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Infineon Technologies IRL2505STRL
- Part No.:
- IRL2505STRL
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRL2505STRL.pdf
- Description:
- MOSFET N-CH 55V 104A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,515
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Product details
Overview
IRL2505STRL from Infineon Technologies (formerly International Rectifier) is a 55 V, 110 A, 0.008 Ω RDS(on) N-channel HEXFET® Power MOSFET in TO-262 (DPAK) package, optimized for high-current DC-DC conversion, motor control, and battery protection circuits operating at 10 V gate drive.
For engineers reviewing the IRL2505STRL datasheet, IRL2505STRL pinout, IRL2505STRL application, or IRL2505STRL equivalent, this part supports high-pulse-current switching up to 110 A with low conduction loss, fast 40 ns turn-on delay, and robust avalanche energy rating of 190 mJ - critical for automotive body electronics and industrial power supplies.
Technical Context
This logic-level MOSFET features a planar stripe cell structure enabling low on-resistance at VGS = 10 V and stable operation up to TJ = 175 °C. Its gate charge profile (QG = 71 nC, QGD = 28 nC) supports efficient PWM switching at frequencies up to 100 kHz in synchronous buck converters.
The device integrates an intrinsic body diode with trr = 110 ns and QRR = 120 nC under IF = 54 A, VDD = 44 V conditions, making it suitable for freewheeling and reverse recovery–sensitive topologies like half-bridge inverters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - Maximum drain-source blocking voltage; defines safe operating range in 48 V battery systems. |
| RDS(on) @ VGS = 10 V | 0.008 Ω - Enables ≤0.97 W conduction loss at 110 A; reduces heatsink requirements in high-current PCB layouts. |
| ID (continuous) | 110 A - Rated continuous drain current at TC = 25 °C; derates to 70 A at TC = 100 °C per thermal resistance curve. |
| QG | 71 nC - Total gate charge; determines driver strength needed for <1 µs switching transitions at 12 V gate drive. |
| EAS | 190 mJ - Single-pulse avalanche energy at TJ = 25 °C; provides margin against inductive switching transients in motor drives. |
| td(on) | 40 ns - Turn-on delay time; enables precise timing control in high-frequency synchronous rectification. |
| Ciss | 2200 pF - Input capacitance at VDS = 25 V; impacts gate driver power dissipation and EMI filtering design. |
Pinout & Package
IRL2505STRL uses the TO-262 (DPAK) surface-mount package with exposed drain pad for thermal enhancement. The three-terminal configuration supports high-current PCB mounting with minimal trace inductance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output | Internally connected to metal tab; must be soldered to large copper pour for thermal management and low-inductance return path. |
| Source | Reference node for gate drive and current sensing | Low-impedance source terminal; used for Kelvin sensing in precision current monitoring applications. |
| Gate | Control input for channel conduction | Logic-compatible threshold (VGS(th) = 2.0 V typ); requires <100 Ω series resistor to suppress ringing during fast switching. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) at 10 V drive | 0.008 Ω enables <1 W conduction loss at 110 A - reduces thermal stress in compact power modules. |
| 175 °C maximum junction temperature | Rated for sustained operation in engine bay or industrial enclosures without forced air cooling. |
| 100% avalanche rated | Guaranteed single-pulse EAS = 190 mJ supports reliable operation in inductive load switching without external snubbers. |
| Fast body diode recovery | trr = 110 ns and QRR = 120 nC minimize switching losses and voltage overshoot in freewheeling paths. |
| Lead-free and RoHS compliant | Meets IPC-J-STD-020 moisture sensitivity level 1; suitable for lead-free reflow assembly without pre-baking. |
Applications
| Automotive Battery Disconnect | Industrial DC Motor Drive |
|---|---|
Use Scenario: High-side main battery switch in 12 V/24 V vehicle power distribution units. IC Role / Device Role / Timing Role: Power MOSFET acting as controlled isolation element between battery and load bus. Use Value: 0.008 Ω RDS(on) limits voltage drop to <0.88 V at 110 A, preserving system efficiency and reducing thermal derating. | Use Scenario: H-bridge low-side switch in 48 V BLDC motor controllers for material handling equipment. IC Role / Device Role / Timing Role: Synchronous rectifier in PWM-driven half-bridge leg with 20 µs pulse capability. Use Value: 40 ns td(on) and 71 nC QG support precise dead-time control and <100 kHz switching without shoot-through risk. |
| Server PSU OR-ing FET | Solar Charge Controller Switch |
