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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7832Z

Name: IRF7832Z
Brand: Infineon Technologies
SKU: IRF7832Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7832Z

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7832Z.pdf

Description:: MOSFET N-CH 30V 21A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:3,457

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Product details

Overview

IRF7832Z from Infineon Technologies (formerly International Rectifier) is a 30V, 21A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized as a synchronous rectifier FET in isolated DC-DC converters and as a control FET in notebook CPU VRMs. It delivers 3.1 mΩ R_DS(on) at V_GS = 10 V, 30 nC total gate charge, and fully characterized avalanche capability up to 350 mJ.

For engineers reviewing the IRF7832Z datasheet, IRF7832Z pinout, IRF7832Z application, or IRF7832Z equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, ultra-low gate impedance (1.2–1.9 Ω), robust body diode recovery (Q_rr = 29–44 nC, t_rr = 16–24 ns), and SO-8 thermal performance (R_θJA = 50 °C/W).

Technical Context

This MOSFET employs planar silicon process with trench-enhanced charge balance for high current density and low conduction loss. Its gate structure minimizes Q_gd/Q_gs1 ratio (≈1.4) to suppress C_dv/dt turn-on in high-dV/dt synchronous buck and flyback topologies.

Designed for unclamped inductive switching, it supports 16 A pulsed drain current and withstands 30 V V_DS with 0.023 V/°C breakdown voltage temperature coefficient. The integral body diode exhibits 1.0 V forward drop at 16 A and is fully rated for reverse recovery under 500 A/µs di/dt.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and 12 V output synchronous rectification
R_DS(on) max @ 10 V	3.8 mΩ - Enables ≤0.8 W conduction loss at 20 A RMS in 50% duty-cycle applications
Q_g	30 nC - Determines gate driver power requirement and switching speed in 300–1000 kHz converters
Q_rr	29–44 nC - Directly impacts shoot-through risk and loss transfer to primary-side FET in synchronous designs
R_θJA	50 °C/W - Limits continuous power dissipation to 1.6 W at 70 °C ambient without heatsinking
E_AS	350 mJ - Supports reliable operation under single-pulse inductive energy stress in VRM and adapter circuits
V_GS(th)	1.35–2.35 V - Ensures clean turn-on with standard 3.3 V or 5 V logic-level gate drivers

Pinout & Package

IRF7832Z uses an SO-8 surface-mount package with exposed drain pad for enhanced thermal performance. Pin 1–3 and 5–7 are drain terminals; Pin 4 is gate; Pins 6 and 8 are source terminals (dual-source configuration).

Pin/Terminal	Circuit Role	Design Meaning
1,2,3,5,7	Drain (D)	High-current output node connected to PCB copper pour for thermal and electrical conduction
4	Gate (G)	Control input requiring <30 nC charge; sensitive to dV/dt coupling from switching node
6,8	Source (S)	Return path for load current; dual pins reduce source inductance and improve di/dt immunity

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	4.5 mΩ - Enables efficient operation with 5 V gate drive in cost-sensitive notebook VRMs
Fully characterized avalanche	350 mJ E_AS, 16 A I_AR - Eliminates need for external snubbers in non-isolated DC-DC stages
Low Q_gd/Q_gs1 ratio	≈1.4 - Reduces susceptibility to false turn-on during high dV/dt transitions at switch node
100% R_g tested	1.2–1.9 Ω - Guarantees consistent gate drive timing and reduces gate oscillation risk
Body diode t_rr & Q_rr specified	t_rr = 16–24 ns, Q_rr = 29–44 nC - Enables accurate loss modeling in synchronous rectifier simulations

Applications

Notebook CPU Voltage Regulator

Isolated Flyback DC-DC Converter

Use Scenario: High-efficiency 1–2 phase VRM supplying 1–2 V/30 A to Intel/AMD mobile processors.

IC Role / Device Role: Synchronous rectifier FET replacing Schottky diode on secondary side of multiphase buck converter.

Use Value: Reduces conduction loss by >40% vs. 5 mΩ alternatives while maintaining fast body diode recovery for light-load efficiency.

Use Scenario: 12 V output, 65 W isolated flyback adapter for industrial IoT gateways.

