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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISZ0804NLSATMA1

Name: ISZ0804NLSATMA1
Brand: Infineon Technologies
SKU: ISZ0804NLSATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISZ0804NLSATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: ISZ0804NLSATMA1.pdf

Description:: MOSFET N-CH 100V 11A/58A TSDSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

ISZ0804NLSATMA1 from Infineon Technologies is an N-channel logic-level MOSFET in PG-TSDSON-8 FL package, rated for 100 V V_DS, 11.5 mΩ R_DS(on) at V_GS = 10 V, and 58 A continuous drain current at T_C = 25 °C. It features 100% avalanche testing, low Q_oss (24 nC), and optimized gate charge (Q_g = 9.2 nC @ 4.5 V) for high-frequency switching in USB PD and laptop charger power stages.

For engineers reviewing the ISZ0804NLSATMA1 datasheet, ISZ0804NLSATMA1 pinout, ISZ0804NLSATMA1 application, or ISZ0804NLSATMA1 equivalent, key selection criteria include its 1.2 °C/W junction-to-case thermal resistance, 4.5 V logic-level gate drive compatibility, integrated body diode with 30 ns t_rr, and qualification per JEDEC standards for industrial and computing power delivery systems.

Technical Context

This OptiMOSTM5 device uses trench-gate superjunction technology to achieve low R_DS(on) × Q_g figure-of-merit (106 mΩ·nC) and fast switching (t_d(on) = 6.7 ns, t_f = 3.2 ns). Its gate plateau voltage is 3.1 V, enabling stable turn-on under 4.5 V logic drive without external level shifting.

The MOSFET integrates a robust body diode with 0.87 V forward voltage at 20 A and 26 nC reverse recovery charge, supporting synchronous rectification and hard-switched topologies. Thermal design is enabled by bottom-side thermal pad (Drain pins 5–8) and validated R_thJC of 1.2 °C/W to PCB copper.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports 48 V input bus with 2× safety margin for transient clamping in DC-DC converters.
R_DS(on) max	11.5 mΩ @ V_GS = 10 V - Enables ≤1.2 W conduction loss at 32 A, critical for compact 65 W adapter designs.
Q_g	9.2 nC @ 0–4.5 V - Minimizes gate drive power and enables use with low-current 3.3/5 V microcontrollers.
Q_oss	24 nC - Reduces turn-off energy loss in high-frequency (>500 kHz) resonant and LLC topologies.
t_r/t_f	4.8 ns / 3.2 ns - Supports clean edge control in GaN-assisted hybrid half-bridges and active clamp flyback.
R_thJC	1.2 °C/W - Allows direct thermal coupling to heatsink via exposed drain pad, enabling >50 W dissipation at ΔT = 60 °C.
V_GS(th)	1.1–2.3 V - Ensures reliable enhancement-mode turn-on with standard logic-level drivers, no bootstrap needed.

Pinout & Package

PG-TSDSON-8 FL is a thermally enhanced leadless package with 0.5 mm pitch, 3.3 mm × 3.3 mm footprint, and exposed drain pad on bottom side for optimal heat transfer. Drain terminals occupy pins 5–8; gate is pin 4; source connects to pins 1–3.

Pin/Terminal	Circuit Role	Design Meaning
1–3 (Source)	Source connection	Low-inductance parallel path for return current; tied directly to ground plane for EMI control.
4 (Gate)	Control terminal	High-impedance input requiring <1.6 Ω external series resistor to damp ringing during fast switching.
5–8 (Drain)	Power output terminal	Exposed metal pad on underside-must be soldered to ≥6 cm² copper area for rated 60 W thermal performance.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.5 V, eliminating need for gate driver ICs in 3.3 V/5 V MCU-controlled SMPS.
100% avalanche rated	Withstands 60 mJ single-pulse avalanche energy (I_D = 20 A), enabling robustness in inductive load switching without snubbers.
Optimized Q_g/Q_oss ratio	Q_g/Q_oss = 0.38 - Balances switching speed and shoot-through immunity in synchronous buck converters.
JEDEC-qualified reliability	Validated per JESD47 stress testing, supporting 15-year field life in industrial power supplies and server VRMs.
Halogen-free & RoHS	Complies with IEC61249-2-21 and EU RoHS Directive 2011/65/EU for green manufacturing and end-of-life recycling.

Applications

USB-C Power Delivery Adapter

Laptop AC-DC Front-End

Use Scenario: Primary-side switch in 65 W quasi-resonant flyback converter operating at 130 kHz.

IC Role / Device Role: High-side switching element handling 100 V DC bus, synchronized with controller's zero-voltage switching signal.

Use Value: 11.5 mΩ R_DS(on) and 24 nC Q_oss reduce total switching + conduction loss to <1.8 W, enabling >94% efficiency at full load.

Use Scenario: Secondary-side synchronous rectifier in 90 W LLC resonant converter with 20 V output.

IC Role / Device Role: Low-side rectifying MOSFET replacing Schottky diode, driven by transformer-coupled gate signal.

