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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPTG025N10NM5ATMA1

Name: IPTG025N10NM5ATMA1
Brand: Infineon Technologies
SKU: IPTG025N10NM5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPTG025N10NM5ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSMD, Gull Wing

Datasheet:: IPTG025N10NM5ATMA1.pdf

Description:: TRENCH >=100V PG-HSOG-8

Quantity:: RFQ Add To RFQ list

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Inventory:4,794

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Product details

Overview

IPTG025N10NM5 from Infineon Technologies is a 100 V, 2.5 mΩ N-channel enhancement-mode MOSFET in PG-HSOG-8-1 package, optimized for high-frequency synchronous rectification and high-current DC-DC conversion. It delivers 206 A continuous drain current at T_C = 25 °C, features 96 nC total gate charge and 123 nC output charge, and is 100% avalanche tested for ruggedness in industrial power stages.

For engineers reviewing the IPTG025N10NM5 datasheet, IPTG025N10NM5 pinout, IPTG025N10NM5 application, or IPTG025N10NM5 equivalent, key selection criteria include R_DS(on) stability over temperature, Q_g/Q_oss trade-off for ZVS/ZCS operation, thermal resistance (R_thJC = 0.4 °C/W), and HSOG-8 layout compatibility with high-current PCB copper areas.

Technical Context

This OptiMOSTM 5 device uses trench-gate superjunction architecture to achieve ultra-low R_DS(on) × Q_g figure-of-merit (FOM) of 240 Ω·nC. Its gate threshold voltage (2.2–3.8 V) ensures robust noise immunity while enabling standard 10 V gate drive compatibility.

The integrated body diode exhibits fast reverse recovery (t_rr = 40–80 ns, Q_rr = 52–104 nC) and low forward voltage (V_SD = 0.89–1.2 V @ 100 A), making it suitable for synchronous FET roles where diode conduction loss and switching loss must be minimized simultaneously.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 48 V and 60 V bus applications with ≥20 % margin
R_DS(on), max	2.5 mΩ @ V_GS = 10 V, I_D = 150 A - Enables <150 mW conduction loss at 100 A
I_D, cont	206 A @ T_C = 25 °C - Supports high-current phase-legs in server VRMs and telecom PSUs
Q_g	96 nC - Low enough for efficient 500 kHz–1 MHz switching with standard gate drivers
Q_oss	123 nC - Critical for soft-switching performance in LLC and phase-shifted full-bridge topologies
R_thJC	0.4 °C/W - Allows >200 W power dissipation with modest heatsinking at case temperature
V_GS(th)	2.2–3.8 V - Ensures reliable turn-on with 5 V logic-level gate drivers while rejecting noise

Pinout & Package

PG-HSOG-8-1 is a surface-mount, thermally enhanced 8-pin package with exposed drain tab on bottom side. The tab provides low-inductance, high-current path and primary thermal interface to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
TAB (Drain)	Main power drain connection	Exposed copper pad; carries full load current and serves as primary heat sink interface
Pin 1	Gate	High-impedance control input; requires low-inductance routing to minimize ringing during fast switching
Pins 2–8	Source	Parallel-source configuration reduces source inductance and improves current sharing across pins

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g FOM	240 Ω·nC - Directly enables higher efficiency at 1 MHz+ switching frequencies in compact form factors
100 % avalanche rated	E_AS = 250 mJ @ I_D = 150 A - Guarantees single-pulse ruggedness under inductive turn-off stress without derating
Optimized body diode	t_rr = 40–80 ns, Q_rr = 52–104 nC - Reduces diode reverse recovery loss and EMI in synchronous rectifier mode
Thermally enhanced package	R_thJC = 0.4 °C/W - Enables direct thermal coupling to 6 cm² PCB copper, eliminating need for external heatsink in many designs

Applications

Server VRM Phase Legs

Telecom 48 V Intermediate Bus Converters

Use Scenario: High-density, multi-phase buck converters delivering up to 300 A to CPU/GPU cores in AI servers.

IC Role / Device Role / Timing Role: High-side and low-side synchronous FET in 500 kHz–1 MHz multiphase topology.

Use Value: 2.5 mΩ R_DS(on) and 96 nC Q_g reduce both conduction and switching losses, improving full-load efficiency by ≥0.8 % vs. prior-gen MOSFETs.

Use Scenario: Isolated or non-isolated 48 V-to-12 V/5 V DC-DC modules powering base station radios and optical line cards.

IC Role / Device Role / Timing Role: Primary-side switch in hard-switched or resonant (LLC) topologies operating at 300–700 kHz.

