Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3205ZL

Name: IRF3205ZL
Brand: Infineon Technologies
SKU: IRF3205ZL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF3205ZL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF3205ZL.pdf

Description:: MOSFET N-CH 55V 75A TO262

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,861

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF3205ZL from Infineon Technologies (formerly International Rectifier) is an N-channel automotive-grade HEXFET® Power MOSFET in D²PAK (TO-263) package, rated for 55 V V_DSS, 6.5 mΩ R_DS(on) at V_GS = 10 V, and 75 A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_r = 95 ns, t_f = 67 ns), and rated repetitive avalanche capability - deployed in high-current DC motor drives and battery disconnect circuits.

For engineers reviewing the IRF3205ZL datasheet, IRF3205ZL pinout, IRF3205ZL application, or IRF3205ZL equivalent, key selection criteria include its low on-resistance per silicon area, thermal robustness under pulsed load conditions, body diode recovery performance (t_rr = 28–42 ns), and validated operation in automotive power distribution modules.

Technical Context

This MOSFET employs advanced planar silicon processing to minimize conduction losses while maintaining rugged unclamped inductive switching behavior. Its gate charge profile (Q_g = 76–110 nC, Q_gd = 30 nC) supports efficient gate driver sizing for 10–100 kHz PWM applications.

The integrated body diode exhibits V_SD = 1.3 V at I_S = 66 A and controlled reverse recovery (Q_rr = 25–38 nC), enabling reliable freewheeling in synchronous rectification and H-bridge motor control without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche onset; suitable for 48 V nominal automotive systems with transient margin.
R_DS(on)	6.5 mΩ max @ V_GS = 10 V, T_J = 25°C - Enables <1 W conduction loss at 40 A, critical for thermally constrained PCB layouts.
I_D (cont)	75 A @ T_C = 25°C - Sustains high peak currents in starter solenoid drivers and electric power steering pre-drivers.
T_J max	175°C - Allows operation in engine bay environments without derating below full current rating up to 100°C case temperature.
E_AS	110 mJ (tested) - Supports single-pulse inductive energy absorption during fault events in 12/24 V battery protection circuits.
Q_g	76–110 nC - Determines gate drive power requirement; compatible with standard 1 A peak gate drivers at ≤50 kHz switching.
t_r/t_f	95 ns / 67 ns - Limits switching transition losses in high-frequency DC-DC converters and BLDC motor inverters.

Pinout & Package

The IRF3205ZL is housed in a surface-mount D²PAK (TO-263) package with exposed drain pad for thermal enhancement and mechanical anchoring. The package footprint conforms to JEDEC MO-211AB, with 2.54 mm lead pitch and 10.67 mm × 9.65 mm body dimensions.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to large copper die attach pad; must be soldered to PCB ground plane or heatsink for R_θJC = 0.90°C/W thermal path.
Source	Reference node for gate drive and current sensing	Low-inductance connection point (L_S = 7.5 nH); used for Kelvin source sensing in precision current monitoring designs.
Gate	Control input for channel modulation	High-impedance MOS gate requiring <200 nA leakage current; sensitive to ESD and requires RC snubbing in high-dV/dt environments.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	6.5 mΩ enables <0.5 W conduction loss at 30 A, reducing heatsink size in space-constrained automotive ECUs.
175°C junction rating	Permits full-rated current delivery at ambient temperatures up to 125°C when mounted on 2 oz copper with thermal vias.
Repetitive avalanche capability	Rated for repeated unclamped inductive switching up to I_AR = 75 A, eliminating need for external clamping diodes in relay drivers.
Fast body diode recovery	t_rr = 28–42 ns and Q_rr = 25–38 nC reduce cross-conduction losses and EMI in half-bridge topologies.
Thermally enhanced D²PAK	Exposed drain tab provides direct thermal path to PCB; achieves R_θJA = 40°C/W on 1-in² 2 oz copper, 4-layer board.

Applications

Automotive Starter Circuit

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-current engagement of starter motor solenoid in stop-start systems with 12 V battery supply.

IC Role / Device Role / Timing Role: Main power switch controlling 50–70 A inrush current; operates in linear mode during pull-in phase then saturated switching.

Use Value: Low R_DS(on) minimizes voltage drop across switch during cranking, ensuring solenoid coil receives ≥9.6 V under cold-cranking conditions.

Use Scenario: Primary-side synchronous rectifier in bidirectional 48 V–12 V DC-DC converter for mild hybrid architectures.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology; commutated at 100–200 kHz with zero-voltage switching.

