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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies 94-2386

Name: 94-2386
Brand: Infineon Technologies
SKU: 94-2386
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 94-2386

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: 94-2386.pdf

Description:: MOSFET N-CH 55V 49A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF530S from Infineon Technologies is a 100V, 49A N-channel enhancement-mode MOSFET in TO-262 (DPAK) package, featuring 17.5 mΩ R_DS(on) at V_GS = 10V, 160A pulsed drain current, and 94W power dissipation at T_C = 25°C. It serves as a high-current switching device in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the IRF530S datasheet, IRF530S pinout, IRF530S application, or IRF530S equivalent, key selection criteria include its 100V V_(BR)DSS, low 17.5 mΩ on-resistance, 63 nC total gate charge, robust avalanche rating (E_AS = 530 mJ), and thermal resistance of 1.5°C/W junction-to-case - all critical for high-efficiency, thermally constrained power stage designs.

Technical Context

This MOSFET employs a planar silicon process optimized for ruggedness and fast switching in hard-switched topologies. Its body diode exhibits 63–95 ns reverse recovery time and 170–260 nC Q_rr under 25A/100A/µs conditions, enabling moderate-frequency synchronous rectification or freewheeling with controlled voltage overshoot.

The device supports gate drive with standard 10V logic-level signals and delivers 19 S forward transconductance at V_DS = 25V. Its 0.058 V/°C breakdown voltage temperature coefficient and normalized R_DS(on) stability up to 175°C ensure predictable performance across industrial temperature ranges.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	100 V - Withstands 100V drain-source blocking voltage before avalanche onset; defines maximum bus voltage compatibility.
R_DS(on)	17.5 mΩ @ V_GS = 10V, I_D = 25A - Directly determines conduction loss (P_cond = I² × R) in continuous high-current operation.
Q_g	63 nC - Governs gate driver power requirement and switching speed; impacts turn-on/turn-off energy loss.
E_AS	530 mJ - Specifies single-pulse avalanche energy handling capability; enables safe operation during inductive load switching faults.
R_θJC	1.5 °C/W - Junction-to-case thermal resistance; used with heatsink interface to calculate maximum allowable power at given case temperature.
I_D @ T_C = 100°C	35 A - Continuous drain current derated for elevated case temperatures; sets practical current limit in thermally constrained layouts.
trr / Q_rr	63–95 ns / 170–260 nC - Body diode reverse recovery metrics; determine snubber sizing and voltage spike risk during commutation.

Pinout & Package

IRF530S is housed in a TO-262 (DPAK) surface-mount package with exposed drain pad for thermal and electrical connection. The package features gull-wing leads compatible with standard reflow soldering processes and provides low-inductance source/drain paths.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current output terminal	Electrically and thermally connected to exposed copper pad; must be soldered to PCB copper pour for thermal management and low-impedance return path.
Gate	Control input	High-impedance MOS gate requiring clean, low-inductance drive; threshold voltage range 2.0–4.0 V ensures TTL/CMOS compatibility.
Source	Reference node for gate drive and current sensing	Common return path for load current; internal source inductance (L_S = 7.5 nH) affects switching waveform ringing and gate oscillation risk.

Key Features

Feature	Design Value
100V V_(BR)DSS rating	Enables use in 48V and 72V industrial bus systems with margin for transient overvoltage events.
17.5 mΩ R_DS(on)	Reduces conduction losses below 2.2 W at 30A DC, supporting compact thermal design without forced air cooling.
530 mJ E_AS	Allows reliable operation in inductive switching applications without external clamping circuits under defined fault conditions.
TO-262 (DPAK) package	Provides superior thermal performance vs. TO-220 while maintaining surface-mount assembly compatibility and reduced board space.
Lead-free construction	Complies with RoHS Directive 2011/65/EU; marked with "P" in assembly line position per Infineon lot code convention.

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Buck Converter

Use Scenario: High-side switch in 24–48V brushed DC motor control with PWM frequency ≤20 kHz.

IC Role / Device Role / Timing Role: Power switching element conducting load current during high-side active period; body diode handles freewheeling when low-side is active.

Use Value: Low R_DS(on) minimizes I²R heating during continuous 35A operation; 100V rating accommodates back-EMF spikes up to 80V.

Use Scenario: Synchronous rectifier in 12V-output, 50A industrial buck converter operating at 100–300 kHz.

IC Role / Device Role / Timing Role: Low-side switch replacing Schottky diode to reduce conduction loss; driven complementary to high-side MOSFET.

