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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7492

Name: IRF7492
Brand: Infineon Technologies
SKU: IRF7492
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7492

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7492.pdf

Description:: MOSFET N-CH 200V 3.7A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:6,059

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Product details

Overview

IRF7492 from Infineon Technologies (formerly International Rectifier) is a 200 V, 3.7 A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for high-frequency DC-DC converters. It features 79 mΩ R_DS(on) at V_GS = 10 V, 39 nC total gate charge, and fully characterized C_oss,eff = 150 pF to simplify snubberless flyback and resonant converter design.

For engineers reviewing the IRF7492 datasheet, IRF7492 pinout, IRF7492 application, or IRF7492 equivalent, key selection criteria include its low Q_gd/Q_g ratio (15/39 nC), avalanche-rated 130 mJ single-pulse energy, SO-8 thermal performance (R_θJA = 50 °C/W), and body diode t_rr = 69 ns for synchronous rectification support.

Technical Context

The IRF7492 employs planar vertical DMOS structure with optimized charge distribution to minimize switching losses in hard-switched topologies. Its low gate-to-drain charge (Q_gd = 15 nC) and tightly controlled C_oss profile (190 pF at V_DS = 25 V, 89 pF at 160 V) enable predictable zero-voltage switching transitions in LLC and phase-shifted full-bridge converters.

It integrates a robust intrinsic body diode with V_SD = 1.3 V at I_S = 2.2 A and t_rr = 69 ns, supporting bidirectional current flow in half-bridge configurations. Avalanche capability (I_AR = 4.4 A, E_AS = 130 mJ) allows unclamped inductive switching without external protection in compact power supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports 48 V input DC-DC systems with 2× safety margin against transients
R_DS(on) max	79 mΩ @ V_GS = 10 V - enables ≤1.2 W conduction loss at 3.7 A continuous drain current
Q_g	39 nC - determines gate driver current requirement (e.g., 3.9 mA avg. for 100 kHz switching)
C_oss,eff	150 pF - defines turn-off energy loss and resonant tank behavior in ZVS designs
t_rr	69 ns - limits reverse recovery loss during high-side switch commutation
E_AS	130 mJ - permits safe operation under 4.4 A inductive fault conditions without derating
R_θJA	50 °C/W - sets maximum ambient temperature limit to ~75 °C at 2.5 W dissipation on standard PCB

Pinout & Package

IRF7492 uses JEDEC MS-012AA-compliant SO-8 surface-mount package (4.0 × 5.0 mm footprint, 1.75 mm height). Thermal pad is not exposed; junction-to-drain lead resistance is 20 °C/W for heatsink-down mounting.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5	Drain (D)	Five paralleled internal drain connections - provides low-inductance, high-current path to PCB copper pour
6	Gate (G)	Single gate input - requires <10 Ω series resistance to damp ringing due to 1820 pF C_iss
7, 8	Source (S)	Dual source terminals - reduces source inductance for stable gate drive referencing and accurate current sensing

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	38% - reduces Miller-induced shoot-through risk and improves gate drive efficiency
Fully characterized C_oss,eff	150 pF over 0–160 V - eliminates iterative snubber tuning in flyback and forward converters
Avalanche-rated operation	130 mJ single-pulse - removes need for external clamping in 48 V telecom power modules
Body diode t_rr	69 ns - enables use as synchronous rectifier in secondary-side regulation without external Schottky
SO-8 thermal resistance	R_θJA = 50 °C/W - supports >1.5 W continuous output in space-constrained industrial SMPS

Applications

Telecom DC-DC Brick

Industrial PLC Power Supply

Use Scenario: 48 V input to 12 V/5 V isolated DC-DC conversion in telecom shelf power units.

IC Role / Device Role / Timing Role: Primary-side switching MOSFET in active-clamp forward topology operating at 250–500 kHz.

Use Value: Low C_oss,eff and fast t_rr reduce switching loss by 22% vs. legacy SO-8 MOSFETs, enabling 92% peak efficiency at full load.

Use Scenario: Auxiliary 24 V supply generation in programmable logic controller backplanes.

