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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF6215

Name: AUIRF6215
Brand: Infineon Technologies
SKU: AUIRF6215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF6215

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: AUIRF6215.pdf

Description:: MOSFET P-CH 150V 13A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:5,419

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Product details

Overview

AUIRF6215 from Infineon Technologies is an automotive-grade N-channel enhancement-mode power MOSFET in TO-220AB package, rated for -150 V V(BR)DSS, 0.29 Ω RDS(on) max at VGS = -10 V and TJ = 25°C, -13 A continuous drain current at TC = 25°C, and qualified per AEC-Q101. It integrates a rugged body diode and is used in high-side switching circuits of automotive DC-DC converters and motor control inverters.

For engineers reviewing the AUIRF6215 datasheet, AUIRF6215 pinout, AUIRF6215 application, or AUIRF6215 equivalent, key selection criteria include its negative threshold voltage (-2.0 to -4.0 V), low gate charge (66 nC), fast switching (tr = 36 ns, tf = 37 ns), avalanche energy rating (13 mJ), and thermal resistance (RθJC = 1.4 °C/W).

Technical Context

This device operates as a high-voltage, high-current unidirectional switch with intrinsic body diode conduction capability. Its negative gate threshold and low RDS(on) support efficient high-side configuration in 12 V/24 V automotive systems where reverse polarity protection and load dump tolerance are required.

The MOSFET features thermally limited single-pulse avalanche energy (EAS = 13 mJ), robust dv/dt immunity (≥4.4 V/ns), and dynamic parameters optimized for hard-switched topologies: Qgd/Qg ratio ≈ 53%, Crss/Ciss ≈ 15%, and internal source/drain inductance (LS = 7.5 nH, LD = 4.5 nH) confirmed under standardized test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V(BR)DSS	-150 V - Withstands reverse-biased drain-source voltage up to 150 V without breakdown, enabling use in 24 V automotive systems with load-dump transients.
RDS(on) max	0.29 Ω @ VGS = -10 V, TJ = 25°C - Ensures <1.2 W conduction loss at -13 A, critical for thermal management in sealed engine bay environments.
ID @ TC = 25°C	-13 A - Supports continuous high-current loads such as fuel pump drivers and HVAC blower motors without derating at case temperature ≤25°C.
Qg	66 nC - Determines gate drive power requirement; compatible with standard automotive gate drivers (e.g., IR2110, UCC27531) without excessive heat generation.
EAS	13 mJ - Enables safe operation during inductive turn-off events in relay/snubberless solenoid driving without external clamping.
RθJC	1.4 °C/W - Allows direct heatsink mounting with minimal thermal interface resistance; junction-to-case path dominates thermal design in board-mounted applications.
tr / tf	36 ns / 37 ns @ ID = -6.6 A - Enables >100 kHz switching in DC-DC stages while limiting switching losses and EMI generation.

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard through-hole mounting, and screw-compatible flange (6-32 or M3). Thermal pad on backside requires mechanical fastening and thermal interface material for optimal heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives negative voltage relative to source to turn on; threshold range -2.0 to -4.0 V ensures noise margin in noisy automotive harnesses.
D (Drain)	High-side power output	Internally connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits.
S (Source)	Power return/reference node	Serves as local ground reference for gate drive; internal source inductance (7.5 nH) affects high-speed commutation stability.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive underhood operation (−40°C to +175°C TJ), including temperature cycling, HTRB, and UIS stress tests.
Low RDS(on) × Qg figure-of-merit	19.1 Ω·nC - Balances conduction and switching losses for high-efficiency 100–200 kHz DC-DC conversion in ADAS power supplies.
Body diode with soft recovery	trr = 160–240 ns, Qrr = 1.2–1.7 nC - Reduces voltage overshoot and ringing during freewheeling in half-bridge motor drives.
High dv/dt immunity	Rated ≥4.4 V/ns - Prevents false turn-on during fast transient coupling in high-noise engine control modules.

Applications

Automotive DC-DC Converter

Electric Power Steering (EPS) Motor Driver

Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 150 kHz with forced-air cooling.

Use Value: 0.29 Ω RDS(on) limits conduction loss to <1.2 W at full load, enabling compact heatsink design within tight under-hood space constraints.

Use Scenario: Half-bridge phase-leg switching in 3-phase EPS motor inverter.

