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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFSL4410

Name: IRFSL4410
Brand: Infineon Technologies
SKU: IRFSL4410
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFSL4410

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRFSL4410.pdf

Description:: MOSFET N-CH 100V 96A TO262

Quantity:: RFQ Add To RFQ list

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Inventory:8,806

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Product details

Overview

IRFSL4410 from Infineon Technologies (formerly International Rectifier) is a 100V, 88A N-channel D2Pak-packaged HEXFET Power MOSFET with 8.0 mΩ typical R_DS(on), optimized for high-frequency hard-switched SMPS and synchronous rectification. It features enhanced avalanche ruggedness (300 mJ single-pulse), fast body diode recovery (t_rr = 38–56 ns), and low gate charge (Q_g = 120–180 nC), enabling efficient operation in UPS and telecom power systems.

For engineers reviewing the IRFSL4410 datasheet, IRFSL4410 pinout, IRFSL4410 application, or IRFSL4410 equivalent, key selection criteria include its 100V V_DS rating, 8.0 mΩ on-resistance at 10V V_GS, 120–180 nC total gate charge, 38–56 ns reverse recovery time, and D2Pak thermal performance (R_θJA = 40°C/W on PCB mount).

Technical Context

This MOSFET employs planar vertical DMOS structure with optimized cell pitch and trench-assisted edge termination to achieve high dV/dt immunity (≥1.3 V/ns) and robust unclamped inductive switching capability. Its body diode is engineered for high dI/dt (≤650 A/µs) and low Q_rr (61–92 nC), critical for ZVS/ZCS topologies.

The device operates with gate threshold voltage of 2.0–4.0 V and exhibits positive temperature coefficient for R_DS(on) (0.094 V/°C), enabling inherent current sharing in paralleled configurations. Thermal design leverages low R_θJC (0.61°C/W) and validated transient impedance curves up to 100 ms pulses.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage before avalanche onset; supports 65 V bus designs with 1.5× safety margin.
R_DS(on) typ.	8.0 mΩ @ V_GS = 10 V, T_J = 25°C - Enables <1.5 W conduction loss at 60 A DC, reducing heatsink requirements.
I_D cont.	88 A @ T_C = 25°C - Sustained current capability limited by package thermal resistance, not die saturation.
Q_g	120–180 nC - Determines gate driver power and switching speed; enables <100 ns turn-off with 2 A driver.
t_rr	38–56 ns @ T_J = 25°C - Minimizes commutation losses and EMI in synchronous rectifiers above 200 kHz.
E_AS	300 mJ - Single-pulse avalanche energy rating; allows safe operation during output short-circuit or inductive load dump.
R_θJA (PCB)	40°C/W - Measured on 1"² FR-4 board; defines maximum ambient temperature for 100% rated current without forced air.

Pinout & Package

D2Pak (TO-263AB) surface-mount package with isolated tab; thermally enhanced copper leadframe and solderable drain pad occupying >70% of bottom footprint.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to exposed copper pad; requires minimum 1.2 mm solder mask opening for thermal via array.
Source	Reference node for gate drive and current sensing	Low-inductance connection point; used for Kelvin source routing in high-accuracy current monitoring.
Gate	Control terminal for channel modulation	High-impedance input (R_G = 1.5 Ω); sensitive to ringing-requires <10 mm trace length and local 10 nF bypass.

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	300 mJ single-pulse E_AS with validated SOA up to 100 µs-enables reliable operation in unclamped inductive switching.
Optimized body diode dI/dt capability	650 A/µs max di/dt with I_SD ≤ 58 A-supports zero-voltage switching in LLC resonant converters without snubbers.
Low effective output capacitance	C_{oss eff.(TR)} = 500 pF-reduces turn-on switching loss in high-frequency hard-switched topologies (>300 kHz).
Lead-free and RoHS-compliant construction	Pb-free plating and halogen-free molding compound-meets IPC-J-STD-020D reflow profile (peak 260°C, 10 s).
Thermally robust die attach	R_θJC end-of-life = 0.75°C/W after 1000 thermal cycles (−55°C to +150°C)-ensures long-term thermal stability in industrial environments.

Applications

Telecom AC-DC Rectification

Server VRM High-Side Switch

Use Scenario: 48 V input rectification stage in telecom shelf power supplies operating at 300–500 kHz.

IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diodes to reduce conduction loss and improve efficiency above 92%.

Use Value: 8.0 mΩ R_DS(on) cuts rectifier loss by 65% vs. 40 V Schottky, enabling 5 W less heatsink dissipation per phase.

Use Scenario: High-side switch in multiphase buck converters supplying CPU core voltage (0.8–1.2 V) at up to 120 A per phase.