Use Scenario: Hot-swap OR-ing diode replacement in redundant 12 V server power supply outputs. IC Role / Device Role / Timing Role: Low-loss pass transistor replacing Schottky diodes in parallel power paths. Use Value: Conduction loss reduced by >75% vs. 40 V Schottky, lowering board temperature rise and improving power density. | Use Scenario: High-current battery-side switch in MPPT solar charge controllers for off-grid 24 V battery banks. IC Role / Device Role / Timing Role: Bidirectional blocking switch managing charge/discharge current flow between PV array and battery. Use Value: 190 mJ EAS withstands inductive kickback from solenoid-based MPPT actuation without failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1405PBF | RDS(on) = 0.0055 Ω @ 10 V, but higher QG = 130 nC and larger TO-220 package. | Better conduction loss but slower switching; less suitable for high-frequency SMPS. | Prefer when thermal budget allows larger heatsink and switching frequency <50 kHz. |
| STP110N55F6 | RDS(on) = 0.0075 Ω @ 10 V, lower Ciss = 1700 pF, but only rated to 175 °C with 100 A ID. | Improved EMI performance due to lower input capacitance; slightly lower current headroom. | Choose for space-constrained designs needing faster gate drive response and tighter layout control. |
Compared with IRL2505STRL, IRF1405PBF offers lower on-resistance but demands stronger gate drivers and more board area, while STP110N55F6 trades minor RDS(on) improvement for better high-frequency behavior and tighter thermal margins at full current.
Availability
IRL2505STRL is available at Aetrix Electronics and suitable for automotive battery management, industrial motor control, and renewable energy power conversion requiring stable component supply across multi-year production cycles.
Supply support for IRL2505STRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with core expertise in silicon and wide-bandgap power devices.
The IRL2505STRL belongs to Infineon's legacy HEXFET® logic-level MOSFET product line, engineered for high-current, low-voltage switching in cost-sensitive industrial and transportation systems where gate drive simplicity and thermal robustness are essential.
FAQ
What is the maximum continuous drain current for IRL2505STRL at 100 °C case temperature?
At TC = 100 °C, the maximum continuous drain current is 70 A. This value is derived from the device's thermal resistance (RθJC = 1.0 °C/W) and maximum junction temperature (175 °C), ensuring safe operation without exceeding thermal limits under steady-state conditions.
Does IRL2505STRL require a gate driver IC for 100 kHz PWM operation?
Yes - driving the 71 nC gate charge at 100 kHz requires ≥7.1 mA average gate current. A dedicated gate driver (e.g., IR2110 or TC4427) is recommended to ensure clean 40 ns turn-on and prevent shoot-through in bridge configurations.
Can IRL2505STRL replace IRL2505PbF in existing designs?
Yes - IRL2505STRL and IRL2505PbF share identical electrical specifications, pinout, and TO-262 package. The "TRL" suffix denotes tape-and-reel packaging; no layout or thermal redesign is needed for drop-in substitution.
Is the body diode in IRL2505STRL suitable for synchronous rectification?
No - while the body diode is fully rated and avalanche-robust, its 110 ns reverse recovery time and 120 nC QRR make it unsuitable for high-efficiency synchronous rectification above 50 kHz; an external Schottky or GaN FET is preferred for that function.
IRL2505STRL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 104A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 10V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 54A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 130 nC @ 5 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5000 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 200W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRL2505STRL FAQ
1.How can I place an order for IRL2505STRL through Aetrix?
Please submit a Request for Quotation (RFQ) for IRL2505STRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRL2505STRL reliable?
The price and inventory of IRL2505STRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL2505STRL is usually 5 days.
3.What payment methods are accepted for IRL2505STRL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL2505STRL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRL2505STRL?
IRL2505STRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRL2505STRL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRL2505STRL?
For technical support, including IRL2505STRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL2505STRL requirements.
6.How does Aetrix verify that IRL2505STRL is sourced from the original manufacturer or authorized distributors?
All IRL2505STRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL2505STRL meets industry standards.
7.What is the process for return or replacement of IRL2505STRL?
All IRL2505STRL units undergo pre-shipment inspection (PSI). If there is an issue with IRL2505STRL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRL2505STRL part is unused and in its original packaging.
Return procedure for IRL2505STRL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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