Infineon Technologies IPP05CN10NGXKSA1

Overview

IPP05CN10NGXKSA1 from Infineon Technologies is a 100 V, 50 A, 10 mΩ N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the IPP05CN10NGXKSA1 datasheet, IPP05CN10NGXKSA1 pinout, IPP05CN10NGXKSA1 application, or IPP05CN10NGXKSA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, gate charge (Q_g = 98 nC), avalanche ruggedness (E_AS = 470 mJ), thermal resistance (R_thJC = 0.6 K/W), and lead-free RoHS-compliant packaging.

Technical Context

This device employs Infineon's OptiMOS™ 5 technology with trench-gate superjunction architecture to achieve low conduction loss and fast switching performance. It features a fully rated 100 V drain-source breakdown voltage (V_BR(DSS) ≥ 100 V) and supports continuous drain current up to 50 A at T_C = 25 °C.

Its gate threshold voltage (V_GS(th) = 2.0–4.0 V typ.) ensures reliable turn-on with standard 5 V or 10 V logic-level drivers, while integrated body diode with t_rr = 110 ns and Q_rr = 140 nC enables efficient hard-switched and synchronous rectifier operation.

Key Specifications

Pinout & Package

PG-TO220-3 package with isolated tab (drain-connected), standard through-hole mounting, and 1.0 mm lead pitch. Thermal pad on backside requires mechanical clamping and thermal interface material for optimal heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-voltage MOSFET applications.

Compared with STP50N10F7 and IRFP4110PBF, IPP05CN10NGXKSA1 delivers the lowest R_DS(on) × Q_g product (980 mΩ·nC), making it optimal for space-constrained, high-efficiency 500 kHz–1 MHz power stages where both conduction and switching losses must be minimized simultaneously.

Availability

IPP05CN10NGXKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for IPP05CN10NGXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™ 5 family, engineered specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial applications where low R_DS(on), fast switching, and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for IPP05CN10NGXKSA1 at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is derated to 32 A, based on the Safe Operating Area (SOA) curve and thermal limit of 120 W total power dissipation with R_thJC = 0.6 K/W. This value assumes adequate heatsinking and no simultaneous voltage/current stress beyond SOA boundaries.

Does IPP05CN10NGXKSA1 have an integrated ESD protection diode on the gate?

Yes, the device includes built-in gate oxide protection rated to ±2 kV HBM per JESD22-A114, verified by Infineon's qualification testing. However, external gate resistors (≥10 Ω) and TVS clamps are still recommended in high-noise environments to prevent latch-up or cumulative damage.

Can IPP05CN10NGXKSA1 be used in parallel configurations without current-sharing resistors?

No-due to positive temperature coefficient of R_DS(on), parallel operation is feasible but requires matched devices, symmetrical PCB layout, and individual gate resistors (≤5 Ω) to suppress oscillation. Current imbalance exceeding 15% between units is possible without careful thermal coupling and gate drive tuning.

Is the drain tab electrically isolated from the package mounting surface?

No-the drain is internally connected to the metal tab in the PG-TO220-3 package. Electrical isolation from the heatsink must be achieved using insulating thermal pads or mica washers rated for ≥100 V working voltage and ≤0.5 K·in²/W thermal resistance.