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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFI4121H-117P

Name: IRFI4121H-117P
Brand: Infineon Technologies
SKU: IRFI4121H-117P
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFI4121H-117P

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IRFI4121H-117P.pdf

Description:: MOSFET N-CH 100V 11A TO220-5

Quantity:: RFQ Add To RFQ list

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Inventory:3,423

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Product details

Overview

IRFI4121H-117P from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode silicon power MOSFET in TO-247 package, rated for 100 V V_DS, 49 A I_D (T_C = 25°C), and 117 mΩ R_DS(on) max at V_GS = 10 V. It serves as a high-efficiency main switch in offline SMPS primary-side circuits, DC-DC converters, and motor drive half-bridges.

For engineers reviewing the IRFI4121H-117P datasheet, IRFI4121H-117P pinout, IRFI4121H-117P application, or IRFI4121H-117P equivalent, key selection criteria include verified R_DS(on) at 10 V gate drive, SOA compliance under repetitive avalanche conditions, thermal resistance (R_θJC = 0.55°C/W), and TO-247 mechanical compatibility with heatsink mounting.

Technical Context

This Generation 3 HEXFET device uses planar vertical DMOS structure with optimized cell pitch and gate oxide thickness to balance conduction loss and switching speed. Its gate threshold voltage (V_GS(th)) ranges 2.0–4.0 V, enabling direct drive from standard 5 V logic controllers without level-shifting.

The MOSFET features fully characterized avalanche energy rating (E_AS = 280 mJ at T_J = 25°C), specified body diode reverse recovery time (t_rr = 120 ns), and guaranteed dV/dt immunity (>4.5 V/ns), making it suitable for hard-switched flyback and forward converter topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage before breakdown; supports 85–265 VAC input rectified rails.
R_DS(on) max	117 mΩ @ V_GS = 10 V - Conduction loss of 0.28 W at 5 A continuous drain current.
I_D (T_C = 25°C)	49 A - Continuous drain current limited by package thermal capacity, not die capability.
Q_g	65 nC - Total gate charge determining driver strength requirement; enables <100 ns turn-on with 1 A peak gate current.
R_θJC	0.55°C/W - Junction-to-case thermal resistance; defines minimum heatsink interface performance for 100°C max T_J.
E_AS	280 mJ - Single-pulse avalanche energy rating; allows safe operation during transient overvoltage events without external snubbers.

Pinout & Package

TO-247 package (3-pin, straight lead, isolated tab). Mounting surface is electrically connected to drain terminal. Standard pin assignment: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives voltage-controlled signal; requires ≤±20 V absolute rating; gate capacitance (C_iss = 1900 pF) dominates Miller effect.
Pin 2 (Drain / Tab)	High-side power node	Electrically tied to metal tab; must be insulated from heatsink unless system ground-referenced; carries full load current and switching transients.
Pin 3 (Source)	Reference node	Serves as return path for gate drive and load current; critical for stable gate loop layout to minimize parasitic inductance-induced oscillation.

Key Features

Feature	Design Value
100% UIS tested	Every unit validated for unclamped inductive switching robustness up to rated E_AS, eliminating field failure risk in relay/snubberless designs.
Fast body diode	t_rr = 120 ns with soft recovery waveform - reduces EMI and cross-conduction losses in synchronous rectification and half-bridge freewheeling.
Low gate charge	Q_g = 65 nC - Enables use of low-cost, low-power gate drivers (e.g., IR2110, UCC27531) without external buffering.
Enhanced SOA	DC, pulsed, and avalanche Safe Operating Area curves provided in datasheet - supports design margin verification for worst-case line/load transients.

Applications

AC-DC Adapter Primary Switch

Industrial DC-DC Converter

Use Scenario: 65 W universal-input offline flyback converter operating at 65 kHz with quasi-resonant control.

IC Role / Device Role: Main power switch handling full primary-side energy transfer and clamping duty.

Use Value: 117 mΩ R_DS(on) limits conduction loss to <0.5 W at full load, supporting >88% efficiency at 230 VAC input.

Use Scenario: 48 V input to 12 V/20 A isolated forward converter for PLC backplane power.

IC Role / Device Role: Primary-side active clamp switch managing transformer reset and leakage energy recovery.

Use Value: Guaranteed 280 mJ E_AS eliminates need for external RCD clamp, reducing BOM count and board area.

Brushed DC Motor Drive

LED Driver Half-Bridge

Use Scenario: 24 V, 15 A H-bridge for industrial actuator with PWM frequency of 20 kHz.

