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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH4210TRPBF

Name: IRFH4210TRPBF
Brand: Infineon Technologies
SKU: IRFH4210TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH4210TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IRFH4210TRPBF.pdf

Description:: MOSFET N-CH 25V 45A PQFN

Quantity:: RFQ Add To RFQ list

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Inventory:9,881

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Product details

Overview

IRFH4210TRPBF from Infineon Technologies (formerly International Rectifier) is a 25 V, 245 A N-channel enhancement-mode HEXFET® Power MOSFET in a PQFN 5 mm × 6 mm package with bottom-side thermal pad. It delivers 1.10 mΩ R_DS(on) at V_GS = 10 V and 1.35 mΩ at 4.5 V, features 36 nC typical gate charge, and supports synchronous rectification in high-current DC-DC converters.

For engineers reviewing the IRFH4210TRPBF datasheet, IRFH4210TRPBF pinout, IRFH4210TRPBF application, or IRFH4210TRPBF equivalent, key selection criteria include low R_DS(on), sub-1.2 °C/W junction-to-case thermal resistance, MSL1 rating, and industry-standard pinout for multi-vendor compatibility in high-density power stages.

Technical Context

This MOSFET operates as a high-current, low-voltage switching element optimized for synchronous rectification in buck and isolated DC-DC topologies. Its 25 V V_DSS, 245 A continuous drain current at T_C = 25°C, and 1.10 mΩ on-resistance enable efficient conduction in 12 V input systems with tight voltage margins.

The device integrates a fast body diode with 26–39 ns reverse recovery time and 51–77 nC Q_rr, supporting high-frequency operation up to 1 MHz. Its PQFN 5×6 mm package provides dual thermal paths-1.2 °C/W to PCB (bottom) and 21 °C/W to ambient-enabling compact, thermally robust layouts without external heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	25 V - Supports 12 V nominal bus systems with margin against transients and ringing.
R_DS(on) max @ 10 V	1.10 mΩ - Enables ≤0.28 W conduction loss at 50 A, critical for >95% efficiency in high-current phases.
R_DS(on) max @ 4.5 V	1.35 mΩ - Ensures robust turn-on under logic-level gate drive (e.g., from controller ICs with 3.3/5 V outputs).
Q_g typical	36 nC - Balances switching speed and gate driver loading for 500 kHz–1 MHz operation with <24 ns t_d(off).
I_D @ T_C = 25°C	245 A - Sustains full-load current in multiphase VRMs and server POL converters without derating.
R_θJC (Bottom)	1.2 °C/W - Allows direct thermal coupling to PCB copper, eliminating need for thermal vias or heatsinks in most applications.
Package	PQFN 5 mm × 6 mm - Industry-standard footprint compatible with automated SMT assembly and reflow profiles (MSL1).

Pinout & Package

PQFN 5 mm × 6 mm package with exposed thermal pad on bottom side and 8-pin layout (3×2 array + 2 center source pins). Pin 1 marked by dot; leads are lead-free, RoHS-compliant, and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8	Source (S)	All eight terminals connect internally to source; enables ultra-low-inductance, high-current return path to PCB ground plane.
Drain (D)	Exposed bottom pad	Primary current-carrying and thermal interface; soldered directly to large copper pour for conduction and cooling.
Gate (G)	Pin 1 (marked)	Single dedicated gate terminal; positioned for minimal loop inductance when routed adjacent to driver output.

Key Features

Feature	Design Value
Low R_DS(on)	1.10 mΩ @ 10 V reduces I²R losses by >30% vs. comparable 3.5 mΩ devices in 50 A POL stages.
Low R_θJC (Bottom)	1.2 °C/W allows 100% of heat to be extracted through PCB, enabling 2-layer board designs without thermal vias.
Low profile	0.9 mm height fits within 1.0 mm envelope constraints for ultra-thin server and telecom modules.
Industry-standard pinout	Compatible with IRFH4220, SiR626DP, and CSD18540Q5B footprints-reducing redesign effort across vendors.
MSL1 qualification	Enables single-pass reflow without baking, reducing manufacturing cost and moisture-related reliability risk.

Applications

Synchronous Buck Converter

Isolated DC-DC Secondary Side

Use Scenario: High-efficiency 12 V input → 0.8–3.3 V output conversion in CPU/GPU VRMs.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to minimize forward voltage drop and recovery loss.

Use Value: Achieves >96% peak efficiency at 50 A due to 1.10 mΩ R_DS(on) and fast body diode (t_rr = 26 ns).

Use Scenario: Secondary-side rectification in 48 V–12 V isolated telecom PSUs.

