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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BTS282Z E3230

Name: BTS282Z E3230
Brand: Infineon Technologies
SKU: BTS282Z E3230
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BTS282Z E3230

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-7

Datasheet:: BTS282Z E3230.pdf

Description:: MOSFET N-CH 49V 80A TO220-7

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BTS282Z E3230 from Infineon Technologies is a Speed TEMPFET™ monolithic N-channel logic-level power MOSFET with integrated potential-free thyristor-based temperature sensor and overtemperature protection. It features 49 V V_DS, 6.5 mΩ R_DS(on) at V_GS = 10 V, 80 A continuous drain current (T_C = 100 °C), fast switching up to 1 MHz, and thermal trip at 150–170 °C. Used in automotive engine control modules for high-side load switching with real-time junction temperature monitoring.

For engineers reviewing the BTS282Z E3230 datasheet, BTS282Z E3230 pinout, BTS282Z E3230 application, or BTS282Z E3230 equivalent, key selection criteria include its dual-function integration (power switch + self-resetting thermal sensor), avalanche rating (2 J), P-TO220-7-3 package with three-source-pin configuration, and ISO 10483-compliant 36 A nominal load current at 85 °C case temperature.

Technical Context

The BTS282Z integrates a robust N-channel MOSFET and a thyristor-type temperature sensor sharing no common electrical node-enabling galvanically isolated thermal sensing. Its gate threshold voltage (1.2–2.0 V) supports direct microcontroller drive without level-shifting, while the sensor's thermal trip point (150–170 °C) and sub-µs turn-off time (<2.5 µs) enable rapid fault shutdown independent of gate control.

Dynamic performance is optimized for high-frequency PWM: typical C_iss = 4250 pF, Q_g(total) = 195 nC, and t_r/t_f < 60 ns under 4.5 V gate drive. The device operates across –40 to +175 °C junction temperature, with thermal resistance R_thJC = 0.5 K/W enabling high-power density designs on minimal copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	49 V - Maximum blocking voltage compatible with 42 V automotive systems and 36 V industrial rails
R_DS(on)	6.5 mΩ @ V_GS = 10 V - Enables ≤50 mW conduction loss at 80 A, critical for thermally constrained ECUs
I_D(continuous)	80 A @ T_C = 100 °C - Sustains high-current loads (e.g., fuel injectors, solenoids) without external heatsink
E_AS	2 J - Avalanche energy rating allows safe operation during inductive load switching transients
T_TS(on)	150–170 °C - Programmable thermal trip range ensures precise junction overtemperature cutoff before silicon damage
Q_g(total)	155–232 nC - Gate charge supports efficient 1 MHz PWM with standard gate drivers (e.g., 1EDN7512B)
t_off (sensor)	0.5–2.5 µs - Fast thermal shutdown response enables cycle-by-cycle protection in safety-critical applications

Pinout & Package

Packaged in P-TO220-7-3 (7-pin vertical mount, 3-source pins, tab-drain), this device uses a thermally enhanced leadframe with isolated sensor terminals to prevent interference between power and sensing paths.

Pin/Terminal	Circuit Role	Design Meaning
1, 6, 7	Source (S)	Three parallel source connections reduce bond-wire inductance and improve current sharing in high-dI/dt switching
2	Gate (G)	Logic-level input (V_GS(th) = 1.2–2.0 V); compatible with 3.3 V/5 V MCU outputs without buffer stage
3	Anode (A) - Temp Sensor	Thyristor anode terminal; forward-biased to trigger thermal latch when junction exceeds trip threshold
4 + TAB	Drain (D)	Main power path; tab serves as primary thermal and electrical connection to heatsink or PCB copper pour
5	Cathode (K) - Temp Sensor	Thyristor cathode; reset pulse applied here to deactivate latched sensor state after overtemperature event

Key Features

Feature	Design Value
Integrated temperature sensor	Galvanically isolated thyristor structure with 150–170 °C trip range and self-reset capability via K-pin pulse
Logic-level gate drive	V_GS(th) = 1.2–2.0 V enables direct interface with low-voltage MCUs (e.g., TC3xx, S32K) without level shifters
Avalanche-rated operation	2 J single-pulse E_AS supports reliable switching of inductive loads (e.g., valves, actuators) without snubbers
High-current pinning	Three-source-pin layout and thick bond wires sustain 320 A pulsed drain current with minimal voltage overshoot
Analog driving capability	Linear-mode operation supported by stable R_DS(on) vs. T_j characteristics (±15% variation from –40 to +150 °C)

Applications

Engine Control Unit (ECU) High-Side Driver

Fuel Injector Driver

Use Scenario: Switching 12 V/42 V solenoid loads in gasoline/diesel engine management systems under harsh ambient conditions (–40 to +125 °C).

IC Role / Device Role / Timing Role: High-side power switch with embedded thermal trip; replaces discrete MOSFET + external thermal IC + protection logic.

Use Value: Eliminates 3–5 external components while providing sub-µs thermal shutdown-reducing BOM cost and PCB footprint by >30%.

Use Scenario: Driving peak-current fuel injectors (up to 80 A) with precise PWM timing and short-circuit detection.

IC Role / Device Role / Timing Role: Analog-capable power switch with fast turn-on/off (t_d(on) ≤ 45 ns) and integrated overcurrent/overtemperature dual-fault response.

Use Value: Enables closed-loop injector current control and immediate shutdown on coil short, meeting ASIL-B functional safety requirements.

