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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRFS3107

Name: AUIRFS3107
Brand: Infineon Technologies
SKU: AUIRFS3107
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRFS3107

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AUIRFS3107.pdf

Description:: MOSFET N-CH 75V 195A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRFS3107 from Infineon is an automotive-grade N-channel D2-Pak (TO-263AB) HEXFET® Power MOSFET with 75V V_BRDSS, 2.5 mΩ typ. R_DS(on) at V_GS = 10 V and 140 A, 175°C maximum junction temperature, and 370 W P_D @ T_C = 25°C. It delivers ultra-low conduction loss and high-current capability for high-efficiency DC-DC converters in engine control units.

For engineers reviewing the AUIRFS3107 datasheet, AUIRFS3107 pinout, AUIRFS3107 application, or AUIRFS3107 equivalent, this page provides verified thermal resistance (R_θJC = 0.40 °C/W), avalanche energy rating (E_AS = 300 mJ), gate charge (Q_g = 160–240 nC), and diode recovery performance (t_rr = 54 ns @ T_J = 25°C) critical for automotive power stage design.

Technical Context

This MOSFET employs advanced silicon process technology to achieve low R_DS(on) per die area while maintaining robust dV/dt (14 V/ns) and dI/dt capability. Its 175°C rated junction enables operation in under-hood environments without derating below 150°C ambient.

The device supports unclamped inductive switching with repetitive avalanche up to T_Jmax, validated by E_AR curves and transient thermal impedance data (Z_thJC). Gate threshold voltage (V_GS(th) = 2.0–4.0 V) and transconductance (g_fs = 230 S) are specified across temperature to support stable PWM control in closed-loop systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BRDSS	75 V - Withstands 75 V drain-source blocking voltage before avalanche onset; suitable for 48 V nominal automotive bus systems.
R_DS(on) typ.	2.5 mΩ @ V_GS = 10 V, I_D = 140 A - Enables <1.5 W conduction loss at 195 A package-limited current, reducing heatsink requirements.
I_D (Package)	195 A @ T_C = 25°C - Maximum continuous current limited by leadframe thermal capacity, not silicon; defines PCB copper and mounting constraints.
E_AS	300 mJ - Single-pulse avalanche energy limit at T_J = 25°C; determines safe unclamped inductive turn-off margin in motor drives.
t_rr	54 ns @ T_J = 25°C - Body diode reverse recovery time; directly impacts switching loss and EMI in synchronous rectification topologies.
Q_g	160–240 nC - Total gate charge range defines driver strength requirement; 2.7 Ω gate resistor yields 99 ns t_d(off).
R_θJC	0.40 °C/W - Junction-to-case thermal resistance; enables direct heatsink mounting with predictable ΔT for thermal management.

Pinout & Package

D2-Pak (TO-263AB) package with exposed drain pad for low-inductance, high-current PCB mounting and thermal conduction. Three-terminal configuration: Gate (G), Drain (D), Source (S). Drain tab electrically connected to internal die backside and soldered to PCB ground plane.

Pin/Terminal	Circuit Role	Design Meaning
G	Control input	Receives 10 V logic-level gate drive; requires ≥2.7 Ω series resistance to damp ringing during fast switching.
D	Power output / High-side switch node	Connected to drain metallization and exposed copper pad; carries full load current and must be routed with minimum loop inductance.
S	Reference return / Low-side common	Source terminal tied to power ground; forms return path for body diode conduction and gate drive current.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	2.5 mΩ typ. reduces conduction loss by >30% vs. legacy 75 V MOSFETs at 140 A, enabling smaller heatsinks in space-constrained ECUs.
175°C operating temperature	Rated junction temperature allows full power operation in under-hood environments up to 150°C ambient without current derating.
Repetitive avalanche capability	Validated E_AR curves permit repeated unclamped inductive switching in motor phase-legs without cumulative degradation.
Enhanced dV/dt immunity	14 V/ns rated peak diode recovery dv/dt prevents spurious turn-on during high-speed commutation in noisy automotive harnesses.
Automotive qualification	AEC-Q101 qualified per Infineon's automotive standards; includes stress testing for temperature cycling, humidity, and mechanical shock.

Applications

Engine Control Unit (ECU) Fuel Injector Driver

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-speed switching of solenoid fuel injectors in gasoline direct injection systems with 12 V supply and 1–2 ms pulse widths.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET switch controlling injector coil current; operates in hard-switched mode with <100 ns fall time.

Use Value: 2.5 mΩ R_DS(on) limits on-state power dissipation to <0.5 W at 15 A, eliminating need for active cooling in compact ECU modules.

Use Scenario: Primary-side synchronous rectifier in bidirectional 48 V/12 V DC-DC converter for mild hybrid vehicles.

IC Role / Device Role / Timing Role: Low-side switch in phase-shifted full-bridge topology; conducts up to 195 A continuously with forced air cooling.