IC Role / Device Role / Timing Role: Low-V_F replacement for diode in forward or LLC converter secondary.

Use Value: Reduces conduction loss by 65% vs. 40 V Schottky, enabling smaller magnetics and higher power density.

Active ORing Circuit

Battery-Powered Motor Inverter

Use Scenario: Redundant 12 V power supply inputs in industrial PLCs and network switches.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET acting as ideal diode with bidirectional blocking.

Use Value: Eliminates 0.4 V diode drop, cutting heat generation by 80% and enabling fanless enclosure design.

Use Scenario: H-bridge motor control in cordless power tools and e-bikes with 18–24 V battery packs.

IC Role / Device Role / Timing Role: High-current half-bridge switch handling 150 A peak motor surge currents.

Use Value: Withstands 400 A pulsed drain current (I_DM) and dissipates <1.5 W at 100 A due to 1.2 °C/W R_θJC.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-GE3	R_DS(on) = 1.25 mΩ @ 10 V; Q_g = 42 nC; same PQFN 5×6 package.	Slightly higher gate charge increases driver loss at >1 MHz; identical thermal performance.	Preferred where gate driver has >1 A peak capability and layout prioritizes thermal uniformity over minimal Q_g.
CSD18540Q5B	R_DS(on) = 1.05 mΩ @ 10 V; Q_g = 33 nC; same footprint but non-Moisture-Sensitive Level 1 rating.	Requires baking before reflow; lower R_DS(on) yields ~5% lower conduction loss at 60 A.	Select when highest efficiency is critical and manufacturing process accommodates MSL2 handling.

Compared with SiR626DP-T1-GE3 and CSD18540Q5B, IRFH4210TRPBF offers optimal balance of ultra-low R_DS(on), MSL1 reliability, and proven field performance in high-volume server VRMs-making it preferred for production programs requiring zero rework risk and consistent thermal behavior.

Availability

IRFH4210TRPBF is available at Aetrix Electronics and suitable for synchronous buck converters, isolated DC-DC secondary rectification, and active ORing circuits requiring stable component supply, long-term lifecycle support, and validated thermal performance in high-current power stages.

Supply support for IRFH4210TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and wide-bandgap device design.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, telecom, and industrial power supplies where thermal density and reliability are paramount.

FAQ

What is the maximum continuous drain current for IRFH4210TRPBF at 100°C case temperature?

The maximum continuous drain current is 155 A at T_C = 100°C and V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced channel conductivity and increased R_DS(on) at elevated temperatures, and assumes proper PCB copper area for heat dissipation.

Does IRFH4210TRPBF have an integrated body diode, and what are its key parameters?

Yes, it includes a monolithic p-n junction body diode rated for 245 A continuous source current and 400 A pulsed current. Key parameters include V_SD = 1.0 V at I_S = 50 A and T_J = 25°C, t_rr = 26–39 ns, and Q_rr = 51–77 nC-enabling efficient synchronous rectification without external diodes.

Can IRFH4210TRPBF be used with 3.3 V gate drive?

No-it requires minimum 4.5 V gate drive for reliable enhancement-mode operation. At V_GS = 4.5 V, R_DS(on) rises to 1.35 mΩ (vs. 1.10 mΩ at 10 V), and V_GS(th) ranges from 1.1 to 2.1 V. Using 3.3 V risks incomplete turn-on, excessive conduction loss, and thermal runaway under load.

What is the recommended PCB layout for optimal thermal performance?

A minimum 400 mm² exposed copper area connected to the bottom drain pad via ≥12 thermal vias (0.3 mm diameter, 0.6 mm pitch) is recommended. The source pins should connect to a solid ground plane, and gate traces must be short and shielded from noise to prevent false triggering-per AN-1136 guidelines.

IRFH4210TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.35mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 74 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4812 pF @ 13 V

FET Feature:: -

Power Dissipation (Max):: 3.6W (Ta), 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (5x6)

IRFH4210TRPBF FAQ

1.How can I place an order for IRFH4210TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH4210TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH4210TRPBF reliable?

The price and inventory of IRFH4210TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH4210TRPBF is usually 5 days.

3.What payment methods are accepted for IRFH4210TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH4210TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH4210TRPBF?

IRFH4210TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH4210TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH4210TRPBF?

For technical support, including IRFH4210TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH4210TRPBF requirements.

6.How does Aetrix verify that IRFH4210TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFH4210TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH4210TRPBF meets industry standards.

7.What is the process for return or replacement of IRFH4210TRPBF?

All IRFH4210TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH4210TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH4210TRPBF part is unused and in its original packaging.

Return procedure for IRFH4210TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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