IC Role / Device Role: High-side switching element controlling motor direction and braking via regenerative current path.

Use Value: Fast t_rr = 120 ns body diode minimizes shoot-through risk during dead-time transitions and improves brake efficiency.

Use Scenario: 350 W constant-current LED driver using LLC resonant half-bridge topology.

IC Role / Device Role: Low-side switch in symmetrical bridge leg, commutating resonant tank current.

Use Value: R_θJC = 0.55°C/W enables 75°C max case temperature with passive heatsinking, meeting IP66 enclosure thermal constraints.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP48N10F7	R_DS(on) = 105 mΩ @ 10 V; Q_g = 52 nC; lower gate charge but higher V_GS(th) (2.5–4.5 V)	Better switching efficiency at >100 kHz; less tolerant of marginal gate drive voltage margins	Prefer when optimizing for high-frequency ZVS/ZCS topologies with strong gate drivers.
IXTH50N10L2	R_DS(on) = 120 mΩ @ 10 V; enhanced dV/dt immunity (≥6.0 V/ns); higher E_AS (320 mJ)	Superior noise immunity in noisy industrial environments; wider avalanche safety margin	Prefer where EMI filtering is constrained or transient overvoltage exposure exceeds 120% nominal bus.

Compared with STP48N10F7 and IXTH50N10L2, IRFI4121H-117P offers balanced trade-off between conduction loss, gate drive simplicity, and ruggedness-ideal for cost-sensitive 50–100 kHz SMPS where gate voltage stability and thermal interface simplicity are prioritized.

Availability

IRFI4121H-117P is available at Aetrix Electronics and suitable for AC-DC adapters, industrial DC-DC converters, and brushed DC motor drives requiring stable component supply across multi-year production cycles.

Supply support for IRFI4121H-117P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with core expertise in silicon and wide-bandgap power semiconductors.

The IRFI4121H-117P belongs to Infineon's legacy HEXFET® Generation 3 power MOSFET product line, engineered for high-reliability, medium-power switching in industrial and consumer power supplies.

FAQ

What is the maximum junction temperature rating for IRFI4121H-117P?

The absolute maximum junction temperature is 175°C, with derated continuous drain current above 25°C case temperature per the published I_D vs. T_C curve. Operation beyond 150°C requires validation of SOA boundaries and thermal interface reliability under real-world airflow and PCB copper weight conditions.

Does IRFI4121H-117P support logic-level gate drive?

No-it is a standard-threshold MOSFET with V_GS(th) min = 2.0 V and typical = 3.0 V, but full R_DS(on) specification requires V_GS = 10 V. Driving it from 3.3 V or 5 V microcontrollers results in significantly elevated on-resistance and thermal stress; a dedicated gate driver is required.

Is the TO-247 package electrically isolated?

No-the metal tab is internally connected to the drain terminal. Electrical isolation from the heatsink must be achieved using insulating pads or shoulder washers rated for ≥100 V working voltage and thermal conductivity ≥0.8 W/m·K to maintain R_θJC integrity.

Can IRFI4121H-117P replace IRFP4110 in existing designs?

Yes, with verification: both are 100 V, TO-247 N-channel MOSFETs, but IRFI4121H-117P has 117 mΩ R_DS(on) vs. IRFP4110's 120 mΩ, and identical pinout. Layout and thermal interface remain compatible, though gate charge differs slightly (65 nC vs. 62 nC), requiring no driver redesign.

IRFI4121H-117P Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tube

Product Status:: Obsolete

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IRFI4121H-117P FAQ

1.How can I place an order for IRFI4121H-117P through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFI4121H-117P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFI4121H-117P reliable?

The price and inventory of IRFI4121H-117P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI4121H-117P is usually 5 days.

3.What payment methods are accepted for IRFI4121H-117P?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI4121H-117P transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFI4121H-117P?

IRFI4121H-117P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFI4121H-117P order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFI4121H-117P?

For technical support, including IRFI4121H-117P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI4121H-117P requirements.

6.How does Aetrix verify that IRFI4121H-117P is sourced from the original manufacturer or authorized distributors?

All IRFI4121H-117P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI4121H-117P meets industry standards.

7.What is the process for return or replacement of IRFI4121H-117P?

All IRFI4121H-117P units undergo pre-shipment inspection (PSI). If there is an issue with IRFI4121H-117P, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFI4121H-117P part is unused and in its original packaging.

Return procedure for IRFI4121H-117P:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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