Use Value: 0.40 °C/W R_θJC enables 30 K rise at 195 A, allowing thermal design with standard aluminum heatsinks instead of liquid cooling.

Electric Power Steering (EPS) Motor Phase Leg

On-Board Charger (OBC) Input Stage

Use Scenario: Half-bridge leg in three-phase inverter driving 12 kW EPS motor with field-oriented control and 20 kHz PWM.

IC Role / Device Role / Timing Role: Low-side switch handling 140 A RMS phase current; subjected to repetitive avalanche during regenerative braking events.

Use Value: 300 mJ E_AS and validated E_AR curves ensure reliable operation during 100+ avalanche cycles per drive cycle without parameter shift.

Use Scenario: Active clamp switch in totem-pole PFC stage of 6.6 kW OBC, switching at 100 kHz with 75 V bus clamping.

IC Role / Device Role / Timing Role: Clamping MOSFET conducting short-duration high-di/dt pulses during zero-voltage switching transitions.

Use Value: 14 V/ns dV/dt rating prevents false triggering from bus transients, ensuring stable clamp timing and reduced gate driver complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 75 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N75F7	R_DS(on) = 2.2 mΩ typ., Q_g = 220 nC, R_θJC = 0.35 °C/W, TO-220FP package	Higher current density but lower thermal mass; requires tighter PCB layout for thermal relief due to smaller footprint	Select when board space is constrained and thermal interface can be optimized for TO-220FP mounting.
IXTH180N075L2	R_DS(on) = 2.8 mΩ typ., Q_g = 180 nC, R_θJC = 0.45 °C/W, TO-247 package	Larger package with higher creepage/clearance; better suited for industrial 48 V systems with less stringent AEC-Q101 compliance needs	Select when higher isolation voltage or non-automotive qualification is acceptable and manual assembly is preferred.

Compared with STL220N75F7 and IXTH180N075L2, AUIRFS3107 offers the best balance of automotive qualification, D2-Pak thermal performance, and gate drive compatibility for high-volume ECU and EPS designs requiring AEC-Q101 traceability and proven under-hood reliability.

Availability

AUIRFS3107 is available at Aetrix Electronics and suitable for engine control units, electric power steering inverters, 48 V mild hybrid DC-DC converters, and on-board chargers requiring stable component supply across automotive production lifecycles.

Supply support for AUIRFS3107 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

AUIRFS3107 belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, designed specifically for high-reliability, high-current switching in engine, transmission, and chassis control systems operating under extreme thermal and electrical stress.

FAQ

What is the maximum continuous drain current for AUIRFS3107 at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 160 A (silicon-limited), as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced channel mobility and increased R_DS(on) at elevated temperatures, and assumes proper PCB copper area and heatsinking per AN-994 guidelines.

Is AUIRFS3107 suitable for synchronous rectification in a 48 V to 12 V buck converter?

Yes - its 2.5 mΩ R_DS(on), 140 A current rating, and 54 ns t_rr make it well-suited for low-side synchronous rectification. The 175°C junction rating ensures reliability under sustained 195 A package-limited loads, and the D2-Pak's low R_θJC simplifies thermal integration into compact converter modules.

Does AUIRFS3107 require a negative gate voltage for reliable turn-off in high-noise automotive environments?

No - the device has a V_GS(th) range of 2.0–4.0 V and is fully controllable with 0 V to 10 V gate drive. However, applying –5 V during off-state improves noise immunity against coupled transients; the absolute maximum V_GS is ±20 V, so –5 V is within safe operating limits and commonly used in EPS and ECU designs.

How does the repetitive avalanche rating of AUIRFS3107 compare to single-pulse E_AS?

E_AS is 300 mJ (single-pulse, thermally limited), while repetitive avalanche energy (E_AR) depends on pulse width, duty cycle, and starting junction temperature - e.g., 100 mJ at 1% duty cycle and T_J = 150°C per Figure 15. Designers must use the provided Z_thJC curves and Equation PD(ave) = ΔT / Z_thJC to validate safe operation.

AUIRFS3107 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 140A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 240 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9370 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 370W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

AUIRFS3107 FAQ

1.How can I place an order for AUIRFS3107 through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFS3107 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFS3107 reliable?

The price and inventory of AUIRFS3107 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFS3107 is usually 5 days.

3.What payment methods are accepted for AUIRFS3107?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFS3107 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFS3107?

AUIRFS3107 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFS3107 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFS3107?

For technical support, including AUIRFS3107 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFS3107 requirements.

6.How does Aetrix verify that AUIRFS3107 is sourced from the original manufacturer or authorized distributors?

All AUIRFS3107 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFS3107 meets industry standards.

7.What is the process for return or replacement of AUIRFS3107?

All AUIRFS3107 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFS3107, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFS3107 part is unused and in its original packaging.

Return procedure for AUIRFS3107:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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