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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7811

Name: IRF7811
Brand: Infineon Technologies
SKU: IRF7811
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7811

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7811.pdf

Description:: MOSFET N-CH 28V 14A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:3,577

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Product details

Overview

IRF7811 from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode MOSFET designed for synchronous rectification in high-efficiency, high-current DC-DC converters-specifically CPU core power stages. It features 28 V V_DS, 11 mΩ R_DS(on) @ 4.5 V_GS, 14 A continuous drain current at T_L = 90°C, and 23 nC total gate charge, enabling fast switching with low conduction loss in compact SO-8 packages.

For engineers reviewing the IRF7811 datasheet, IRF7811 pinout, IRF7811 application in CPU VRMs, or IRF7811 equivalent for synchronous buck topologies, this device delivers verified low Q_sw (7 nC), low Q_oss (31 nC), and thermal resistance of 20°C/W (junction-to-lead), critical for thermally constrained mobile processor power delivery.

Technical Context

The IRF7811 operates as a low-side synchronous rectifier FET in multiphase buck converters, where its 11 mΩ on-resistance minimizes I²R losses under high DC load currents up to 14 A. Its 23 nC gate charge and 7 nC switching charge enable efficient drive with standard gate drivers while maintaining low EMI due to controlled dV/dt.

It employs CopperStrap™ interconnect technology in an SO-8 package to reduce both electrical resistance and thermal resistance-achieving R_θJL = 20°C/W and supporting 3.0 W power dissipation at 90°C lead temperature-making it suitable for space-constrained, high-power-density VRM designs without forced airflow.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	28 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in notebook/desktop CPU VRMs
R_DS(on)	11 mΩ @ V_GS = 4.5 V, I_D = 15 A - Enables <1.7 W conduction loss at 14 A, reducing thermal stress in dense layouts
Q_G	23 nC @ V_GS = 5 V - Matches standard PWM controller gate drive capability without requiring external buffers
Q_sw	7 nC - Low switching charge reduces driver power loss and enables >1 MHz operation with minimal dead-time penalty
R_θJL	20 °C/W - Enables direct thermal coupling to PCB copper pour or heatsink via exposed lead frame, improving reliability
I_D (T_L = 90°C)	13 A - Sustained current rating under realistic board-level thermal conditions, not ambient-only derating
V_GS(th)	1.0 V - Ensures robust turn-on with 3.3 V or 5 V logic-level gate drive, avoiding partial enhancement in noise-prone environments

Pinout & Package

IRF7811 is housed in a surface-mount SO-8 package with exposed source leads (pins 1–3, 5–7) and integrated CopperStrap™ interconnect for enhanced thermal and electrical performance. The package supports hand-soldering and reflow profiles per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 6, 7	Source (S)	Common source connection for low-side switch; pins 1–3 and 5–7 are internally paralleled for reduced resistance and improved thermal spreading
4	Gate (G)	Control terminal; accepts 0–12 V logic-level drive; 1.0 V threshold ensures compatibility with 3.3 V controllers
8	Drain (D)	Power output node connected to inductor; tied to internal die backside and exposed pad for thermal path to PCB

Key Features

Feature	Design Value
CopperStrap™ interconnect	Reduces package R_DS(on) contribution by >30% and lowers R_θJL to 20°C/W vs. standard SO-8
Low Q_sw/Q_oss ratio	7 nC / 31 nC = 0.23 - Minimizes switching loss relative to output capacitance, improving light-load efficiency
100% R_DS(on) tested	Guarantees worst-case on-resistance ≤ 11 mΩ at 4.5 V_GS, eliminating design margin uncertainty
Body diode Q_rr	82 nC - Low reverse recovery charge reduces shoot-through risk and EMI during synchronous rectification

Applications

Mobile CPU Core VRM

Server DDR Memory Regulator

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.3 V to ARM or x86 mobile processors with dynamic current steps up to 100 A/µs.

IC Role / Device Role: Low-side synchronous rectifier FET in each phase leg, operating with 500 kHz–1.5 MHz switching frequency.

Use Value: 11 mΩ R_DS(on) and 7 nC Q_sw jointly reduce conduction + switching loss by ≥18% vs. legacy SO-8 MOSFETs, enabling smaller inductors and fewer phases.

Use Scenario: Point-of-load regulator delivering 1.2 V/30 A to DDR4/DDR5 memory subsystems in edge servers with strict thermal envelope limits.

IC Role / Device Role: Secondary-side power switch in interleaved buck stage, driven by dedicated gate controller with adaptive dead-time control.

Use Value: R_θJL = 20°C/W allows full 13 A current at 90°C lead temp without heatsinks, reducing BOM count and board area by 22% vs. TO-252 alternatives.