IC Role / Device Role / Timing Role: High-side switch in non-isolated buck regulator powering FPGA I/O banks and analog sensors.

Use Value: 200 V rating accommodates 150 V surge transients per IEC 61000-4-5, eliminating external TVS diodes.

LED Driver Secondary Side

Automotive Body Control Module

Use Scenario: Synchronous rectification in constant-current LED driver for street lighting.

IC Role / Device Role / Timing Role: Secondary-side MOSFET replacing Schottky diode in flyback converter with 100 kHz switching.

Use Value: Body diode V_SD = 1.3 V and t_rr = 69 ns cut conduction loss by 40% and eliminate reverse recovery noise.

Use Scenario: Load switch for 12 V battery-fed actuators (window lifters, mirror controls).

IC Role / Device Role / Timing Role: Protected high-side power switch with integrated avalanche energy handling.

Use Value: 130 mJ E_AS withstands inductive kickback from 100 mH solenoid loads without external freewheeling diode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NF20	200 V, 12 A, TO-220 package, R_DS(on) = 180 mΩ - higher conduction loss, larger footprint	Requires heatsink; unsuitable for high-density SO-8 layouts	Choose only when >10 A continuous current is required and board space allows through-hole mounting
SiHP12N20C	200 V, 12 A, SO-8, R_DS(on) = 120 mΩ, Q_g = 24 nC - lower gate charge but higher on-resistance	Better switching efficiency at light loads; worse thermal performance at full load	Prefer for <1 A average current applications where gate drive power dominates losses

Compared with STP12NF20 and SiHP12N20C, the IRF7492 delivers optimal balance of low R_DS(on), moderate Q_g, and SO-8 thermal capability-making it uniquely suited for compact 3–5 A DC-DC converters where board area and efficiency are co-constrained.

Availability

IRF7492 is available at Aetrix Electronics and suitable for telecom DC-DC bricks, industrial PLC power supplies, and automotive body control modules requiring stable component supply across multi-year production cycles.

Supply support for IRF7492 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF7492 belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switch-mode power supplies in industrial and telecom infrastructure.

FAQ

What is the maximum continuous drain current at 100°C ambient temperature?

The IRF7492 supports 2.2 A continuous drain current at T_A = 100°C, derived from its 3.0 A rating at 70°C and linear derating factor of 0.02 W/°C applied to its 2.5 W P_D limit. This assumes standard 1-inch² copper pad on FR-4 PCB without forced airflow.

Does the IRF7492 require a gate resistor for reliable operation?

Yes-a 5–10 Ω gate resistor is recommended to suppress oscillation caused by its 1820 pF input capacitance interacting with PCB trace inductance. Without damping, ringing can exceed ±20 V gate voltage limits and cause false turn-on during high dv/dt events.

Can the IRF7492 be used in synchronous rectification mode?

Yes-the device's body diode has t_rr = 69 ns and V_SD = 1.3 V at 2.2 A, enabling direct replacement of Schottky diodes in secondary-side synchronous rectifiers. Gate must be driven with precise timing relative to primary switch to avoid cross-conduction.

Is the SO-8 package thermally enhanced with an exposed pad?

No-the IRF7492 SO-8 package has no exposed thermal pad. Its R_θJA = 50 °C/W is measured on standard JEDEC test board (1 inch² copper). For improved thermal performance, use multiple vias under drain pads to inner-layer ground planes or consider SO-8 variants with thermal pad (e.g., IRF7494).

IRF7492 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 79mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 59 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1820 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7492 FAQ

1.How can I place an order for IRF7492 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7492 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7492 reliable?

The price and inventory of IRF7492 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7492 is usually 5 days.

3.What payment methods are accepted for IRF7492?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7492 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7492?

IRF7492 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7492 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7492?

For technical support, including IRF7492 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7492 requirements.

6.How does Aetrix verify that IRF7492 is sourced from the original manufacturer or authorized distributors?

All IRF7492 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7492 meets industry standards.

7.What is the process for return or replacement of IRF7492?

All IRF7492 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7492, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7492 part is unused and in its original packaging.

Return procedure for IRF7492:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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