IC Role / Device Role / Timing Role: Low-side switching element with body-diode freewheeling during PWM dead-time.

Use Value: Soft-recovery body diode (Qrr = 1.2–1.7 nC) suppresses voltage spikes across motor windings, reducing EMI filter size by 30%.

Engine Control Unit (ECU) Load Switch

Commercial Vehicle Air Suspension Solenoid Driver

Use Scenario: High-side switching of fuel injector coils and ignition coils in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Avalanche-rugged switch handling inductive kickback without external snubbers.

Use Value: 13 mJ single-pulse avalanche energy rating allows reliable operation across 100,000+ hot-plug cycles without degradation.

Use Scenario: Direct drive of 24 V pneumatic solenoids controlling air spring pressure in heavy-duty trucks.

IC Role / Device Role / Timing Role: Slow-switching (≤10 Hz), high-current (−13 A) load switch with reverse polarity protection.

Use Value: −150 V V(BR)DSS withstands ISO 7637-2 Pulse 5a (110 V/100 ms) load-dump transients without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage automotive power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP140NF55	V(BR)DSS = -55 V, RDS(on) = 0.008 Ω, Qg = 120 nC - lower voltage rating, higher gate charge	Not suitable for 48 V or load-dump tolerant designs; limited to 12 V low-side switching only	Select only if operating voltage stays below 40 V and gate drive strength supports 120 nC charge.
IXTP10N50D2	V(BR)DSS = -500 V, RDS(on) = 0.55 Ω, Qg = 24 nC - higher voltage, higher on-resistance, lower gate charge	Better for industrial AC-DC PFC stages but exceeds automotive thermal envelope at 13 A	Prefer for universal input offline SMPS; avoid in space-constrained automotive modules due to 0.55 Ω loss.

Compared with STP140NF55 and IXTP10N50D2, AUIRF6215 uniquely balances -150 V rating, 0.29 Ω on-resistance, and AEC-Q101 qualification-making it the only viable choice for 24/48 V automotive high-side switching where both transient robustness and thermal efficiency are mandatory.

Availability

AUIRF6215 is available at Aetrix Electronics and suitable for automotive power conversion, motor control, ECU load switching, and commercial vehicle solenoid driving requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for AUIRF6215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

AUIRF6215 belongs to Infineon's automotive-qualified HEXFET® power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine compartments and chassis control units.

FAQ

Is AUIRF6215 suitable for high-side switching with floating gate drive?

Yes. Its negative VGS(th) (-2.0 to -4.0 V) and -150 V V(BR)DSS enable robust high-side operation when paired with isolated gate drivers like the Si8233 or ADuM4120. The TO-220AB drain-tab isolation supports direct heatsink mounting without shorting the drain to system ground.

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies -13 A ID at TC = 25°C and derates linearly at 0.71 W/°C above that point. For continuous -13 A operation, TC must not exceed 100°C (calculated from PD = ID² × RDS(on) = 49 W, and RθJC = 1.4 °C/W → ΔT = 68.6°C → TC ≤ 25 + 68.6 ≈ 94°C).

Does AUIRF6215 require external avalanche protection in inductive load circuits?

No. Its 13 mJ single-pulse avalanche energy rating is validated per AEC-Q101 test condition UIS, allowing safe operation during worst-case inductive turn-off without snubbers-provided peak current and voltage remain within SOA limits defined in Fig. 11 of the datasheet.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode has VSD = -1.6 V and trr = 160–240 ns, which is slower and higher-drop than Schottky diodes but eliminates component count and layout complexity. It is optimized for controlled freewheeling-not high-frequency rectification-making it appropriate for motor drive half-bridges but not for synchronous rectifier applications above 50 kHz.

AUIRF6215 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 290mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 860 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

AUIRF6215 FAQ

1.How can I place an order for AUIRF6215 through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF6215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF6215 reliable?

The price and inventory of AUIRF6215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF6215 is usually 5 days.

3.What payment methods are accepted for AUIRF6215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF6215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF6215?

AUIRF6215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF6215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF6215?

For technical support, including AUIRF6215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF6215 requirements.

6.How does Aetrix verify that AUIRF6215 is sourced from the original manufacturer or authorized distributors?

All AUIRF6215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF6215 meets industry standards.

7.What is the process for return or replacement of AUIRF6215?

All AUIRF6215 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF6215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF6215 part is unused and in its original packaging.

Return procedure for AUIRF6215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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