Use Value: 100 V rating with 20 % margin supports transient tolerance on 48 V bus; 0.4 °C/W R_thJC sustains 150 A peak current without thermal throttling.

Industrial Motor Drive Inverters

EV On-Board Charger (OBC) PFC Stages

Use Scenario: 3-phase inverter modules for servo drives and HVAC compressors rated up to 5 kW.

IC Role / Device Role / Timing Role: Half-bridge leg switch handling 100–150 A RMS motor current with 10 kHz PWM.

Use Value: Avalanche rating (250 mJ) protects against inductive kickback during fault conditions; parallel-source pins minimize loop inductance for clean gate waveforms.

Use Scenario: Boost PFC stage in 6.6 kW bi-directional OBCs converting AC grid to 400 V DC link.

IC Role / Device Role / Timing Role: Fast-switching boost switch operating at 65–135 kHz with ZVS capability.

Use Value: Low Q_oss (123 nC) and fast body diode enable efficient ZVS transition; halogen-free, RoHS-compliant construction meets automotive qualification requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-frequency MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH210N10T2	R_DS(on) = 2.1 mΩ, Q_g = 115 nC, TO-247 package	Higher gate charge increases driver loss; through-hole mounting limits board density	Preferred when maximum R_DS(on) is critical and thermal mass outweighs switching speed needs
STL220N10F7	R_DS(on) = 2.4 mΩ, Q_g = 85 nC, PowerFLAT 8x8 package	Lower Q_g improves high-frequency efficiency but lacks 100 % avalanche test validation	Better for cost-sensitive, non-safety-critical 1 MHz SMPS where avalanche margin is secondary

Compared with IXFH210N10T2 and STL220N10F7, IPTG025N10NM5 uniquely balances ultra-low R_DS(on), industry-leading Q_oss, full avalanche qualification, and surface-mount thermal performance-making it optimal for space-constrained, high-reliability industrial and telecom power stages.

Availability

IPTG025N10NM5 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.

Supply support for IPTG025N10NM5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOSTM 5 family-engineered specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial systems where thermal density and switching loss dominate design constraints.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C per JEDEC qualification. For continuous industrial operation, derating is required above T_C = 100 °C per Figure 2 in the datasheet; at T_C = 125 °C, the continuous drain current drops to 123 A to maintain safe thermal margin.

Is the PG-HSOG-8-1 package compatible with standard reflow profiles?

Yes-the PG-HSOG-8-1 package is qualified for lead-free reflow per J-STD-020D. Peak temperature must not exceed 260 °C for ≤30 seconds, and the thermal pad must be soldered to ≥6 cm² of 70 µm copper to achieve specified R_thJC and current ratings.

Does the device support gate drive with 5 V logic-level controllers?

Yes-V_GS(th) ranges from 2.2 V to 3.8 V, ensuring reliable turn-on with 5 V gate drivers. However, R_DS(on) is specified at V_GS = 10 V (2.5 mΩ); at V_GS = 5 V, R_DS(on) rises to ~5.5 mΩ, increasing conduction loss significantly.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode achieves V_SD = 0.89 V @ 100 A and t_rr = 40–80 ns-comparable to medium-voltage Schottkys but with lower leakage and no reverse recovery tail. Unlike Schottkys, it shares the same thermal path as the MOSFET channel, simplifying thermal design in synchronous rectifiers.

IPTG025N10NM5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerSMD, Gull Wing

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Ta), 206A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.5mOhm @ 150A 10V

Vgs(th) (Max) @ Id:: 3.8V @ 158µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8800 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOG-8-1

IPTG025N10NM5ATMA1 FAQ

1.How can I place an order for IPTG025N10NM5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPTG025N10NM5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPTG025N10NM5ATMA1 reliable?

The price and inventory of IPTG025N10NM5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPTG025N10NM5ATMA1 is usually 5 days.

3.What payment methods are accepted for IPTG025N10NM5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPTG025N10NM5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPTG025N10NM5ATMA1?

IPTG025N10NM5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPTG025N10NM5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPTG025N10NM5ATMA1?

For technical support, including IPTG025N10NM5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPTG025N10NM5ATMA1 requirements.

6.How does Aetrix verify that IPTG025N10NM5ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPTG025N10NM5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPTG025N10NM5ATMA1 meets industry standards.

7.What is the process for return or replacement of IPTG025N10NM5ATMA1?

All IPTG025N10NM5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPTG025N10NM5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPTG025N10NM5ATMA1 part is unused and in its original packaging.

Return procedure for IPTG025N10NM5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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