications, featuring -40 V V_DS, 2.8 mΩ R_DS(on) at -100 A and -10 V V_GS, 175 °C maximum junction temperature, and AEC-Q101 qualification. It delivers robust avalanche performance (90 mJ E_AS) and supports high-pulse operation (-720 A I_D,pulse) in motor control inverters.

For engineers reviewing the IPB180P04P403ATMA1 datasheet, IPB180P04P403ATMA1 pinout, IPB180P04P403ATMA1 application, or IPB180P04P403ATMA1 equivalent, key selection criteria include R_DS(on) stability over temperature, gate charge profile for PWM efficiency, thermal resistance (R_thJC = 1.0 K/W), and AEC-compliant reliability for under-hood power stages.

Technical Context

This OptiMOS®-P2 device uses trench-based silicon technology to achieve low on-resistance with controlled gate charge (Q_g = 190–250 nC) and fast switching (t_r = 31 ns, t_f = 81 ns). Its P-channel architecture enables high-side load switching without level-shifting circuitry.

The integrated body diode exhibits V_SD = -1.0 to -1.3 V at -100 A and t_rr = 83 ns, supporting synchronous rectification and freewheeling in H-bridge topologies. Thermal design is enabled by its PG-TO263-7-3 package with exposed drain tab and validated R_thJC of 1.0 K/W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum blocking voltage for 12 V/24 V automotive battery systems
R_DS(on)	2.8 mΩ max at -100 A, -10 V V_GS - Enables <1.5 W conduction loss at 100 A
I_D continuous	-180 A at T_C = 25 °C - Supports high-power motor drives and DC-DC phases
E_AS	90 mJ - Confirmed single-pulse avalanche energy for inductive load turn-off safety
Q_g	190–250 nC - Determines gate driver current requirement and switching loss trade-off
R_thJC	1.0 K/W - Enables direct heatsink mounting with predictable junction-to-case thermal path
T_j max	+175 °C - Rated for under-hood environments and sustained high-temperature operation

Pinout & Package

IPB180P04P403ATMA1 is housed in a PG-TO263-7-3 surface-mount package with an exposed drain tab for thermal and electrical connection. The package features 7 terminals and is RoHS-compliant and MSL1-rated for lead-free reflow up to 260 °C.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control input requiring -10 V for full enhancement; gate capacitance C_iss = 13.6–17.6 nF
2, 3, 5, 6, 7	Source	Common return path for source current; electrically tied internally and externally
4 + Tab	Drain	Main power output terminal; tab provides low-inductance, high-current drain connection and thermal interface

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements
100% avalanche tested	Each unit subjected to single-pulse E_AS stress, ensuring ruggedness in inductive switching
Green package (RoHS)	Lead-free, halogen-free construction compliant with EU Directive 2011/65/EU
High-temperature operation	Rated for continuous operation up to +175 °C junction temperature
Low R_DS(on) × Q_g figure-of-merit	Optimized for high-frequency, high-efficiency switching in 100–200 kHz converters

Applications

Automotive Motor Control

Industrial DC-DC Converters

Use Scenario: High-side switch in 48 V BLDC motor inverter for electric power steering (EPS).

IC Role / Device Role / Timing Role: P-channel MOSFET providing load disconnect and regenerative braking control with no external level shifter.

Use Value: 2.8 mΩ R_DS(on) reduces conduction loss by >30% vs. comparable 5 mΩ devices at 120 A, improving system efficiency and thermal margin.

Use Scenario: Primary-side synchronous rectifier in isolated 1 kW telecom DC-DC module.

IC Role / Device Role / Timing Role: Low-R_DS(on) P-channel switch replacing N-channel + driver, simplifying gate drive layout.

Use Value: 1.0 K/W R_thJC enables direct heatsink mounting, reducing thermal interface layers and lowering peak T_j by ~15 °C at full load.