Use Value: Fast t_r/t_f and low Q_gd enable precise dead-time control, reducing circulating current and improving efficiency above 94% at 3 kW load.

Electric Power Steering (EPS) Pre-driver

Commercial Vehicle Battery Disconnect Switch

Use Scenario: High-side switch in EPS motor phase-leg pre-driver stage, interfacing MCU GPIO to gate driver IC.

IC Role / Device Role / Timing Role: Level-shifting interface between 3.3 V logic and 12 V gate drive rail; handles 10 A peak gate current pulses.

Use Value: 175°C rating ensures reliability during sustained torque assist events where ambient exceeds 105°C near steering column.

Use Scenario: Isolation switch between main traction battery and auxiliary loads in Class 8 trucks with dual-battery architecture.

IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical contactor; switched at <1 Hz with 200 A fault current interruption capability.

Use Value: Repetitive avalanche rating allows safe interruption of inductive loads (e.g., air compressor coils) without snubber networks or derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF75	75 V V_DSS, 10 mΩ R_DS(on), TO-220 package, lower Q_g (65 nC)	Higher voltage margin but higher conduction loss; unsuitable for compact D²PAK layouts	Select when system transients exceed 55 V or PCB space permits through-hole mounting.
IXTH75N10L2	100 V V_DSS, 9.5 mΩ R_DS(on), TO-247 package, 150°C T_J max	Lower thermal rating and larger footprint; lacks automotive qualification and avalanche testing data	Prefer only for industrial non-automotive use where 100 V blocking is mandatory and qualification is not required.

Compared with STP75NF75 and IXTH75N10L2, the IRF3205ZL offers optimal balance of low R_DS(on), automotive qualification, D²PAK thermal performance, and documented repetitive avalanche behavior - making it the preferred choice for space- and reliability-constrained vehicle electrification subsystems.

Availability

IRF3205ZL is available at Aetrix Electronics and suitable for automotive starter circuits, 48 V mild hybrid DC-DC converters, and commercial vehicle battery disconnect switches requiring stable component supply across extended production lifecycles.

Supply support for IRF3205ZL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

The HEXFET® Power MOSFET product line was developed specifically for high-reliability automotive and industrial power switching, emphasizing low conduction loss, thermal resilience, and ruggedness under repetitive stress conditions.

FAQ

What is the maximum allowable gate-source voltage for IRF3205ZL?

The absolute maximum V_GS rating is ±20 V. Operation beyond this range risks irreversible gate oxide breakdown. Recommended gate drive is +10 V to fully enhance the channel while maintaining margin against overshoot; negative turn-off bias is not required but may be used to improve noise immunity in high-dV/dt environments.

Does IRF3205ZL require a gate resistor, and what value is recommended?

Yes - a series gate resistor is required to dampen ringing and limit peak gate current. For typical 12 V gate drivers, a 10 Ω resistor balances switching speed (t_r/t_f) and EMI; values between 4.7 Ω and 22 Ω are used depending on layout parasitics and dv/dt requirements in automotive harness environments.

Can IRF3205ZL be paralleled with identical units for higher current handling?

Yes - its positive R_DS(on) temperature coefficient enables inherent current sharing. Successful paralleling requires matched gate drive paths, symmetrical PCB layout, and shared thermal mass. Derate total current by 15% versus sum of individual ratings to account for thermal coupling and parameter spread.

Is the body diode in IRF3205ZL suitable for continuous freewheeling in an H-bridge?

Yes - the integral body diode is rated for 75 A continuous source current and 440 A pulsed current, with t_rr = 28–42 ns and Q_rr = 25–38 nC. It supports synchronous rectification in motor control H-bridges up to 20 kHz, though external Schottky diodes may be added for ultra-low-loss 48 V systems operating above 50 kHz.

IRF3205ZL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 66A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3450 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRF3205ZL FAQ

1.How can I place an order for IRF3205ZL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3205ZL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3205ZL reliable?

The price and inventory of IRF3205ZL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3205ZL is usually 5 days.

3.What payment methods are accepted for IRF3205ZL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3205ZL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3205ZL?

IRF3205ZL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3205ZL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3205ZL?

For technical support, including IRF3205ZL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3205ZL requirements.

6.How does Aetrix verify that IRF3205ZL is sourced from the original manufacturer or authorized distributors?

All IRF3205ZL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3205ZL meets industry standards.

7.What is the process for return or replacement of IRF3205ZL?

All IRF3205ZL units undergo pre-shipment inspection (PSI). If there is an issue with IRF3205ZL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3205ZL part is unused and in its original packaging.

Return procedure for IRF3205ZL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…