Infineon Technologies SPP100N06S2L-05

Overview

SPP100N06S2L-05 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in TO-220 package, rated for 55 V V_DS, 4.4 mΩ R_DS(on) at V_GS = 10 V and I_D = 80 A, 100 A continuous drain current, and 175 °C maximum junction temperature. It is avalanche-rated, dv/dt-rated, and optimized for high-efficiency DC-DC converters and motor control in industrial power supplies.

For engineers reviewing the SPP100N06S2L-05 datasheet, SPP100N06S2L-05 pinout, SPP100N06S2L-05 application, or SPP100N06S2L-05 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, single-pulse avalanche energy (810 mJ), thermal resistance (R_thJC = 0.5 K/W), and reverse diode forward voltage (V_SD = 0.9–1.3 V).

Technical Context

This OptiMOS™ device uses trench-gate silicon technology to achieve low on-resistance with logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V). Its 175 °C rated junction temperature and 6 kV/µs dv/dt rating support robust operation in fast-switching, high-current topologies such as synchronous rectification and half-bridge motor drivers.

The MOSFET integrates a monolithic body diode with t_rr = 65–80 ns and Q_rr = 125–160 nC, enabling efficient hard-switched operation without external Schottky supplementation. Thermal design is enabled by its 0.3–0.5 K/W junction-to-case resistance and defined PCB cooling requirements (6 cm² copper area).

Key Specifications

Pinout & Package

Package: PG-TO220-3-1 (standard through-hole TO-220 variant with isolated tab, lead pitch 2.54 mm, JEDEC MS-001AC compliant).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFB4115PBF and STP100N5F6, SPP100N06S2L-05 delivers superior logic-level drivability, higher avalanche energy margin, and tighter R_DS(on) tolerance - making it optimal for space-constrained, high-reliability 48 V industrial systems where gate drive simplicity and transient robustness are critical.

Availability

SPP100N06S2L-05 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, EV onboard chargers, and industrial UPS inverters requiring stable component supply and long-term lifecycle assurance.

Supply support for SPP100N06S2L-05 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™ power transistor product line, engineered specifically for high-current, high-efficiency switching in industrial and computing power conversion systems operating up to 175 °C junction temperature.

FAQ

What is the maximum safe operating temperature for SPP100N06S2L-05?

The absolute maximum junction temperature is 175 °C, and the storage temperature range is –55 °C to +175 °C. Derating begins at T_C > 25 °C per the P_tot vs. T_C curve on page 4 of the datasheet; at T_C = 100 °C, maximum continuous power dissipation drops to ~120 W. Thermal design must ensure R_thJC + R_thCS + R_thSA ≤ (175 – T_A) / P_diss.

Does SPP100N06S2L-05 have a built-in body diode, and what are its characteristics?

Yes, it integrates a monolithic body diode rated for 100 A continuous forward current (I_S) and 400 A pulsed (I_SM). At T_j = 25 °C and I_F = 80 A, V_SD is 0.9–1.3 V; reverse recovery time t_rr is 65–80 ns with Q_rr = 125–160 nC. These values are confirmed in the "Reverse Diode" section on page 3 of the datasheet.

Can SPP100N06S2L-05 be driven directly by a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage V_GS(th) is specified from 1.2 V to 2.0 V, and it achieves R_DS(on) ≤ 5.9 mΩ at V_GS = 4.5 V and I_D = 80 A. While full enhancement occurs at ≥4.5 V, practical switching at moderate frequencies (≤100 kHz) is achievable with 3.3 V drive if gate charge (Q_g = 170–230 nC) and layout inductance are carefully managed.

What is the recommended PCB layout for thermal performance?

Per page 2 footnote 3, optimal thermal performance requires mounting on a vertical FR4 PCB (1.5 mm thick) with a 40 mm × 40 mm copper area (70 µm thick, single layer) connected to the drain tab. This yields R_thJA ≈ 40 K/W. Use multiple thermal vias under the tab and avoid solder mask over the copper pour to maximize heat transfer to internal or external planes.