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Infineon Technologies IPB180N04S4L01ATMA1

Part No.:
IPB180N04S4L01ATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-7, D2PAK (6 Leads + Tab)
Datasheet:
AetrixIPB180N04S4L01ATMA1.pdf
Description:
MOSFET N-CH 40V 180A TO263-7
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,945

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Product details

Overview

IPB180N04S4L01ATMA1 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET optimized for high-current automotive and industrial switching applications. It features a 40 V VDS, 1.2 mΩ RDS(on) at VGS = 10 V, 180 A continuous drain current at TC = 100 °C, and 100% avalanche-tested ruggedness. It is AEC-Q101 qualified and operates up to 175 °C junction temperature.

For engineers reviewing the IPB180N04S4L01ATMA1 datasheet, IPB180N04S4L01ATMA1 pinout, IPB180N04S4L01ATMA1 application, or IPB180N04S4L01ATMA1 equivalent, key selection criteria include its low RDS(on) at 4.5 V gate drive, integrated body diode with 70 ns trr, MSL1 reflow compatibility, and PG-TO263-7-3 package thermal performance.

Technical Context

This OptiMOSTM-T2 power transistor uses trench-gate superjunction technology to achieve low conduction losses while maintaining fast switching dynamics. Its gate threshold voltage (1.2–2.2 V) enables direct logic-level drive from 3.3 V/5 V microcontrollers, and its 14.7 nF Ciss and 240 pF Coss support efficient hard-switching in DC-DC converters and motor control inverters.

The device integrates a robust body diode rated for 180 A continuous forward current and 720 A pulsed current, with Qrr = 95 nC and trr = 70 ns at Tj = 25 °C. Its RthJC = 0.8 K/W ensures effective heat transfer to the PCB heatsink in surface-mount configurations.

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - Maximum blocking voltage for 12 V/24 V automotive and industrial bus systems
RDS(on) @ VGS=10 V1.2 mΩ max - Enables <1.8 W conduction loss at 180 A, reducing heatsink requirements
ID continuous @ TC=100 °C180 A - Sustains full-rated current without derating in compact thermal environments
EAS550 mJ - Confirmed single-pulse avalanche energy supports inductive load switching reliability
tr/tf21 ns / 80 ns - Fast switching transitions minimize switching losses in 20–100 kHz power stages
Qg245 nC max - Gate charge compatible with standard gate drivers delivering ≥2 A peak output
VGS(th)1.2–2.2 V - Ensures turn-on with 3.3 V logic signals and stable operation across temperature

Pinout & Package

IPB180N04S4L01ATMA1 is housed in a PG-TO263-7-3 package with exposed drain tab for enhanced thermal dissipation. The package features 7 terminals and is optimized for high-current surface-mount assembly on thermally robust PCBs.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1GateControl input requiring ≤245 nC total charge; low-threshold enables 3.3 V MCU drive
Pins 2, 3, 5, 6, 7SourceCommon source connection with low-inductance parallel routing; ties directly to power ground plane
Pin 4 + TabDrainMain power output node; metal tab provides primary thermal path to heatsink or copper pour

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive powertrain and chassis applications per stress test requirements
100% avalanche testedEach unit verified for 550 mJ single-pulse energy, ensuring field reliability under inductive fault conditions
MSL1 ratingCompatible with lead-free reflow profiles up to 260 °C peak, eliminating moisture sensitivity concerns
175 °C operating temperatureEnables deployment in engine bay, battery management, and high-ambient industrial enclosures
Green (RoHS-compliant)Meets EU Directive 2011/65/EU; no hazardous substances above threshold limits

Applications

Automotive DC-DC ConvertersIndustrial Motor Drives

Use Scenario: High-efficiency 12 V to 48 V bidirectional converter in 48 V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier switch handling 180 A continuous current.

Use Value: 1.2 mΩ RDS(on) reduces conduction loss by >35% vs. legacy 2.5 mΩ devices, improving system efficiency by 1.2% at full load.

Use Scenario: Three-phase inverter stage for 5–10 kW servo drives in CNC machinery.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid topology with fast freewheeling diode.

Use Value: 70 ns trr and 95 nC Qrr minimize commutation losses and diode reverse recovery spikes during PWM transitions.