Industrial PLC I/O Power Module

Automotive ADAS Domain Controller Supply

Use Scenario: 5 V/10 A auxiliary rail generation in programmable logic controller backplanes with wide ambient temperature range (−40°C to +85°C).

IC Role / Device Role: Primary low-side switch in isolated flyback secondary synchronous rectifier stage.

Use Value: 1.0 V V_GS(th) ensures reliable turn-on across full temperature range with 3.3 V microcontroller GPIO, eliminating external level shifters.

Use Scenario: 1.8 V/8 A core supply for radar SoCs in automotive domain controllers, subject to AEC-Q101 stress testing and ISO 16750-2 load dump transients.

IC Role / Device Role: High-reliability low-side FET in dual-phase buck converter with active current balancing.

Use Value: 100% R_DS(on) screening and −55°C to +150°C T_J rating meet functional safety requirements for ASIL-B systems without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel synchronous rectifier MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP	30 V V_DS, 8.5 mΩ R_DS(on), 32 nC Q_G, PowerPAK® SO-8	Higher R_DS(on) but lower gate charge than IRF7809; not optimized for ultra-low Q_sw	Preferred when lower conduction loss outweighs switching speed needs in <500 kHz designs
DMN3025LSD	30 V V_DS, 2.5 mΩ R_DS(on), 42 nC Q_G, SO-8	Lower R_DS(on) but higher Q_G and Q_sw; no CopperStrap™ thermal path	Selected for highest current density where board-level cooling is available and gate drive strength is sufficient

Compared with SiR872DP and DMN3025LSD, the IRF7811 uniquely balances ultra-low Q_sw (7 nC) and moderate R_DS(on) (11 mΩ) within a thermally optimized SO-8, making it optimal for high-frequency, thermally constrained CPU VRMs where switching loss dominates total loss.

Availability

IRF7811 is available at Aetrix Electronics and suitable for mobile CPU VRMs, server DDR memory regulators, industrial PLC I/O modules, and automotive ADAS domain controller supplies requiring stable component supply and long-term lifecycle support.

Supply support for IRF7811 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with heritage from International Rectifier's HEXFET® MOSFET innovation.

The IRF7811 belongs to Infineon's application-specific power MOSFET product line, engineered explicitly for high-efficiency, high-current synchronous buck converters in computing and communications infrastructure.

FAQ

What is the maximum recommended gate drive voltage for IRF7811?

The absolute maximum gate-source voltage is ±12 V, but the device is fully characterized and optimized for 4.5 V to 5 V gate drive in synchronous buck applications. Driving above 5 V yields diminishing R_DS(on) improvement while increasing gate oxide stress and Q_G-related losses-designs should target 4.5 V nominal drive with ±0.5 V tolerance.

Can IRF7811 be used as a high-side switch?

No-IRF7811 is a standard-threshold N-channel MOSFET with no integrated bootstrap circuitry or level-shifting capability. Its 1.0 V gate threshold and lack of floating supply support make it unsuitable for high-side switching; it is validated exclusively for low-side synchronous rectification in buck, flyback, and multiphase topologies.

Does IRF7811 require a gate resistor for stability?

A small gate resistor (2–10 Ω) is recommended to dampen ringing caused by PCB trace inductance interacting with the device's 1.5 Ω intrinsic gate resistance and 1800 pF C_iss. This improves EMI performance and prevents false turn-on during fast dV/dt events, especially in multi-phase layouts with shared gate drive traces.

How does CopperStrap™ technology improve thermal performance over standard SO-8?

CopperStrap™ replaces conventional aluminum bond wires with direct copper straps between die and lead frame, reducing both electrical resistance (lowering R_DS(on)) and thermal resistance (R_θJL = 20°C/W vs. typical 35°C/W). This enables 30% higher power density and eliminates hotspots at wire-bond interfaces under pulsed current loads.

IRF7811 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 28 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 15A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 1800 pF @ 16 V

FET Feature:: -

Power Dissipation (Max):: 3.5W (Ta)

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7811 FAQ

1.How can I place an order for IRF7811 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7811 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7811 reliable?

The price and inventory of IRF7811 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7811 is usually 5 days.

3.What payment methods are accepted for IRF7811?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7811 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7811?

IRF7811 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7811 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7811?

For technical support, including IRF7811 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7811 requirements.

6.How does Aetrix verify that IRF7811 is sourced from the original manufacturer or authorized distributors?

All IRF7811 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7811 meets industry standards.

7.What is the process for return or replacement of IRF7811?

All IRF7811 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7811, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7811 part is unused and in its original packaging.

Return procedure for IRF7811:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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