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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SI4420DYTR

Name: SI4420DYTR
Brand: Infineon Technologies
SKU: SI4420DYTR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4420DYTR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4420DYTR.pdf

Description:: MOSFET N-CH 30V 12.5A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:4,189

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Product details

Overview

SI4420DYTR from Vishay Siliconix is an N-channel logic-level power MOSFET in SO-8 package, rated for 30 V V_DS, 12.5 A continuous drain current at 25°C, and 9 mΩ R_DS(on) at V_GS = 10 V. It features low gate charge (52 nC), fast switching (t_r = 10 ns), and robust avalanche energy rating (400 mJ), enabling use in synchronous buck converters and battery-powered motor drives.

For engineers reviewing the SI4420DYTR datasheet, SI4420DYTR pinout, SI4420DYTR application, or SI4420DYTR equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.0–2.5 V), thermal resistance (R_θJA = 50 °C/W), SO-8 copper leadframe construction, and body diode recovery time (t_rr = 52–78 ns) for high-efficiency DC-DC stages.

Technical Context

This MOSFET employs trench-gate HEXFET technology to achieve low conduction loss and fast switching with minimal Miller effect-evidenced by C_rss = 150 pF and Q_gd = 12 nC. Its gate threshold voltage (1.0–2.5 V) ensures reliable turn-on from 3.3 V or 5 V microcontroller outputs without level-shifting.

The device integrates a co-packaged body diode with V_SD = 1.1 V at 2.3 A and t_rr = 52–78 ns, supporting synchronous rectification and freewheeling in half-bridge topologies. Thermal design is enabled by SO-8 copper leadframe and R_θJA = 50 °C/W on FR4 board.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports 24 V nominal bus systems with margin for transients
R_DS(on)	9 mΩ @ V_GS = 10 V - enables <150 mW conduction loss at 12.5 A
Q_g	52 nC - allows efficient 500 kHz switching with moderate gate driver strength
t_r/t_f	10 ns / 47 ns - minimizes switching transition losses in high-frequency converters
E_AS	400 mJ - withstands single-pulse inductive energy in motor control or relay snubbing
V_GS(th)	1.0–2.5 V - fully enhances from standard 3.3 V logic, eliminating external level shifters
R_θJA	50 °C/W - limits junction rise to ~125°C at 2.5 W dissipation on standard FR4

Pinout & Package

SO-8 surface-mount package with exposed drain paddle for enhanced thermal performance; JEDEC MS-012AA compliant; copper leadframe improves power handling over standard SO-8.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Seven parallel drain terminals connected to internal die and exposed paddle - primary current path and thermal conduction path to PCB
6	Gate (G)	Control input requiring ≤52 nC charge for full enhancement; sensitive to ESD (±20 V rating)
Source (S)	Source (S)	Pins 1–5 and 7–8 are internally tied to source; provides low-inductance return path for load current and gate drive loop

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) max 2.5 V - compatible with 3.3 V MCU GPIO without external driver
Low R_DS(on)	9 mΩ @ 10 V - reduces I²R loss in high-current 12–24 V power rails
Fast switching	t_r = 10 ns, Q_gd = 12 nC - enables >1 MHz operation with low overlap loss
Robust body diode	t_rr = 52–78 ns, V_SD = 1.1 V - supports synchronous rectification with low reverse recovery loss
Thermal-enhanced SO-8	Copper leadframe + exposed drain - delivers >800 mW power dissipation on FR4 vs. ~500 mW for standard SO-8

Applications

Battery-Powered Motor Drive

Synchronous Buck Converter

Use Scenario: Driving brushed DC motors in portable power tools with 12–24 V Li-ion packs and PWM-controlled H-bridge.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration; handles peak currents up to 50 A pulsed with 400 mJ avalanche capability.

Use Value: Logic-level gate eliminates level shifter; 9 mΩ R_DS(on) extends runtime by reducing conduction loss by >30% vs. 20 mΩ alternatives.

Use Scenario: High-efficiency 5 V output stage in 12 V input telecom DC-DC module operating at 500 kHz.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; body diode conducts during dead-time, then channel conducts during active phase.

Use Value: 1.1 V V_SD and 52 ns t_rr cut reverse recovery loss by ~65% versus 40 V Schottky; 9 mΩ R_DS(on) lowers conduction loss below diode forward drop.

USB-C Power Delivery Switch

Industrial PLC Output Module

Use Scenario: Load switch controlling 20 V/3 A USB-C PD power path with inrush limiting and fault protection.