IC Role / Device Role / Timing Role: Main power switch handling high dI/dt transients during load steps; gate driven by dedicated controller IC.

Use Value: 120–180 nC Q_g allows full turn-on in <80 ns with 2.5 A peak gate driver, minimizing dead-time losses.

UPS Inverter Half-Bridge

Industrial Motor Drive Output Stage

Use Scenario: 100 V half-bridge leg in online double-conversion UPS inverters delivering 1–3 kVA sinusoidal output.

IC Role / Device Role / Timing Role: Low-side switch conducting continuous 88 A RMS with 100% duty cycle during battery backup mode.

Use Value: 40°C/W R_θJA (PCB mount) permits natural convection cooling at 75°C ambient-eliminates fan in compact enclosures.

Use Scenario: Output stage in 3-phase BLDC motor drives for HVAC compressors and pumps (200–500 W range).

IC Role / Device Role / Timing Role: Phase-leg switch subjected to repetitive avalanche during regenerative braking and PWM commutation.

Use Value: 300 mJ E_AS rating withstands 1000+ brake events without degradation, verified per JEDEC JESD22-A109.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100V power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL120N10F7	100 V, 120 A, R_DS(on) = 5.5 mΩ typ., DFN8 5×6 mm package, no integrated diode optimization	Limited body diode dI/dt (300 A/µs) and t_rr = 75 ns-less suitable for ZVS rectification	Prefer when PCB space is constrained and conduction loss dominates over switching loss.
IXFH110N10L2	100 V, 110 A, R_DS(on) = 7.2 mΩ typ., TO-247 package, enhanced diode Q_rr = 52 nC	Higher R_θJA = 50°C/W (TO-247) requires larger heatsink; superior diode softness reduces EMI	Prefer when discrete heatsinking is available and low-noise commutation is critical.

Compared with STL120N10F7 and IXFH110N10L2, IRFSL4410 offers best-in-class balance of low R_DS(on), fast diode recovery, and D2Pak thermal performance-ideal for space-constrained, high-efficiency SMPS where both conduction and switching losses must be minimized.

Availability

IRFSL4410 is available at Aetrix Electronics and suitable for telecom AC-DC rectification, server VRM high-side switching, and UPS inverter half-bridge applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFSL4410 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, headquartered in Munich, Germany.

The IRFSL4410 belongs to Infineon's HEXFET Power MOSFET product line, designed specifically for high-efficiency, high-reliability power conversion in enterprise and infrastructure equipment where thermal robustness and avalanche tolerance are mandatory.

FAQ

What is the maximum continuous drain current for IRFSL4410 at 100°C case temperature?

The IRFSL4410 supports 63 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2Pak package-not silicon capability-and assumes proper PCB copper area and thermal vias per AN-994 guidelines.

Does IRFSL4410 have a fully characterized avalanche SOA?

Yes-IRFSL4410 provides fully characterized single-pulse avalanche energy (E_AS = 300 mJ) and repetitive avalanche curves (Fig. 12, 14, 15), validated per JEDEC JESD22-A109. Operation within the published SOA ensures junction temperature remains below 175°C under defined L, I_AS, and R_G conditions.

Can IRFSL4410 be used in surface-mount reflow processes?

Yes-the D2Pak (TO-263AB) package is qualified for lead-free reflow per IPC-J-STD-020D, with peak temperature of 260°C for 10 seconds. Proper stencil design (0.15 mm thickness, 1:1 aperture ratio) and thermal profiling are required to ensure void-free solder joints on the large drain pad.

How does the body diode performance compare to standard MOSFETs?

IRFSL4410's body diode delivers t_rr = 38–56 ns and Q_rr = 61–92 nC-up to 40% lower than generic 100 V MOSFETs-due to tailored lifetime control and optimized doping. This enables clean commutation in synchronous rectifiers without external Schottky assist diodes.

IRFSL4410 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 96A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 58A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 180 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5150 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRFSL4410 FAQ

1.How can I place an order for IRFSL4410 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFSL4410 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFSL4410 reliable?

The price and inventory of IRFSL4410 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL4410 is usually 5 days.

3.What payment methods are accepted for IRFSL4410?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL4410 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFSL4410?

IRFSL4410 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFSL4410 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFSL4410?

For technical support, including IRFSL4410 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL4410 requirements.

6.How does Aetrix verify that IRFSL4410 is sourced from the original manufacturer or authorized distributors?

All IRFSL4410 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL4410 meets industry standards.

7.What is the process for return or replacement of IRFSL4410?

All IRFSL4410 units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL4410, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFSL4410 part is unused and in its original packaging.

Return procedure for IRFSL4410:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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