Use Value: Body diode t_rr = 30 ns and V_SD = 0.87 V minimize reverse recovery loss and forward drop, improving light-load efficiency by 2.3%.

Industrial 48 V DC-DC Converter

Server Voltage Regulator Module (VRM)

Use Scenario: High-side switch in isolated 48 V–12 V bidirectional buck-boost converter for battery backup systems.

IC Role / Device Role: Bidirectional power switch controlling energy flow between 48 V bus and 12 V battery bank.

Use Value: 100% avalanche rating ensures survival during 48 V bus transients up to 120 V, eliminating external TVS diodes.

Use Scenario: High-side FET in multiphase 48 V–0.8 V VRM for AI accelerators, switching at 1 MHz.

IC Role / Device Role: Phase-leg switch in 6-phase interleaved buck converter with digital PWM controller.

Use Value: 6.7 ns t_d(on) and 3.2 ns t_f enable precise phase alignment and <50 ps timing skew across phases.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB070N10N5	R_DS(on) = 7.0 mΩ @ 10 V, but Q_g = 22 nC - higher drive loss, slower switching (t_f = 5.1 ns).	Better conduction efficiency above 40 A; less suitable for >300 kHz operation due to higher Q_g.	Select when thermal budget allows larger die and primary concern is steady-state loss over switching loss.
SISS08DN	R_DS(on) = 12.5 mΩ @ 4.5 V, Q_oss = 31 nC - higher turn-off loss, no JEDEC qualification data published.	Compatible pinout but unverified for industrial temperature cycling or long-term reliability in server VRMs.	Acceptable for cost-sensitive consumer adapters where 15-year lifetime is not required.

Compared with IPB070N10N5 and SISS08DN, ISZ0804NLSATMA1 delivers superior high-frequency efficiency (lower Q_g/Q_oss) and certified ruggedness for mission-critical power stages, making it optimal for USB PD 3.1 and AI server VRM designs demanding both speed and reliability.

Availability

ISZ0804NLSATMA1 is available at Aetrix Electronics and suitable for USB-C power adapters, laptop AC-DC front-ends, and industrial 48 V DC-DC converters requiring stable component supply, JEDEC-qualified reliability, and thermally efficient surface-mount packaging.

Supply support for ISZ0804NLSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and wafer fabrication facilities.

This device belongs to the OptiMOSTM5 family-designed specifically for high-efficiency, high-frequency power conversion in computing, consumer charging, and industrial SMPS, emphasizing low gate charge and rugged avalanche performance.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

At T_C = 100 °C, the continuous drain current is derated to 37 A per Table 2 of the datasheet. This value is determined by thermal limits and assumes proper PCB copper area (6 cm²) and still-air conditions. Operation beyond this requires thermal modeling using the provided Z_thJC curves and actual board layout.

Can ISZ0804NLSATMA1 be used in synchronous rectification without external gate driving circuitry?

Yes-it supports self-driven synchronous rectification when the source is referenced to output voltage and gate is coupled via a small capacitor and Zener clamp. The 1.1–2.3 V V_GS(th) range and low Q_g allow reliable turn-on with minimal auxiliary components, though layout-dependent ringing must be mitigated with gate resistors ≤10 Ω.

Is the PG-TSDSON-8 FL package compatible with standard reflow profiles for lead-free assembly?

Yes-the package is qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 1 and supports peak reflow temperatures up to 260 °C for 30 seconds. The exposed drain pad requires Type 3 or Type 4 solder paste and stencil aperture design matching Infineon's recommended 80% fill pattern to ensure void-free thermal interface.

Does the body diode support continuous conduction mode (CCM) in buck converters?

Yes-the body diode is rated for 52 A continuous forward current at T_C = 25 °C and exhibits 0.87 V V_SD at 20 A, making it suitable for CCM operation in high-current buck regulators. However, its 30 ns t_rr and 26 nC Q_rr necessitate careful dead-time optimization to avoid cross-conduction losses.

ISZ0804NLSATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta), 58A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 28µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 60W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSDSON-8-26

ISZ0804NLSATMA1 FAQ

1.How can I place an order for ISZ0804NLSATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISZ0804NLSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISZ0804NLSATMA1 reliable?

The price and inventory of ISZ0804NLSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISZ0804NLSATMA1 is usually 5 days.

3.What payment methods are accepted for ISZ0804NLSATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISZ0804NLSATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISZ0804NLSATMA1?

ISZ0804NLSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISZ0804NLSATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISZ0804NLSATMA1?

For technical support, including ISZ0804NLSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISZ0804NLSATMA1 requirements.

6.How does Aetrix verify that ISZ0804NLSATMA1 is sourced from the original manufacturer or authorized distributors?

All ISZ0804NLSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISZ0804NLSATMA1 meets industry standards.

7.What is the process for return or replacement of ISZ0804NLSATMA1?

All ISZ0804NLSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISZ0804NLSATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISZ0804NLSATMA1 part is unused and in its original packaging.

Return procedure for ISZ0804NLSATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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