IC Role / Device Role / Timing Role: High-side or low-side power switch; controlled via 3.3 V microcontroller with integrated gate resistor network.

Use Value: V_GS(th) ≤2.5 V ensures full enhancement at 3.3 V; 12.5 A continuous rating supports 150% overload for 10 s per IEC 61000-4-5 surge testing.

Use Scenario: Solid-state relay replacement in 24 V DC digital output module driving solenoids and indicator lamps.

IC Role / Device Role / Timing Role: Final-stage power switch with integrated flyback diode clamping; driven directly from FPGA I/O bank.

Use Value: 30 V V_DS and -55 to +150 °C T_J range meet industrial ambient requirements; SO-8 footprint simplifies layout vs. TO-252.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	R_DS(on) = 28 mΩ @ 4.5 V; SO-8; lower current (4.3 A)	Lower power density - suitable only for <2 A loads	Select when gate drive is limited to 3.3 V and power dissipation must stay under 0.5 W
DMN3022LSD-13	R_DS(on) = 11 mΩ @ 4.5 V; dual N-channel in SO-8; 6.5 A per channel	Integrated dual topology - ideal for half-bridge or load-switch pairs	Choose for space-constrained designs needing two matched switches in one package

Compared with IRLML6344TRPBF and DMN3022LSD-13, SI4420DYTR delivers higher current capacity (12.5 A), lower on-resistance (9 mΩ), and superior thermal performance due to its optimized copper leadframe - making it preferred for single-switch, high-power-density applications above 5 A.

Availability

SI4420DYTR is available at Aetrix Electronics and suitable for battery-powered motor drives, synchronous buck converters, USB-C power delivery switches, and industrial PLC output modules requiring stable component supply and long-term manufacturability.

Supply support for SI4420DYTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power solutions.

The SI44xx series targets high-current, logic-level switching in compact packages - designed specifically for space- and thermally constrained battery-operated and industrial power systems where gate drive simplicity and conduction efficiency are critical.

FAQ

What is the maximum continuous drain current for SI4420DYTR at 70°C case temperature?

The maximum continuous drain current is ±10 A at T_A = 70°C with V_GS = 10 V. This derating reflects thermal limits of the SO-8 package on standard FR4 PCB; actual current depends on heatsinking and airflow. The device's R_θJA = 50 °C/W means 10 A at 70°C ambient yields ~125°C junction temperature, within its -55 to +150 °C rating.

Does SI4420DYTR have a built-in body diode, and what are its key parameters?

Yes, SI4420DYTR integrates a monolithic body diode with V_SD = 1.1 V at 2.3 A and reverse recovery time t_rr = 52–78 ns at T_J = 25°C. The diode is rated for continuous source current of 2.3 A and pulsed source current of 50 A, enabling use in freewheeling and synchronous rectification without external diodes.

Can SI4420DYTR be driven directly from a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage is specified from 1.0 V to 2.5 V, and R_DS(on) is guaranteed at V_GS = 4.5 V (13 mΩ). At 3.3 V, typical R_DS(on) is ~18 mΩ, sufficient for ≤6 A loads. For full 12.5 A capability, 5 V or 10 V gate drive is recommended.

What is the avalanche energy rating, and how is it tested?

SI4420DYTR is rated for 400 mJ single-pulse avalanche energy (E_AS) with test conditions: L = 13 mH, I_AS = 8.9 A, R_G = 25 Ω, starting T_J = 25°C. This rating validates ruggedness against inductive switching transients in motor and relay drivers, ensuring reliability without external snubbers under defined stress conditions.

SI4420DYTR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2240 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

SI4420DYTR FAQ

1.How can I place an order for SI4420DYTR through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4420DYTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4420DYTR reliable?

The price and inventory of SI4420DYTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4420DYTR is usually 5 days.

3.What payment methods are accepted for SI4420DYTR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4420DYTR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4420DYTR?

SI4420DYTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4420DYTR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4420DYTR?

For technical support, including SI4420DYTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4420DYTR requirements.

6.How does Aetrix verify that SI4420DYTR is sourced from the original manufacturer or authorized distributors?

All SI4420DYTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4420DYTR meets industry standards.

7.What is the process for return or replacement of SI4420DYTR?

All SI4420DYTR units undergo pre-shipment inspection (PSI). If there is an issue with SI4420DYTR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4420DYTR part is unused and in its original packaging.

Return procedure for SI4420DYTR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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