IC Role / Device Role: Secondary-side synchronous rectifier MOSFET replacing 40 V Schottky diode.

Use Value: Achieves >92% full-load efficiency by cutting secondary-side loss; SO-8 footprint simplifies layout vs. TO-220 alternatives.

USB-C PD Power Delivery Module

Telecom DC-DC Intermediate Bus Converter

Use Scenario: 20 V/5 A USB-C PD 3.0 fixed-output module with tight thermal envelope.

IC Role / Device Role: Primary-side control FET in active-clamp forward topology.

Use Value: Low Q_g and R_DS(on) enable 500 kHz switching with <1.2 W total loss at 25 A peak current.

Use Scenario: 48 V to 12 V intermediate bus converter in telecom base station power shelf.

IC Role / Device Role: Synchronous rectifier in half-bridge LLC resonant stage.

Use Value: Dual-source pins and low Q_rr minimize shoot-through during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 3.3 mΩ @ 10 V; Q_g = 32 nC; SO-8 package	Slightly higher gate charge increases driver loss at >1 MHz; identical thermal footprint	Preferred where tighter R_DS(on) tolerance (±10%) is required over avalanche rating
IPB036N04LG	40 V V_DS, R_DS(on) = 3.6 mΩ @ 10 V, PG-HSOF-8 package	Higher voltage rating adds margin for 36 V input systems but increases capacitance (C_iss = 4200 pF)	Chosen when system requires 40 V blocking and JEDEC-compliant HSOF-8 mechanical compatibility

Compared with Si7852DP-T1-GE3 and IPB036N04LG, IRF7832Z offers superior avalanche ruggedness (350 mJ vs. 220 mJ and 280 mJ) and lower Q_gd/Q_gs1, making it more robust in high-dV/dt synchronous rectifier roles despite marginally higher R_DS(on).

Availability

IRF7832Z is available at Aetrix Electronics and suitable for notebook VRMs, isolated DC-DC adapters, USB-C PD modules, and telecom intermediate bus converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF7832Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF7832Z belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency synchronous rectification and control FET applications in portable and server power supplies.

FAQ

What is the maximum continuous drain current for IRF7832Z at 70°C ambient?

The maximum continuous drain current is 17 A at T_A = 70°C with SO-8 mounted on 1 in² 2-oz copper PCB, per datasheet Figure 9. This derating accounts for R_θJA = 50 °C/W and T_J(max) = 150°C, yielding 1.6 W allowable power dissipation.

Does IRF7832Z support 3.3 V gate drive in logic-level applications?

Yes - its V_GS(th) range (1.35–2.35 V) and R_DS(on) = 4.5 mΩ @ V_GS = 4.5 V ensure reliable enhancement-mode turn-on with 3.3 V microcontroller outputs. However, full 3.1 mΩ conduction requires ≥10 V gate drive.

How is the SO-8 package thermally enhanced for power dissipation?

The SO-8 package features an exposed drain pad soldered directly to PCB copper, reducing R_θJL to 20 °C/W (junction-to-drain lead). This allows >2× improvement in thermal transfer versus standard SO-8, enabling 1.6 W continuous dissipation at 70°C ambient.

Can IRF7832Z replace a Schottky diode in synchronous rectification without gate driver redesign?

No - it requires an active gate driver referenced to the source node, capable of delivering ≥30 nC at ≥10 V. Unlike passive diodes, it needs precise timing control to avoid shoot-through; typical implementations use dedicated synchronous rectifier controllers like IR1167 or UCC24612.

IRF7832Z Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3860 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7832Z FAQ

1.How can I place an order for IRF7832Z through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7832Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7832Z reliable?

The price and inventory of IRF7832Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7832Z is usually 5 days.

3.What payment methods are accepted for IRF7832Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7832Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7832Z?

IRF7832Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7832Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7832Z?

For technical support, including IRF7832Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7832Z requirements.

6.How does Aetrix verify that IRF7832Z is sourced from the original manufacturer or authorized distributors?

All IRF7832Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7832Z meets industry standards.

7.What is the process for return or replacement of IRF7832Z?

All IRF7832Z units undergo pre-shipment inspection (PSI). If there is an issue with IRF7832Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7832Z part is unused and in its original packaging.

Return procedure for IRF7832Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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