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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL8113

Name: IRL8113
Brand: Infineon Technologies
SKU: IRL8113
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL8113

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRL8113.pdf

Description:: MOSFET N-CH 30V 105A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:6,752

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Product details

Overview

IRL8113 from Infineon Technologies (formerly International Rectifier) is a 30V, 74A N-channel enhancement-mode HEXFET Power MOSFET in TO-262 package, optimized for high-frequency synchronous buck converters in CPU core power delivery. It features 4.8 mΩ R_DS(on) at V_GS = 10 V, 23 nC total gate charge, and fully characterized avalanche capability up to 1000 mJ.

For engineers reviewing the IRL8113 datasheet, IRL8113 pinout, IRL8113 application, or IRL8113 equivalent, key selection criteria include low R_DS(on) at 4.5 V V_GS, fast switching (t_r = 38 ns, t_f = 5.0 ns), body diode reverse recovery (Q_rr = 7.2–11 nC), and thermal resistance R_θJC = 1.32 °C/W for high-power density DC/DC designs.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-free die design to achieve low on-resistance while maintaining robust unclamped inductive switching (UIS) performance. Its gate threshold voltage (V_GS(th) = 1.35–2.25 V) enables reliable 4.5 V logic-level drive in modern multiphase VRMs.

The device integrates a co-packaged, low-Q_rr body diode (t_rr = 18–27 ns, V_SD ≤ 1.0 V at 17 A) and exhibits linear SOA behavior up to 100 µs pulse width at T_C = 25 °C. Thermal impedance Z_thJC is characterized across 1 µs–1 s pulses for transient thermal modeling in burst-mode operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and 12 V intermediate bus architectures
R_DS(on) max	6.0 mΩ @ V_GS = 10 V, T_J = 125 °C - Enables <1.5 W conduction loss at 74 A continuous current in VRM phase legs
Q_g typ	23 nC - Supports efficient 500 kHz–1 MHz switching with moderate gate driver current (≤2 A peak)
I_D @ T_C = 25 °C	74 A - Sustains full-phase current in single-MOSFET per phase CPU power stages
E_AS	1000 mJ - Withstands single-pulse avalanche energy during hard-switching transients in non-isolated topologies
R_θJC	1.32 °C/W - Allows direct heatsink mounting for thermal management in compact 1U server power supplies

Pinout & Package

IRL8113 is housed in a TO-262 (I²PAK) surface-mount-compatible package with isolated tab, rated for 10 lbf·in (1.1 N·m) mounting torque. The case serves as the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-current power output node	Electrically connected to metal tab; requires insulated mounting or heatsink isolation for floating-drain configurations
Source	Power return and reference node	Common connection point for sense resistor, gate driver return, and body diode cathode
Gate	Control input for channel modulation	High-impedance MOS gate requiring low-inductance PCB routing and RC snubbing to suppress dv/dt-induced turn-on

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V V_GS	Enables direct drive from standard PWM controller outputs without level-shifting, reducing BOM count in multi-phase VRMs
Fully characterized avalanche rating	Guarantees survivability under unclamped inductive switching events common in synchronous rectification failure modes
Optimized Q_gd/Q_gs1 ratio	Minimizes C_dv/dt turn-on risk in high-dv/dt switching nodes, critical for reliable operation in 48 V→1 V conversion stages
Lead-free (PbF) construction	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for reflow compatibility

Applications

Server CPU Core Power

GPU Voltage Regulator Module

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.5 V at up to 200 A to dual-socket Xeon processors.

IC Role / Device Role / Timing Role: Low-side synchronous FET in interleaved phase-leg topology, switching at 600 kHz with 100 ns dead time.

Use Value: 4.8 mΩ R_DS(on) reduces conduction loss by >35% vs. legacy 8 mΩ devices, enabling 92% efficiency at 150 A load.

Use Scenario: Compact 6-phase VRM on PCIe accelerator card delivering 0.75–1.2 V to NVIDIA A100 GPU.

IC Role / Device Role / Timing Role: High-current control FET with integrated body diode used in adaptive dead-time control schemes.

Use Value: 7.2 nC Q_rr minimizes cross-conduction loss during light-load discontinuous conduction mode (DCM).