Onboard Battery ChargersHigh-Current Load Switches

Use Scenario: AC/DC + DC/DC stage in 6.6 kW EV onboard charger with dual-phase interleaving.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant converter operating at 200–300 kHz.

Use Value: 14.7 nF Ciss and 240 pF Coss enable low capacitive switching loss and stable zero-voltage switching behavior.

Use Scenario: 12 V/24 V high-side power distribution switch for ADAS ECU power rails.

IC Role / Device Role / Timing Role: Logic-level controlled load switch with integrated overcurrent and thermal protection.

Use Value: 1.7 V typical VGS(th) ensures clean turn-on with automotive microcontroller GPIOs, eliminating external level-shifting circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N4LF8AGRDS(on) = 1.15 mΩ @ 10 V; Ciss = 15.2 nF; AEC-Q101 qualified; same PG-TO263-7-3 packageSlightly lower RDS(on) but higher gate charge (265 nC); marginally slower tr/tfPrefer when minimal conduction loss dominates over gate drive capability
IXTH180N04S5RDS(on) = 1.35 mΩ @ 10 V; TO-247 package; non-AEC qualified; RthJC = 0.45 K/WHigher thermal performance but through-hole mounting; not automotive-qualifiedPrefer for industrial UPS or solar inverters where board space and qualification are secondary

Compared with STL220N4LF8AG and IXTH180N04S5, IPB180N04S4L01ATMA1 offers the best balance of low gate charge, AEC-Q101 compliance, and MSL1 reflow readiness-critical for automated SMT production in automotive electronics.

Availability

IPB180N04S4L01ATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and onboard battery chargers requiring stable component supply and long-term lifecycle assurance.

Supply support for IPB180N04S4L01ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOSTM-T2 product line, engineered specifically for high-current, high-reliability switching in automotive electrification and industrial power conversion systems.

FAQ

Is IPB180N04S4L01ATMA1 suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage range of 1.2–2.2 V and guaranteed turn-on at VGS = 4.5 V, it fully supports direct drive from 3.3 V logic outputs. Its 42 nC Qgs and 245 nC total Qg allow fast switching using standard gate drivers with ≥2 A peak output capability.

What is the maximum PCB copper area required for thermal management?

At TC = 100 °C and 180 A continuous current, the device requires ≥400 cm² of 2 oz copper on the drain layer with thermal vias to inner ground planes. The 0.8 K/W RthJC assumes full tab soldering to a minimum 10 mm × 10 mm thermal pad with ≥12 thermal vias (0.3 mm diameter, 1 mm pitch).

Does the integrated body diode support synchronous rectification?

No-it is a parasitic body diode optimized for freewheeling, not synchronous rectification. Its 70 ns trr and 95 nC Qrr are suitable for hard-switched inductive loads, but for true synchronous rectification, an external Schottky or dedicated SR controller is required.

How does the 100% avalanche testing impact field reliability?

Each unit undergoes single-pulse avalanche stress at 550 mJ, verifying robustness against inductive kickback in motor drives and solenoid controls. This screening eliminates latent defects and correlates strongly with >10-year field MTBF in automotive applications per AEC-Q101 stress test data.

IPB180N04S4L01ATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-263-7, D2PAK (6 Leads + Tab)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
1.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 140µA
Gate Charge (Qg) (Max) @ Vgs:
245 nC @ 10 V
Vgs (Max):
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:
19100 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
188W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-7-3

IPB180N04S4L01ATMA1 FAQ

1.How can I place an order for IPB180N04S4L01ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB180N04S4L01ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB180N04S4L01ATMA1 reliable?

The price and inventory of IPB180N04S4L01ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB180N04S4L01ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB180N04S4L01ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB180N04S4L01ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB180N04S4L01ATMA1?

IPB180N04S4L01ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB180N04S4L01ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB180N04S4L01ATMA1?

For technical support, including IPB180N04S4L01ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB180N04S4L01ATMA1 requirements.

6.How does Aetrix verify that IPB180N04S4L01ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB180N04S4L01ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB180N04S4L01ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB180N04S4L01ATMA1?

All IPB180N04S4L01ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB180N04S4L01ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB180N04S4L01ATMA1 part is unused and in its original packaging.

Return procedure for IPB180N04S4L01ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPB180N04S4L01ATMA1 Tags

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