Transmission Solenoid Controller

Electric Power Steering (EPS) Motor Phase Switch

Use Scenario: Controlling hydraulic pressure solenoids in automatic transmissions exposed to vibration, oil immersion, and wide temperature swings.

IC Role / Device Role / Timing Role: Robust high-current switch with avalanche energy rating (2 J) and IP67-compatible thermal protection.

Use Value: Survives repeated inductive flyback events and prevents thermal runaway during stuck-solenoid faults-extending system lifetime beyond 15 years.

Use Scenario: Low-side or high-side phase switching in 48 V EPS motor inverters requiring compact, thermally resilient power stages.

IC Role / Device Role / Timing Role: High-efficiency MOSFET with 6.5 mΩ R_DS(on) and 0.5 K/W R_thJC enabling >98% efficiency at 60 A continuous.

Use Value: Reduces heatsink mass by 40% versus TO-263 alternatives while maintaining ASIL-D compliant thermal margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-integration automotive power switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BTS282L E3230	Same die, P-TO220-7-180 package with 180° pin rotation; identical electrical specs and thermal trip behavior	Requires revised PCB layout due to mirrored pinout; same thermal performance and functional compatibility	Select when mechanical mounting constraints favor horizontal orientation or alternate heatsink interface
IPD95R1K2P7ATMA1	650 V SiC MOSFET, no integrated sensor; R_DS(on) = 1.2 Ω; higher voltage rating but no thermal protection	Suitable only for high-voltage traction inverters-not for 12/42 V thermal-protection-critical loads	Choose only if system requires >400 V blocking and external thermal monitoring is already implemented

Compared with BTS282L E3230, the E3230 variant offers identical functionality in a different mechanical form factor; versus IPD95R1K2P7ATMA1, it trades off voltage capability for integrated safety-critical thermal sensing-making it uniquely suited for ISO 26262 ASIL-B/C automotive power stages where component count and fault response time are decisive.

Availability

BTS282Z E3230 is available at Aetrix Electronics and suitable for automotive engine control units, transmission control modules, and electric power steering systems requiring stable component supply, long-term lifecycle support, and AEC-Q101 qualified parts.

Supply support for BTS282Z E3230 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification to AEC-Q100/Q101 standards.

The Speed TEMPFET™ product line delivers monolithically integrated power switches with embedded thermal sensing for automotive and industrial applications demanding functional safety, reduced system complexity, and high reliability under extreme thermal stress.

FAQ

What is the thermal trip mechanism of the BTS282Z E3230?

The device uses a thyristor-based temperature sensor with anode (Pin 3) and cathode (Pin 5) terminals. When junction temperature reaches 150–170 °C, the thyristor latches ON, pulling the gate low via internal circuitry to disable the MOSFET. A 100 µs reset pulse applied to Pin 5 deactivates the latch, restoring normal operation once temperature falls below hysteresis threshold.

Can the BTS282Z E3230 be used in linear (analog) mode?

Yes-the datasheet explicitly states "Analog driving possible" and provides output characteristics (ID vs. VDS) across multiple VGS levels. Its RDS(on) stability over temperature (±15% from –40 to +150 °C) and low thermal resistance (0.5 K/W) make it suitable for precision current regulation in active loads like proportional solenoids or LED drivers.

How does the three-source-pin configuration improve performance?

The parallel Source pins (1, 6, 7) reduce total source inductance and bond-wire resistance, minimizing voltage spikes during high dI/dt switching (e.g., 320 A pulsed). This improves EMI behavior, increases short-circuit ruggedness, and enhances current sharing uniformity-critical for automotive applications subject to ISO 7637-2 transient immunity testing.

Is the temperature sensor electrically isolated from the MOSFET?

Yes-the sensor is a potential-free thyristor structure with no shared terminals between its anode/cathode (Pins 3 and 5) and the MOSFET's gate/drain/source. This galvanic isolation prevents noise coupling and enables independent biasing, allowing accurate thermal monitoring even during high-voltage switching transients on the drain node.

BTS282Z E3230 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TEMPFET®

Package/Case:: TO-220-7

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 49 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 36A, 10V

Vgs(th) (Max) @ Id:: 2V @ 240µA

Gate Charge (Qg) (Max) @ Vgs:: 232 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4800 pF @ 25 V

FET Feature:: Temperature Sensing Diode

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: P-TO220-7-230

BTS282Z E3230 FAQ

1.How can I place an order for BTS282Z E3230 through Aetrix?

Please submit a Request for Quotation (RFQ) for BTS282Z E3230 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BTS282Z E3230 reliable?

The price and inventory of BTS282Z E3230 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BTS282Z E3230 is usually 5 days.

3.What payment methods are accepted for BTS282Z E3230?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BTS282Z E3230 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BTS282Z E3230?

BTS282Z E3230 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BTS282Z E3230 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BTS282Z E3230?

For technical support, including BTS282Z E3230 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BTS282Z E3230 requirements.

6.How does Aetrix verify that BTS282Z E3230 is sourced from the original manufacturer or authorized distributors?

All BTS282Z E3230 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BTS282Z E3230 meets industry standards.

7.What is the process for return or replacement of BTS282Z E3230?

All BTS282Z E3230 units undergo pre-shipment inspection (PSI). If there is an issue with BTS282Z E3230, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BTS282Z E3230 part is unused and in its original packaging.

Return procedure for BTS282Z E3230:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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