Industrial PLC Power Supply

Telecom Baseband Processor Rail

Use Scenario: 24 V input, 3.3 V/20 A output buck converter powering real-time I/O controllers in harsh ambient environments.

IC Role / Device Role / Timing Role: Primary power switch operating continuously at T_J = 125 °C with 100% duty cycle capability.

Use Value: R_DS(on) drift of only +1.5× from 25 °C to 125 °C ensures stable regulation over full industrial temperature range.

Use Scenario: Point-of-load regulator feeding FPGA and DSP cores in 5G baseband units with strict EMI limits.

IC Role / Device Role / Timing Role: Fast-switching MOSFET in spread-spectrum synchronized buck stage operating at 1.2 MHz.

Use Value: 5.0 ns fall time and 290 pF Crss enable clean edge control and reduced radiated emissions below 30 MHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL8112PbF	R_DS(on) = 5.2 mΩ @ 10 V, Q_g = 20 nC, same TO-262 package	Slightly lower conduction loss but reduced avalanche energy (E_AS = 850 mJ)	Preferred where thermal margin exceeds 15 °C and avalanche stress is minimal
IPB050N03L3	R_DS(on) = 5.0 mΩ @ 10 V, Q_g = 27 nC, PG-HSOF-8 package	Lower R_DS(on) but higher gate charge increases driver losses above 800 kHz	Better for space-constrained layouts needing thermal pad soldering, less optimal for ultra-high-frequency VRMs

Compared with IRL8113, IRL8112 offers marginal conduction improvement at cost of reduced ruggedness, while IPB050N03L3 trades gate drive efficiency for package miniaturization-making IRL8113 the balanced choice for thermally demanding, high-reliability CPU power stages.

Availability

IRL8113 is available at Aetrix Electronics and suitable for server CPU core power, GPU voltage regulator modules, and industrial PLC power supplies requiring stable component supply and long-term lifecycle support.

Supply support for IRL8113 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRL8113 belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-current DC/DC conversion in computing and communications infrastructure where low R_DS(on), fast switching, and avalanche robustness are critical.

FAQ

Is IRL8113 suitable for 4.5 V gate drive in synchronous buck topologies?

Yes. IRL8113 is explicitly characterized for R_DS(on) down to 4.5 V V_GS, with typical on-resistance of 6.0 mΩ at that voltage. Its low gate threshold (1.35–2.25 V) ensures full enhancement even with controller output droop, making it ideal for 5 V logic-driven VRMs without external level shifters.

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies I_D = 42 A at T_C = 100 °C with V_GS = 10 V. This derating reflects thermal limits of the TO-262 package and must be validated against actual board layout, heatsink interface, and airflow conditions before final design sign-off.

Does IRL8113 have a specified reverse recovery charge (Q_rr) for its body diode?

Yes. Q_rr is specified as 7.2–11 nC at T_J = 25 °C, I_F = 17 A, and di/dt = 100 A/µs. This value is critical for estimating shoot-through loss in synchronous rectification and is measured using standardized unclamped inductive test conditions per JEDEC JESD24-11.

Can IRL8113 be used in parallel configurations for higher current handling?

Yes, but with strict layout constraints. Parallel operation requires matched gate drive paths, Kelvin source connections, and symmetrical thermal coupling. The positive R_DS(on) temperature coefficient (0.020 V/°C) supports current sharing, but gate charge mismatch may cause dynamic imbalance above 300 kHz switching frequency.

IRL8113 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 105A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2840 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRL8113 FAQ

1.How can I place an order for IRL8113 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL8113 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL8113 reliable?

The price and inventory of IRL8113 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL8113 is usually 5 days.

3.What payment methods are accepted for IRL8113?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL8113 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL8113?

IRL8113 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL8113 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL8113?

For technical support, including IRL8113 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL8113 requirements.

6.How does Aetrix verify that IRL8113 is sourced from the original manufacturer or authorized distributors?

All IRL8113 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL8113 meets industry standards.

7.What is the process for return or replacement of IRL8113?

All IRL8113 units undergo pre-shipment inspection (PSI). If there is an issue with IRL8113, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL8113 part is unused and in its original packaging.

Return procedure for IRL8113:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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