Off-Board Battery Management

Commercial HVAC Blower Drives

Use Scenario: High-current discharge FET in 24 V lithium-ion battery pack protection circuit.

IC Role / Device Role / Timing Role: Overcurrent and short-circuit protection switch with integrated avalanche capability.

Use Value: 90 mJ E_AS rating ensures reliable fault clearing during sudden load dumps without failure.

Use Scenario: Phase-leg switch in variable-speed HVAC blower inverter (230 V AC input, 48 V DC bus).

IC Role / Device Role / Timing Role: High-current, high-temperature P-channel switch operating continuously at 150 A and 150 °C T_j.

Use Value: +175 °C T_j rating and AEC qualification provide extended lifetime and field reliability in sealed, thermally constrained enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-current MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB180N04LGATMA1	N-channel variant with identical R_DS(on) (2.8 mΩ), but requires gate driver with high-side capability	Suitable where bootstrap or isolated gate drive is already implemented	Select when system-level gate drive architecture favors N-channel topology
IRFP4368PBF	Higher R_DS(on) (3.8 mΩ), larger TO-247 package, no AEC qualification	Acceptable for non-automotive industrial use with relaxed qualification and thermal constraints	Choose only if AEC-Q101 compliance and compact SMD footprint are not required

Compared with IPB180N04LGATMA1, this P-channel part eliminates level-shifting complexity; versus IRFP4368PBF, it offers tighter R_DS(on), smaller footprint, and automotive-grade reliability-critical for space-constrained, high-reliability power stages.

Availability

IPB180P04P403ATMA1 is available at Aetrix Electronics and suitable for automotive motor control, industrial DC-DC conversion, and off-board battery management requiring stable component supply, long-term lifecycle support, and AEC-Q101 traceability.

Supply support for IPB180P04P403ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This device belongs to the OptiMOS®-P2 product line, engineered specifically for high-efficiency, high-reliability P-channel switching in automotive power distribution and motor control systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current is -131 A at T_C = 100 °C and V_GS = -10 V, limited by thermal resistance and bondwire capacity. This value reflects derating due to reduced heat dissipation at elevated case temperatures and must be verified against actual PCB layout and heatsink performance.

Is the body diode suitable for synchronous rectification?

Yes-the integrated body diode has V_SD = -1.0 to -1.3 V at -100 A and t_rr = 83 ns, enabling efficient freewheeling and synchronous rectification in half-bridge and H-bridge configurations without external diodes.

Does this MOSFET require a gate resistor for safe switching?

A gate resistor is recommended to control dV/dt and prevent oscillation; typical values range from 2.2 Ω to 10 Ω depending on driver strength and layout parasitics. The gate charge (Q_g = 190–250 nC) determines optimal R_G to balance switching speed and EMI.

Can IPB180P04P403ATMA1 replace N-channel MOSFETs in existing designs?

It can replace N-channel devices in high-side configurations where level-shifting circuitry is undesirable, but gate drive voltage polarity must be inverted (negative V_GS). Layout changes may be needed to accommodate the PG-TO263-7-3 footprint and drain-tab thermal interface.

IPB180P04P403ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 410µA

Gate Charge (Qg) (Max) @ Vgs:: 250 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 17640 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-3

IPB180P04P403ATMA1 FAQ

1.How can I place an order for IPB180P04P403ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB180P04P403ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB180P04P403ATMA1 reliable?

The price and inventory of IPB180P04P403ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB180P04P403ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB180P04P403ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB180P04P403ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB180P04P403ATMA1?

IPB180P04P403ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB180P04P403ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB180P04P403ATMA1?

For technical support, including IPB180P04P403ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB180P04P403ATMA1 requirements.

6.How does Aetrix verify that IPB180P04P403ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB180P04P403ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB180P04P403ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB180P04P403ATMA1?

All IPB180P04P403ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB180P04P403ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB180P04P403ATMA1 part is unused and in its original packaging.

Return procedure for IPB180P04P403ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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