Use Value: 17.5 mΩ on-resistance cuts conduction loss by >60% vs. 40V Schottky; Q_rr < 260 nC limits reverse recovery loss during dead-time transitions.

Uninterruptible Power Supply (UPS) Inverter

Industrial Solenoid Driver

Use Scenario: Output stage switch in 120VAC line-frequency inverter using full-bridge topology with 50/60 Hz PWM.

IC Role / Device Role / Timing Role: Main power switch handling bidirectional current flow; body diode conducts during half-cycle freewheeling.

Use Value: 160A pulsed rating supports surge currents during motor startup; 175°C max junction temperature ensures reliability under sustained overload.

Use Scenario: High-current solenoid actuator driver in factory automation, energized for ≤500 ms per cycle.

IC Role / Device Role / Timing Role: Single-ended switch controlling inductive load; requires robust avalanche capability during turn-off.

Use Value: 530 mJ E_AS safely absorbs stored inductor energy without external snubber; 100V rating covers 48V system with 100% margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP100NF10	100V, 100A, R_DS(on) = 12.5 mΩ, TO-220 package, higher capacitance (C_iss = 2200 pF)	Higher peak current but larger footprint and higher gate charge (120 nC); less suitable for high-frequency switching	Prefer for lower conduction loss in low-frequency, high-current linear regulation or relay replacement
IXTP120N10T	100V, 120A, R_DS(on) = 9.5 mΩ, TO-220AB package, enhanced avalanche rating (E_AS = 1000 mJ)	Superior ruggedness and lower on-resistance but larger thermal resistance (R_θJC = 1.8°C/W)	Prefer where extreme avalanche stress or ultra-low conduction loss dominates over thermal interface optimization

Compared with STP100NF10 and IXTP120N10T, IRF530S offers optimal balance of thermal efficiency (1.5°C/W), surface-mount compatibility (TO-262), and gate drive simplicity (63 nC), making it ideal for space-constrained, medium-frequency industrial power stages where board area and thermal management are prioritized over absolute peak current.

Availability

IRF530S is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and industrial solenoid control requiring stable component supply and long-term production continuity.

Supply support for IRF530S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF530S belongs to Infineon's legacy HEXFET® power MOSFET product line, engineered for high-reliability industrial switching applications demanding ruggedness, predictable thermal behavior, and proven field performance.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF530S supports 35 A continuous drain current when the case temperature is maintained at 100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 49 A rating at 25°C case temperature, based on the device's thermal resistance and power dissipation limits.

Does the IRF530S have integrated gate protection?

No, the IRF530S does not include integrated gate protection circuitry such as Zener clamps or series resistors. External gate resistor (typically 10–47 Ω) and TVS diode (e.g., 18V) are recommended to limit dv/dt-induced gate stress and prevent overvoltage during fast switching transients.

Can the IRF530S be used in avalanche mode repeatedly?

The IRF530S is rated for repetitive avalanche energy (E_AR) of 9.4 mJ per pulse, verified under specified test conditions (IAS = 25A, L = 0.48 mH). Operation beyond this limit or outside the defined pulse width (≤400 µs) and duty cycle (≤2%) risks parametric shift or failure.

Is the TO-262 package lead-free compliant?

Yes, the IRF530S is lead-free compliant per RoHS Directive 2011/65/EU. The "P" designation in the assembly line position of the lot code (e.g., "LF530S P") confirms lead-free finish, and the device uses matte tin plating on leads and termination surfaces.

94-2386 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 49A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 17.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1470 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 94W (Tc)

Operating Temperature:: -55°C ~ 155°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

94-2386 FAQ

1.How can I place an order for 94-2386 through Aetrix?

Please submit a Request for Quotation (RFQ) for 94-2386 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 94-2386 reliable?

The price and inventory of 94-2386 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 94-2386 is usually 5 days.

3.What payment methods are accepted for 94-2386?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 94-2386 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 94-2386?

94-2386 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 94-2386 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 94-2386?

For technical support, including 94-2386 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 94-2386 requirements.

6.How does Aetrix verify that 94-2386 is sourced from the original manufacturer or authorized distributors?

All 94-2386 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 94-2386 meets industry standards.

7.What is the process for return or replacement of 94-2386?

All 94-2386 units undergo pre-shipment inspection (PSI). If there is an issue with 94-2386, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 94-2386 part is unused and in its original packaging.

Return procedure for 94-2386:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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